UPC2758T Search Results

UPC2758TBE3

Contextual Info: 3 V, SUPER MINIMOLD SI MMIC DOWNCONVERTER FEATURES UPC2757TB UPC2758TB CONVERSION GAIN vs. LO FREQUENCY 25 • HIGH-DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package VCC = 3 V, LO Power = -5 dBm RF Above LO 200 MHz IF Conversion Gain dB • WIDEBAND OPERATION:

Contextual Info: 3 V, SUPER MINIMOLD SI MMIC DOWNCONVERTER FEATURES UPC2757TB UPC2758TB CONVERSION GAIN vs. LO FREQUENCY 25 • HIGH-DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package VCC = 3 V, LO Power = -5 dBm RF Above LO 200 MHz IF Conversion Gain dB • WIDEBAND OPERATION:

Contextual Info: PRELIMINARY DATA SHEET_ IV IF f * / BIPOLAR ANALOG INTEGRATED CIRCUITS / UPC2757TB, UPC2758TB SILICON MMIC 1st FREQUENCY DOWNCONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ^¡PC2757TB and ^¡PC2758TB are silicon monolithic integrated circuit designed as

UPC2757T

Abstract: UPC2757TB UPC2757TB-E3-A UPC2758TB UPC2758TB-E3-A
Contextual Info: 3 V, SUPER MINIMOLD SI MMIC DOWNCONVERTER FEATURES UPC2757TB UPC2758TB CONVERSION GAIN vs. LO FREQUENCY 25 • HIGH-DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package VCC = 3 V, LO Power = -5 dBm RF Above LO 200 MHz IF Conversion Gain dB • WIDEBAND OPERATION:

MPC2758T

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2757T, UPC2758T 3V-BIAS L-BAND SILICON DOWNCONVERTER ICs FOR MOBILE COMMUNICATIONS DESCRIPTION /¿PC2757T and /¿PC2758T are silicon m onolithic integrated circuits designed as 1st down converters for L band

UPC2757T

Abstract: UPC2758T UPC2758T-E3 UPC2757T-E3
Contextual Info: 3 V, SILICON MMIC FREQUENCY CONVERTER FEATURES UPC2757T UPC2758T CONVERSION GAIN vs. LO FREQUENCY VCC = 3 V, LO Power = -5 dBm RF Above LO • WIDE BAND OPERATION UP TO 2.5 GHz 25 • LOW VOLTAGE OPERATION: 2.7 V Minimum • LOW POWER CONSUMPTION: 15 mW UPC2757T

MPC2757TB

Abstract: MPC2758TB pc2757tb PC2758TB MARKING c1y UPC2758TB marking 6pin PS
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS SILICON MMIC 1st FREQUENCY DOWNCONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ¿iPC2757TB and ,uPC2758TB are silicon monolithic integrated circuit designed as 1st frequency downconverter for cellular/cordless telephone receiver stage. The ICs consist of mixer and local amplifier. The

UPC2757T

Abstract: UPC2757T-E3 UPC2758T UPC2758T-E3
Contextual Info: 3 V, SILICON MMIC FREQUENCY CONVERTER FEATURES UPC2757T UPC2758T CONVERSION GAIN vs. LO FREQUENCY VCC = 3 V, LO Power = -5 dBm RF Above LO • WIDE BAND OPERATION UP TO 2.5 GHz • LOW VOLTAGE OPERATION: 2.7 V Minimum 25 • LOW POWER CONSUMPTION: 15 mW UPC2757T

J442

Abstract: UPC2757T UPC2757T-E3 UPC2758T UPC2758T-E3
Contextual Info: 3 V, SILICON MMIC FREQUENCY CONVERTER FEATURES UPC2757T UPC2758T CONVERSION GAIN vs. LO FREQUENCY VCC = 3 V, LO Power = -5 dBm RF Above LO • WIDE BAND OPERATION UP TO 2.5 GHz 25 • LOW VOLTAGE OPERATION: 2.7 V Minimum • LOW POWER CONSUMPTION: 15 mW UPC2757T

MMIC WIDE-BAND AMPLIFIER sot-363

Abstract: uPC2757TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2757TB / UPC2758TB 3 V, SUPER MINIMOLD SI MMIC DOWNCONVERTER FEATURES CONVERSION GAIN vs. LO FREQUENCY 25 • HIGH-DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package Conversion Gain dB • WIDEBAND OPERATION:

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

CAPACITOR

Contextual Info: PRELIM IN A R Y DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT u P C 8 1 1 2 T B SILICON MMIC 1st FREQUENCY DOWNCONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ^¡PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency downconverter for

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC8112T SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ^¡PC8112T is a silicon monolithic integrated circuit designed as cellular/cordless telephone receiver stage. 1st frequency down-converter for

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

PC2758TB

Abstract: PC8112TB-E3-A
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8112TB SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The PC8112TB features

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17