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UPF21060 Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UPF21060		Cree	60W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET	Original	PDF	102.13KB	6

UPF21060 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
diode C531 Abstract: c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217 Contextual Info: UPF21060 60W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 60W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier	Original	UPF21060 MRF21060 diode C531 c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217	PDF

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diode C531

Abstract: c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217
Contextual Info: UPF21060 60W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 60W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier

Original

UPF21060 MRF21060 diode C531 c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217

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