US1M DIODE Search Results

Contextual Info: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2013-10-14 Nominal current – Nennstrom ± 0.2 2.2 ± 0.2 2.1 ± 0.2 5 0.15 Type Typ 4.5

Contextual Info: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2012-10-09 Nominal current – Nennstrom ± 0.2 2.1 2.2 ± 0.2 5 ± 0.2 ± 0.3 Type Typ 4.5

Contextual Info: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2012-06-05 Nominal current – Nennstrom ± 0.2 2.1 2.2 ± 0.2 5 ± 0.2 ± 0.3 Type Typ 4.5

Contextual Info: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2012-08-17 Nominal current – Nennstrom ± 0.2 2.1 2.2 ± 0.2 5 ± 0.2 ± 0.3 Type Typ 4.5

Contextual Info: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Si-Diodes Ultraschnelle Si-Dioden für die Oberflächenmontage Version 2010-03-30 Nominal current – Nennstrom 2.2± 0.2 2.1± 0.1 5± 0.2 0.15 Type Typ 4.6 Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD US1M Preliminary DIODE SURFACE MOUNT ULTRA FAST RECTIFIER  DESCRIPTION + The UTC US1M is a surface mount ultra fast rectifier, it uses UTC’s advanced technology to provide customers with ultra fast switching, high forward surge current and low reverse leakage, etc.

US1M spice

Abstract: US1x
Contextual Info: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability

Contextual Info: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Si-Diodes Ultraschnelle Si-Dioden für die Oberflächenmontage Version 2006-04-18 Nominal current – Nennstrom 2.2± 0.2 2.1± 0.1 5 ± 0.2 0.15 Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2011-02-28 Nominal current – Nennstrom 2.2± 0.2 2.1± 0.1 5± 0.2 0.15 Type Typ 4.5 Repetitive peak reverse voltage

us1j diode

Contextual Info: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Si-Diodes Ultraschnelle Si-Dioden für die Oberflächenmontage Version 2006-04-18 Nominal current – Nennstrom 2.2 2.1 ± 0.2 ± 0.1 5± 0.2 0.15 Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung

us1jm

Abstract: US1G
Contextual Info: US1A . US1M US1A . US1M Ultrafast Switching Surface Mount Silicon Rectifier Diodes Ultraschnelle Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2010-08-12 Nominal current – Nennstrom 2.2± 0.2 2.1± 0.1 5± 0.2 0.15 Type Typ 4.6 Repetitive peak reverse voltage

US1M spice

Contextual Info: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current

Contextual Info: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss

US1J

Abstract: US1A
Contextual Info: SPICE MODELS: US1A US1B US1D US1G US1J US1K US1M US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss

Contextual Info: US1A – US1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss

us1m diode

Abstract: do-214ac footprint marking of US1J diode US1K-T3
Contextual Info: US1A – US1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss

Contextual Info: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time

Contextual Info: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time

SMD HF8

Contextual Info: US1A thru US1M Surface Mount Glass Passivated High Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A FEATURES * Plastic package has Underwriters Laboratories * * * * * * * * Flammability Classification 94V-0 Ideally suited for use in very high frequency switching

Contextual Info: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency

Contextual Info: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency

Contextual Info: New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency

US1B

Contextual Info: Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number US1M product family ULTRA FAST RECOVERY RECTIFIERS package type DO-214AC VRM PRV 1000V Ifsm 30A IF(AV) 1.0A @Vf 1.7V @If 1.0A Trr 100nS IR 10µA @VR 1000V Package Qty Tape : 5K/Reel, 80K/Ctn;

US1M MARKING CODE

Abstract: marking us1m us1m
Contextual Info: US1A - US1M 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER Features • · · · · · Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability Ideally Suited for Automated Assembly B