SEMIX151GB12T4S Search Results
SEMIX151GB12T4S Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SEMIX151GB12T4S |
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Trench IGBT Modules | Original | 471.09KB | 5 |
SEMIX151GB12T4S Price and Stock
SEMIKRON SEMIX151GB12T4SSEMIX 4 1S TRENCH IGBT MODULE Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel |
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SEMIX151GB12T4S | 2 |
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SEMIX151GB12T4S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C ICRM = 3xICnom VGES |
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SEMiX151GB12T4s | |
TF42
Abstract: semix151gb
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SEMiX151GB12T4s E63532 TF42 semix151gb | |
Contextual Info: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 450 A -40 . 175 °C ICRM = 3xICnom |
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SEMiX151GB12T4s E63532 | |
SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
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SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |