US M27C256 Search Results

Contextual Info: eeeQ M27C256/E27C256 256K CMOS EPROM November 1989 Pin Configuration Features m 256K 32K x 8 CMOS EPROM DUAL-IN-LINE • Military and Extended Temperature Range 1 28 b vCc A12 L 2 27 b A14 v pp • -55°C to +125°C: M27C2S6 • -4 0 °C to +85°C: E27C256

M27C256

Abstract: M27C256-20 US M27C256 E27C256-30 e27c256 27c256 eprom 27C256 E27C256-20 E27C256-25 m27c256-2
Contextual Info: M27C256/E27C256 256K CMOS EPROM Technology, Incorporated November 1989 Pin Configuration Features • 256K 32K x 8 CMOS EPROM LEADLESS CHIP CARRIER BOTTOM VIEW DUAL-IN-LINE ■ Military and Extended Temperature Range • -55°C to +125°C: M27C2S6 • -40° C to +85° C: E27C256

M27C256-20

Abstract: E27C256-20 BU 6124 FS M27C256a M27C256 E27C256-25
Contextual Info: eeeo M27C256Æ27C256 256K CMOS EPROM November 1989 Pin Configuration Features 256K 32K x 8 CMOS EPROM • Military and Extended Temperature Range • S S ° C to +125° C: M27C256 • -4 0 ° C to +85° C: E27C256 ■ v pp I Au I *13 A. c Programmed Using Intelligent Algorithm

M27C256B

Abstract: IC 25 M27C256B 27C256B
Contextual Info: SCS-THOMSON M27C256B ^7# CMOS 256K 32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100pA - PROGRAMMING VOLTAGE: 12.75V

m27c2568

Abstract: m27c2568-25 1N914 M27C256B PDIP28 A13D BA431
Contextual Info: SGS-THOMSON M27C256B HDfgœaLKgTTSQROQ 256K 32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10O^A

m27c2568

Abstract: SGS M27C256B M27C256B M27C2568-15 PDIP28 PLCC32
Contextual Info: r Z J SGS-THOMSON ^7 # M27C256B R iflD 0 ® IIL ll© in S ® E !lD g i CMOS 256K (32K x 8 UV EPROM and OTP ROM • VERY FAST ACC ESS TIM E: 80ns ■ CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZER O W AIT STATE ■ LOW POWER “C M O S” CONSUMPTIO N:

SGS M27C256B

Abstract: ST M27C256B NM27C256B
Contextual Info: [ Z J SCS-THOMSON M27C256B CMOS 256K 32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 30 mA - Standby Current 100 nA ■ PROGRAMMING VOLTAGE: 12.75V

Contextual Info: SGS-THOMSON Q g^(ô g[L[l TO(Q)iQ©S M27C256B 256K (32K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA

Contextual Info: ¿ = 7 S G S -T H O M S O N *-7# llD»i[Li gTO®Ki(g§ M27C256B 256K (32K x 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|iA ■ PROGRAMMING VOLTAGE: 12.75V ■ ELECTRONIC SIGNATURE for AUTOMATED

FZJ 141

Abstract: m27c2568 IC 25 M27C256B SGS M27C256B M27C256B PDIP28
Contextual Info: £ jJ S G S -T H O M S O N 0 §»ilLiM KI(gS M27C256B CMOS 256K (32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100(iA

m27c2568

Abstract: M27C256B M27C256 1N914 PDIP28 72c5237
Contextual Info: r r z ^ 7 # S G S -T H O M S O N . M27C256B O f fl[l § [M B I[L i( ^ [ls M ( ê § 256K (32K x 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|iA ■ PROGRAMMING VOLTAGE: 12.75V

M27C512 SGS-THOMSON

Abstract: E5 marking M27C256B M27C512 M27V512 M27C512 marking QR101
Contextual Info: QUALIFICATION REPORT 256K & 512K bit CMOS-E5 OTP ROM in TSOP28 INTRODUCTION The concerned products to this Qualification Report are: M27C256B-XXNY, M27C512-XXNY, M27V512-XXNY where "XX" is for access time class and "Y" for temperature range. The M27C256B is a 256K bit OTP ROM, organized as 32K x 8 bits. The M27C512 and the

Contextual Info: P ffiB O M O N A O R f M27C256 256K 32K x 8 CHMOS UV ERASABLE PROM Military m Fast Access Times: M27C256-90 M27C256-12 M27C256-15 M27C256-17 M27C256-20 M27C256-25 • Fast Programming — inteligent Programming Algorithm — Quick-Pulse Programming™

m27c256

Abstract: seeq 27c256 M27C256-20
Contextual Info: M27C256/E27C256 256K CMOS EPROM Technology, Incorporated November 1989 Pin Configuration Features • 256K 32K x 8 CMOS EPROM LEADLESS CHIP CARRIER BOTTOM VIEW DUAL-IN-LINE ■ Military and Extended Temperature Range • -5 5 °C to +125°C: M27C256 • -40°C to +85°C: E27C256

M27C256B-10F1

Abstract: M27C256B M27C256B-15XF1 M27C256B-20XF1 M27C256B-15B1 M27C256B-15F6
Contextual Info: SGS-THOMSON iU C T tR M O O S M 2 7 C 2 5 6 B 256K 32K x 8 CMOS UV EPROM - OTPROM • VERY FAST ACCESS TIME : 100 ns. ■ COMPATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : _ Operating current 30 mA _ Stand by current 200 |j.A

Contextual Info: E i. SGS-THOMSON M T IH M O O S M 27C 256B 256K 32K x 8 CMOS UV EPROM - OTPROM • VERY FAST ACCESS TIME : 100 ns. ■ COM PATIBLE TO HIGH SPEED MICROPRO­ CESSORS ZERO W AIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : _ Operating current 30 mA _ Stand by current 200 n.A

Contextual Info: /T T SGS'THOMSON ^ 7 # G fflD IIM ilL IO T M O IS i M 2 7 V 256 LOW VOLTAGE 256K 32K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA

Contextual Info: £ jJ S G S -T H O M S O N 0 » IIL IM W 1 § § M 27C 256B CMOS 256K (32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA

Contextual Info: M 2 7 C 2 5 6 /E 2 7C 2 5 6 256 K CMOS EPROM March 1987 Features Description • 2 5 6 K 32K x S C M O S EPROM SEEQ's27C256 is the industry’s firs t 256KCMOS EPROM. lth a s a 3 2 K x 8 organization and has very low pow er dissipation. Its active current is less

Fairchild part numbering

Abstract: m27c512 equivalent package TSOP20 M27C512 tsop20 401 PDIP40 AM27X64 TSOP44 MX27C1100 AT27LV520
Contextual Info: OTP and UV EPROM products STMicroelectronics - January 2004 - Printed in Italy - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies. All other names are the property of their respective owners.

ST m27c512

Abstract: TSOP44 Package SO32 m27c1001 plcc32 ST M27C256B Atmel 642 M27C4002 m27c4001 CROSS REFERENCE PLCC32 package EPROM m27c2001
Contextual Info: OTP and UV EPROM Products www.st.com/eprom Cross Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Introduction Long-term commitment STMicroelectronics will support the EPROM market in the long term with a strong commitment, guaranteeing manufacturing capability and high quality service. Continuous

TSOP-20

Abstract: package TSOP20 tsop20 M27C4001 8X14 PDIP32 MX27C512 ST M27C256B TSOP32 M27C512
Contextual Info: OTP and UV EPROM products Cross-reference guide January 2006 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

ST M27C256B

Contextual Info: 5gE 5 1 . D • 7^gqg37 0 0 3 7 5Mfl S C S -T H O M S O N OflM ■ S 6 T H s 6 T~^é~ 3~2^t s - thomon I I L i O T ® » M 2 7 C 2 5 6 B CMOS 256K (32K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE

5962-8606302XX

Abstract: MD27C256-25 bxa30 AM27256-170 5962-86063 08 ZX 5962-8606305X DM27C256-200 5962-8606303XX 5962-8606301XX
Contextual Info: E ! AMD DEFENSE LOGISTICS AGENCY DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OH 45444-5254 D E S C -E C S M r . G r o s s /( A V 9 8 6 5 13 - 2 9 6 - 6 0 2 1 / n j j ) S U B JE C T : N o tic e o f R e v is io n (N O R ) 5 9 6 2 - R 1 3 0 - 9 2 f o r S ta n d a r d iz e d