US1M MARKING CODE Search Results

Contextual Info: US1A - US1M Green 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features Mechanical Data • • • • • • • • • Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability

US1M spice

Abstract: US1x
Contextual Info: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability

US1M MARKING CODE

Abstract: marking us1m us1m
Contextual Info: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability Ideally Suited for Automated Assembly B

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD US1M Preliminary DIODE SURFACE MOUNT ULTRA FAST RECTIFIER  DESCRIPTION + The UTC US1M is a surface mount ultra fast rectifier, it uses UTC’s advanced technology to provide customers with ultra fast switching, high forward surge current and low reverse leakage, etc.

marking us1m

Abstract: US1A
Contextual Info: US1A - US1M Green 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features Mechanical Data • • • • • • • • • Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability

US1M MARKING CODE

Abstract: J-STD-020D US1A-13-F
Contextual Info: US1A - US1M Green 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency

Contextual Info: US1A thru US1M Taiwan Semiconductor CREAT BY ART FEATURES High Efficient Surface Mount Rectifiers - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - Ultrafast recovery time for high efficiency - Built-in strain relief

US1J

Abstract: US1A
Contextual Info: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss

Contextual Info: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss

US1M MARKING CODE

Abstract: US1M spice marking c y US1D US1J US1A-13 marking us1m
Contextual Info: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss

GENERAL SEMICONDUCTOR MARKING UJ SMA

Abstract: RECTIFIER marking UG 08 us1d US1A
Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • •

US1M SMA

Abstract: J-STD-020D US1A-13-F US1x-13-F US1x
Contextual Info: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Please click here to visit our online spice models database. Features • • • • • • Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak

GENERAL SEMICONDUCTOR MARKING UJ SMA

Abstract: US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08
Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency

GENERAL SEMICONDUCTOR MARKING UJ SMA

Abstract: vishay MARKING UM SMA US1M MARKING CODE us1m vishay JESD22-B102 J-STD-002 us1g vishay RECTIFIER marking UG 08 marking us1j Vishay
Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency

GENERAL SEMICONDUCTOR MARKING UJ SMA

Abstract: vishay MARKING UM SMA Device Marking Code UB UD UG UJ UK UM us1j diode us1m vishay GENERAL SEMICONDUCTOR MARKING UD GENERAL SEMICONDUCTOR us1j marking UD JESD22-B102D J-STD-002B
Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • •

GENERAL SEMICONDUCTOR MARKING uj sma

Abstract: JESD22-B102D J-STD-002B
Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency

marking UD

Abstract: US1M
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT US1A THRU US1M SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES DO-214AC 0.065 1.65 ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

US1M

Contextual Info: US1A thru US1M Surface Mount Ultrafast Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA ge a t l o V d e e d n e Ext Rang Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Mounting Pad Layout 0.066 MIN. (1.68 MIN.) 0.177 (4.50)

Contextual Info: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency

Diode marking ug

Abstract: us1j diode US1M MARKING CODE
Contextual Info: US1A thru US1M Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA ge a t l o V d e e d n e Ext Rang Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Mounting Pad Layout 0.066 MIN. (1.68 MIN.)

Contextual Info: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)

GENERAL SEMICONDUCTOR MARKING UJ SMA

Abstract: GENERAL SEMICONDUCTOR us1j vishay MARKING UM SMA
Contextual Info: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)

Contextual Info: US1A thru US1M Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA ge a t l o V d e e d n e Ext Rang Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Mounting Pad Layout 0.066 MIN. (1.68 MIN.)

Contextual Info: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency