UPS ES 700 Search Results

Contextual Info: Si GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4336-5.8 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. 'cco nt 1200A

Contextual Info: S i GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4335-5.5 GP600DHB16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V CE,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ^ C O N T ■ UPS. 6 0 0 A

tl-130 transformer

Abstract: abb 1000 kVA transformer 1.5 kva inverter circuit diagram Distribution transformer abb ABB Group abb 1000 kVA oil transformer abb oil transformer ABB Air Circuit breaker abb inverter
Contextual Info: Solar inverters ABB turnkey stations ULTRA-MVC-S 770 to 3110 kW Turnkey solutions comprising an ULTRA series inverter and a Medium Voltage Compartment MVC-S . The new ULTRA-MVC-S has been specifically developed for large installations made with ULTRA series

Contextual Info: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Units 600 600 2 3 0 /1 9 5 460 / 390 ±20 700 -4 0 . +150 125) 2 500 Class F 40/125/56 Rge = 20 k£^ Toase = 25/60 "C Tease = 25/60 °C; tp = 1 ms Ptot Tj, (Tstg)

Contextual Info: 72 94 62 1 POWEREX INC Tñ De | 72T4b21 D0D51S7 T D 7~-33 -3s~ m um nex D66DS D66ES Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Fast Switching Single Darlington Transistor Module 20 Amperes 500-600-700 Volts Description O U TLIN E DRAWING

Contextual Info: s e MIKROn Absolute Maximum Ratings Values Symbol Conditions 1 Units VcES VcGR lc IcM V ges = 20 Toase = 25/85 °C Tease = 25/85 °C; tp = 1 ms P to t per R 1200 1200 1 5 0 /1 0 0 300 / 200 ± 20 700 -4 0 . + 150 125) 2 500 Class F 40/125/56 g e I G B T , T o as e

HIGH POWER DIODE

Abstract: "Power Diode" 500V 20A 132 1506 diode D66DWT273 D66EW1 EW NPN D66DW3 NPN POWER DARLINGTON TRANSISTORS EW1 transistor
Contextual Info: HIGH VOLTAGE D 66D W T2T3 D66EW1,2,3 NPN POWER DARLINGTON VcER = 600-700 VOLTS VcEV = 800-900 VOLTS 50 AMP, 167 WATTS TRANSISTORS The D66DW/EW is a high voltage NPN high current power Darlington especially designed for applications requiring high blocking voltage capability such as: 460VAC line motor

1S697

Abstract: D66DS D66DS7 D66ES D66ES7 OA 161 diode
Contextual Info: 7294621 POWEREX INC Tfi K M B ia DE I 7ETMti51 00D51S7 T f ' D ~ ^ 7“'^ 3 - 3 s ~ D66DS D66ES Powerex, In c., H lllis S tre e t, Youngwood, P ennsylvania 15697 412 925-7272 Fast Switching Single Darlington Transistor Module 20 Amperes 500-600-700 Volts

UPS es 550

Abstract: SKM300GB123D
Contextual Info: SKM 300GB123D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT Conditions Values 1200 V Tcase = 2 5 ” C 300 A Tease = 80 °C 220 A 400 A ±20 V 10 MS °C 260 A = 80 °C 180 A 400 A = 150 °C 2200 A Tcase = 25 °C 350 A 230 A 600

DS4137

Contextual Info: GP400LSS12S 0IT I M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBT Module DS4137 - 7.4 Decem ber 1998 S upersedes July 1998 version, DS4137 - 7.3 The GP400LSS12S is a single switch 1200 volt, robust n channel enhancem ent mode insulated gate bipolar

D66DS

Abstract: D66DS5 D66ES D66ES5
Contextual Info: HIGH POWER D66DS5,6,7 D66ES5.6.7 NPN POWER DARLINGTON TRANSISTORS 500-700 VOLTS 20 AMP, 62.5 WATTS The General Electric D66DS/D66ES are high current power darlingtons. They feature collector isolation from the heat sink, an internal construction designed for stress-free opera­

ge traction motor

Contextual Info: GP250MHB06S M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBT Module DS4325 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4325 - 4.3 The GP250MHB06S is a dual switch 600V robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

