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Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS ON , low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side	Original	UT4232 UT4232 UT4232G-S08-R QW-R502-337	PDF
mosfet 337 Abstract: c 337 25 337 diode Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS ON , low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side	Original	UT4232 UT4232 UT4232G-S08-R QW-R502-337 mosfet 337 c 337 25 337 diode	PDF

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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS ON , low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side

Original

UT4232 UT4232 UT4232G-S08-R QW-R502-337

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mosfet 337

Abstract: c 337 25 337 diode
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS ON , low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side

Original

UT4232 UT4232 UT4232G-S08-R QW-R502-337 mosfet 337 c 337 25 337 diode

PDF