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    SEMIX151GB Search Results

    SEMIX151GB Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SEMIX151GB12T4S
    Semikron Trench IGBT Modules Original PDF 471.09KB 5
    SF Impression Pixel

    SEMIX151GB Price and Stock

    SEMIKRON

    SEMIKRON SEMIX151GB12VS

    Igbt, Module, 1.2Kv, 231A; Continuous Collector Current:231A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX151GB12VS
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    Newark SEMIX151GB12VS Bulk 8
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    RS SEMIX151GB12VS Bulk 1
    • 1 $379.06
    • 10 $348.73
    • 100 $348.73
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    SEMIKRON SEMIX151GB12E4S

    Igbt Module, Dual, 1.2Kv, 232A; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX151GB12E4S
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    ComSIT USA SEMIX151GB12E4S 37
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    SEMIKRON SEMIX151GB17E4S

    Semix151Gb17E4S |Semikron SEMIX151GB17E4S
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    RS SEMIX151GB17E4S Bulk 1
    • 1 $397.52
    • 10 $357.77
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    SEMIKRON SEMIX151GB12E4S 27890100

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
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    TME SEMIX151GB12E4S 27890100 1
    • 1 $278.63
    • 10 $205.18
    • 100 $190.03
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    SEMIKRON SEMIX151GB12VS 27890101

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
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    TME SEMIX151GB12VS 27890101 1
    • 1 $320.60
    • 10 $236.66
    • 100 $219.17
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    SEMIX151GB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C ICRM = 3xICnom VGES


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    SEMiX151GB12T4s PDF

    Contextual Info: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


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    SEMiX151GB12E4s E63532 PDF

    Contextual Info: SEMiX151GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMiX 1s ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C


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    SEMiX151GB12Vs E63532 PDF

    SEMiX151GB12E4s

    Contextual Info: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original
    SEMiX151GB12E4s E63532 SEMiX151GB12E4s PDF

    Contextual Info: SEMiX151GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMiX 1s VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V 450 A -20 . 20


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    SEMiX151GB12Vs SEMiX151GB12Vs E63532 PDF

    Contextual Info: SEMiX151GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMiX 1s VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V 450 A -20 . 20


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    SEMiX151GB12Vs SEMiX151GB12Vs E63532 PDF

    TF42

    Abstract: semix151gb
    Contextual Info: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s tpsc Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original
    SEMiX151GB12T4s E63532 TF42 semix151gb PDF

    Contextual Info: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original
    SEMiX151GB12E4s E63532 AppliMiX151GB12E4s PDF

    Contextual Info: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 450 A -40 . 175 °C ICRM = 3xICnom


    Original
    SEMiX151GB12T4s E63532 PDF

    Contextual Info: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


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    SEMiX151GB12E4s SEMiX151GB12E4s E63532 PDF

    SEMIX151GB12E4S

    Contextual Info: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C


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    SEMiX151GB12E4s E63532 SEMIX151GB12E4S PDF

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Contextual Info: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


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    SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 PDF