SMD Transistor g16

Abstract: smd diode JC 9E T0252 DS4988-2 High-Speed-Powerline ITH08F06 ITH08F06B ITH08F06G smd diode UJ 64 A
Contextual Info: M ITEL ITH08F06 - _ High Speed Powerline N-Channel IGBT S E M IC O N D U C T O R . . . , A dvance Inform ation DS4988-2.3 O ctober 1998 T h e IT H 0 8 F 0 6 is a v e ry ro b u s t n -c h a n n e l,

ge traction motor

Contextual Info: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module

Contextual Info: @ M ITEL GP350MHB06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes August 1998 version, DS4923-3.0 DS4923 -3.1 D ecem ber 1998 The GP350MHB06S is a dual switch 600V robust n channel enhancem ent m ode Insulated G ate Bipolar Transistor IGBT module. Designed for low power loss

CM300DY-12E

Abstract: CM300DY-12 K071 BP107
Contextual Info: bME D • 72^21 Q00b752 m 41D « P R X CM300DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43)41.14.14 powerex inc Dual IGBTMOD _ . . . , ,

mitel 7050

Abstract: T0247 DS4992 High speed switching Transistor
Contextual Info: ITH60F06 M ITEL High Speed Powerline N-Channel IGBT SEMICONDUCTOR _ Advance Inform ation DS4992-2.2 O ctober 1998 Th e IT H 6 0 F 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range

4453 smd

Abstract: to247 f tab 4453
Contextual Info: v Low c E s 3 t IGBT ^ High Speed IGBT 1000 V 24 A IXGH 12 N10O IXGH12N100A 1000 V 24 A . Symbol Test Conditions V * CES T, = 25°C to 150°C 1000 V V C6R ^ = 25°C to 150°C; RGE = 1 Mfi 1000 V v GES Continuous ±20 V vt g e m Transient ±30 V ^C25 T c = 25°C

38N60

Contextual Info: Ultra-Low VCE sat IGBT IXGH 38N60 Symbol Test Conditions VCES ^ VCGR Tj = 25°C to 150°C; RGE= 1 M fi Maximum Ratings = 25°C to 150°C 600 V 600 V v GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A ^CM Tc = 25°C, 1 ms

ITH40F06P

Abstract: T0247 ups 3000 service BT 156 transistor ITH40F06
Contextual Info: ITH40F06 M ITEL High Speed Powerline N-Channel IGBT S E M IC O N D U C T O R A dvance Inform ation DS4991-2.2 O ctober 1998 T h e IT H 4 0 F 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range

ITH23F06P

Abstract: T0247 PWM welding ITH23F06 cn/BT 156 transistor
Contextual Info: @ M ITEL ITH23F06 - High Speed Powerline N-Channel IGBT S E M IC O N D U C T O R . . . , dvance Inform ation DS4990-2.2 O ctober 1998 T h e IT H 2 3 F 0 6 is a v e ry ro b u s t n -c h a n n e l,

Contextual Info: □IXYS VII 100- 12S3 iC DC =100 A VID 100- 12S3 v CES = 1200 v VDI100- 12S3 v CE(sat) = 3.7 V IGBT M odules Half-Bridge and Chopper Configurations High Short Circuit SOA Capability VII VID VDI r - 1 9 0— 1 - 15 S ym bo l T est C o n d itio n s

GaN 20A

Contextual Info: D64DV5,6,7 D64EV5,6,7 File Number 2361 50-Ampere N-P-N Darlington Power T ransistors TERMINAL DESIGNATIONS c FLANGE Features: • High speed t$ < 5.0 /jsec., tr < 3.0 Aisec. ■ High voltage: 400-500 Vq ^q POWER TRANSISTORS ■ High gain: 50 minimum @ 50 amperes, I q

1-20Q

Abstract: AD 483 D 819
Contextual Info: □IXYS V CES Low VCE sat IGBT High Speed IGBT IXGH 12 N100 IXGH 12N100A Maximum Ratings Sym bol Test C onditions V CES Td = 25°C to 150°C 1000 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 1000 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C