UPS SINUS CIRCUIT Search Results
UPS SINUS CIRCUIT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR | |||
| D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs | |||
| SCC433T-K03-004 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor | |||
| MRMS791B | Murata Manufacturing Co Ltd | Magnetic Sensor | |||
| SCC433T-K03-05 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
UPS SINUS CIRCUIT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SEMIX353GB126Contextual Info: SEMiX353GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 364 A Tc = 80°C 256 A 450 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 329 A Tc = 80°C 228 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules |
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SEMiX353GB126HDs B100/125 R100exp B100/125 1/T-1/T100) SEMIX353GB126 | |
SEMIX503GD126H
Abstract: 80C284
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SEMiX503GD126HDc B100/125 R100exp B100/125 1/T-1/T100) SEMIX503GD126H 80C284 | |
SEMIX703GD126HDCContextual Info: SEMiX703GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 642 A Tc = 80°C 449 A 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 561 A Tc = 80°C 384 A ICRM = 2xICnom VGES SEMiX 33c Trench IGBT Modules |
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SEMiX703GD126HDc B100/125 R100exp B100/125 1/T-1/T100) SEMIX703GD126HDC | |
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Contextual Info: SEMiX71GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 115 A Tc = 80°C 88 A 225 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 97 A Tc = 80°C 73 A 225 A -40 . 175 °C ICRM = 3xICnom VGES |
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SEMiX71GD12T4s | |
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Contextual Info: SEMiX101GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 160 A Tc = 80°C 123 A 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 121 A Tc = 80°C 91 A 300 A -40 . 175 °C ICRM = 3xICnom VGES |
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SEMiX101GD12T4s | |
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Contextual Info: SEMiX 303GD12T4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 466 A Tc = 80°C 359 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 338 A Tc = 80°C 252 A 900 A -40 . 175 °C ICRM = 3xICnom |
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303GD12T4c | |
semikron IGBT 150A 600vContextual Info: SEMiX152GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 229 A Tc = 80°C 177 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 195 A Tc = 80°C 146 A 450 A -40 . 175 °C ICRM = 3xICnom VGES |
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SEMiX152GB12T4s SEMiX152GB12T4s E63532 semikron IGBT 150A 600v | |
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Contextual Info: SEMiX404GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 618 A Tc = 80°C 475 A 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 440 A Tc = 80°C 329 A 1200 A -40 . 175 °C ICRM = 3xICnom |
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SEMiX404GB12T4s | |
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Contextual Info: SEMiX151GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C ICRM = 3xICnom VGES |
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SEMiX151GD12T4s | |
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Contextual Info: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C ICRM = 3xICnom VGES |
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SEMiX151GB12T4s | |
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Contextual Info: SKM50GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 79 A Tc = 80 °C 60 A 50 A ICnom ICRM SEMITRANS 2 ICRM = 3xICnom 150 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 65 A Tc = 80 °C 49 A 50 |
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SKM50GB12V | |
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Contextual Info: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 450 A -40 . 175 °C ICRM = 3xICnom |
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SEMiX151GB12T4s E63532 | |
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Contextual Info: SEMiX603GB12E4p Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 1110 A Tc = 80 °C 853 A 600 A ICnom ICRM SEMiX 3p Trench IGBT Modules SEMiX603GB12E4p VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX603GB12E4p | |
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Contextual Info: SEMiX 303GD12T4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 338 A Tc = 80 °C 252 A 900 A -40 . 175 °C ICRM = 3xICnom |
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303GD12T4c E63532 | |
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Contextual Info: SEMiX604GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 916 A Tc = 80°C 704 A 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 707 A Tc = 80°C 529 A 1800 A -40 . 175 °C ICRM = 3xICnom |
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SEMiX604GB12T4s | |
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Contextual Info: SEMiX453GD12T4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 683 A Tc = 80°C 526 A 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 544 A Tc = 80°C 407 A 1350 A -40 . 175 °C ICRM = 3xICnom |
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SEMiX453GD12T4c | |
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Contextual Info: SEMiX202GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX202GB12T4s E63532 B100/125 R100exp B100/125 1/T-1/T100) | |
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Contextual Info: SKM300GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A |
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SKM300GA12E4 CAL009 | |
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Contextual Info: SEMiX703GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C |
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SEMiX703GD126HDc E63532 | |
SKM50GB063Contextual Info: SKM50GB063D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 600 V Tc = 25 °C 70 A Tc = 75 °C 51 A 50 A ICnom ICRM SEMITRANS 2 Superfast NPT-IGBT Modules ICRM = 2xICnom 100 A -20 . 20 V 10 µs -55 . 150 °C |
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SKM50GB063D SKM50GB063 | |
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Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C |
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SEMiX703GB126HDs E63532 | |
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Contextual Info: SEMiX252GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C |
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SEMiX252GB126HDs E63532 | |
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Contextual Info: SKM300GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 |
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SKM300GB12T4 | |
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Contextual Info: SEMiX353GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 364 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 450 A -20 . 20 V 10 µs -40 . 150 °C |
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SEMiX353GB126HDs E63532 | |