UPS ES 700 Search Results

Contextual Info: Si GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4336-5.8 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. 'cco nt 1200A

tl-130 transformer

Abstract: abb 1000 kVA transformer 1.5 kva inverter circuit diagram Distribution transformer abb ABB Group abb 1000 kVA oil transformer abb oil transformer ABB Air Circuit breaker abb inverter
Contextual Info: Solar inverters ABB turnkey stations ULTRA-MVC-S 770 to 3110 kW Turnkey solutions comprising an ULTRA series inverter and a Medium Voltage Compartment MVC-S . The new ULTRA-MVC-S has been specifically developed for large installations made with ULTRA series

Contextual Info: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Units 600 600 2 3 0 /1 9 5 460 / 390 ±20 700 -4 0 . +150 125) 2 500 Class F 40/125/56 Rge = 20 k£^ Toase = 25/60 "C Tease = 25/60 °C; tp = 1 ms Ptot Tj, (Tstg)

Contextual Info: s e MIKROn Absolute Maximum Ratings Values Symbol Conditions 1 Units VcES VcGR lc IcM V ges = 20 Toase = 25/85 °C Tease = 25/85 °C; tp = 1 ms P to t per R 1200 1200 1 5 0 /1 0 0 300 / 200 ± 20 700 -4 0 . + 150 125) 2 500 Class F 40/125/56 g e I G B T , T o as e

HIGH POWER DIODE

Abstract: "Power Diode" 500V 20A 132 1506 diode D66DWT273 D66EW1 EW NPN D66DW3 NPN POWER DARLINGTON TRANSISTORS EW1 transistor
Contextual Info: HIGH VOLTAGE D 66D W T2T3 D66EW1,2,3 NPN POWER DARLINGTON VcER = 600-700 VOLTS VcEV = 800-900 VOLTS 50 AMP, 167 WATTS TRANSISTORS The D66DW/EW is a high voltage NPN high current power Darlington especially designed for applications requiring high blocking voltage capability such as: 460VAC line motor

DS4137

Contextual Info: GP400LSS12S 0IT I M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBT Module DS4137 - 7.4 Decem ber 1998 S upersedes July 1998 version, DS4137 - 7.3 The GP400LSS12S is a single switch 1200 volt, robust n channel enhancem ent mode insulated gate bipolar

D66DS

Abstract: D66DS5 D66ES D66ES5
Contextual Info: HIGH POWER D66DS5,6,7 D66ES5.6.7 NPN POWER DARLINGTON TRANSISTORS 500-700 VOLTS 20 AMP, 62.5 WATTS The General Electric D66DS/D66ES are high current power darlingtons. They feature collector isolation from the heat sink, an internal construction designed for stress-free opera­

ge traction motor

Contextual Info: GP250MHB06S M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBT Module DS4325 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4325 - 4.3 The GP250MHB06S is a dual switch 600V robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

ge traction motor

Contextual Info: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module

Contextual Info: TF666.A M ITEL Fast Switching Thyristor SEMICONDUCTOR Supersedes January 1996 version, DS4274 - 2.1 DS4274 - 2.2 KEY PARAMETERS 1400V DRM 700A T RMS 9000A TSM dV/dt 300V/(is dl/dt 500A/|is t. 20|is APPLICATIONS • High Power Inverters And Choppers. ■

Contextual Info: @ M ITEL GP350MHB06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes August 1998 version, DS4923-3.0 DS4923 -3.1 D ecem ber 1998 The GP350MHB06S is a dual switch 600V robust n channel enhancem ent m ode Insulated G ate Bipolar Transistor IGBT module. Designed for low power loss

CM300DY-12E

Abstract: CM300DY-12 K071 BP107
Contextual Info: bME D • 72^21 Q00b752 m 41D « P R X CM300DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43)41.14.14 powerex inc Dual IGBTMOD _ . . . , ,

4453 smd

Abstract: to247 f tab 4453
Contextual Info: v Low c E s 3 t IGBT ^ High Speed IGBT 1000 V 24 A IXGH 12 N10O IXGH12N100A 1000 V 24 A . Symbol Test Conditions V * CES T, = 25°C to 150°C 1000 V V C6R ^ = 25°C to 150°C; RGE = 1 Mfi 1000 V v GES Continuous ±20 V vt g e m Transient ±30 V ^C25 T c = 25°C

38N60

Contextual Info: Ultra-Low VCE sat IGBT IXGH 38N60 Symbol Test Conditions VCES ^ VCGR Tj = 25°C to 150°C; RGE= 1 M fi Maximum Ratings = 25°C to 150°C 600 V 600 V v GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A ^CM Tc = 25°C, 1 ms

RG132

Abstract: diode bridge 35 Ampere 1000V LC 7521 diode bridge 60 Ampere 1000V
Contextual Info: POùJEREX INC m m t n 3RE s x D • ?ST4b21 _ Ponerex, Inc., Mills Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 GÜDMflDT 3 WÊPRX ID221K10 m Dual IGBTMOD

Contextual Info: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­ tion with a reverse-connected su­ per-fast recovery free-wheel diode.

Contextual Info: nixY S IGBT Modules VII 125-12S4 Half-Bridge and Chopper Configurations VID125-12S4 IC D C VC E S VD I125-12S4 V C E (sat) = 3.7 V High Short Circuit SOA Capability Sym bo l VII VID T e s t C o n d itio n s M axim um R atin g s T j = 25 °C to 150°C 1200

IXSN35N120

Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings

ph 33j

Contextual Info: POUIEREX I NC m U D B tE K • TS^maSl ODGMflOl T BPRX _ ID 2 S 1 2 7 B Powerex, Inc., H lllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14

Contextual Info: s e M IK R O n Absolute Maximum Ratings Symbol Conditions Values Units 1 1200 1200 2 90 / 200 V V A 5 80 / 400 ±20 1350 - 4 0 . + 150 125) 2500 Class F 4 0 /12 5 /5 6 A V W °C V 1 9 5 /1 3 0 5 80 / 400 1450 10 500 A A A A2s V cE S lc R Ge = 20 T oase = 25 /85 °C

Contextual Info: □ IXYS IGBT Modules VII 200-12S4 Half-Bridge and Chopper Configurations VID 200-12S4 VII High Short Circuit SOA Capability VID I I I Sym bo l T e s t C o n d itio n s V CES T j = 25 °C to 150°C V CGR Tj = V D I200-12S4 itSl M axim um R atin g s 25°C to 150°C ; RGE = 1 MQ

ITH13F06P

Abstract: NC405C
Contextual Info: MITEL ITH13F06 High Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supsedes O ctober 1999, version DS4989-2.3 DS4989-3.0 May 1999 Key Parameters T h e IT H 1 3 F 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r

Contextual Info: r = 7 S G S -T H O M S O N ^ 7 #« L6380 L 6381 HIGH VOLTAGE HIGH-SIDE DRIVER V h .v . UP TO 600 V • SUPPLYVOLTAGEUPTO 17 V ■ DRIVER CURRENT CAPABILITY: SINK CURRENT = 200 mA SOURCE CURRENT =100 mA ■ UNDER VOLTAGE LOCKOUT WITH HYS­ TERESIS ■ CMOS/LSTTL COMPATIBLE INVERTING IN­

Contextual Info: □IXYS IXSH/IXSM 35N100A High speed IGBT VC ES I C 25 V C E sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Sym bol T est C onditions v CES T j = 25°C to 150°C 1000 V V CGR T0 = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES C ontinuous +20 V V GEM