UPC2749T Search Results

Contextual Info: 3 V, SUPER MINIMOLD UPC2749TB 1900 MHz SI RFIC AMPLIFIER FEATURES GAIN vs. FREQUENCY AND TEMPERATURE • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package 25 VCC = 3.0 V • GAIN: 16 dB TYP 20 • NOISE FIGURE: 4.0 dB TYP DESCRIPTION The UPC2749TB is a Silicon RF Integrated Circuit which is

Contextual Info: 3 V, 1900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2749T NOISE FIGURE AND GAIN vs. FREQUENCY Vcc = 3.0 V FEATURES 16 dB GAIN WITH 4 dB NOISE FIGURE AT 1900 MHz LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V LOW POWER CONSUMPTION: 18 mW TYP SUPER SMALL PACKAGE m TJ TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2749TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The ^¡PC2749TB is a silicon monolithic integrated circuit designed as amplifier for mobile comm unications. This

Contextual Info: 3 V, SUPER MINIMOLD UPC2749TB 1900 MHz SI MMIC AMPLIFIER NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package 18 4.5 16 4.0 14 3.5 12 3.0 10 2.5 • SUPPLY VOLTAGE: VCC = 2.7 to 3.3 V

UPC2749T

Abstract: UPC2749T-E3 uPC27
Contextual Info: 3 V, 1900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2749T NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V FEATURES • 16 dB GAIN WITH 4 dB NOISE FIGURE AT 1900 MHz • LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V 18 4.5 16 4.0 • TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: 3 V, 1900 MHz LOW NOISE SI MMIC AMPLIFIER FEATURES UPC2749T NOISE FIGURE AND GAIN vs. FREQUENCY Vcc = 3.0 V 16 dB GAIN WITH 4 dB NOISE FIGURE AT 1900 MHz LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V LOW POWER CONSUMPTION: 18 mW TYP SUPER SMALL PACKAGE CQ •o TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: 3 V, 1900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2749T NOISE FIGURE AND GAIN v *. FREQUENCY Vcc = 3.0 V FEATURES 16 dB GAIN WITH 4 dB NOISE FIGURE AT 1900 MHz LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V LOW POWER CONSUMPTION: 18 mW TYP SUPER SMALL PACKAGE CD •o TAPE AND REEL PACKAGING OPTION AVAILABLE

UPC2749T

Abstract: UPC2749T-E3
Contextual Info: 3 V, 1900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2749T NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V FEATURES • 16 dB GAIN WITH 4 dB NOISE FIGURE AT 1900 MHz • LOW VOLTAGE - LOW CURRENT: 6 mA at 3 V 18 4.5 16 4.0 • TAPE AND REEL PACKAGING OPTION AVAILABLE

UPC2749T

Abstract: UPC2749TB UPC2749TB-E3-A
Contextual Info: 3 V, SUPER MINIMOLD UPC2749TB 1900 MHz SI RFIC AMPLIFIER FEATURES GAIN vs. FREQUENCY AND TEMPERATURE • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package 25 VCC = 3.0 V • GAIN: 16 dB TYP 20 • NOISE FIGURE: 4.0 dB TYP DESCRIPTION NEC's UPC2749TB is a Silicon RF Integrated Circuit which is

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2749TB 3 V, SUPER MINIMOLD 1900 MHz SI RFIC AMPLIFIER FEATURES GAIN vs. FREQUENCY AND TEMPERATURE • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package 25 • GAIN: 16 dB TYP VCC = 3.0 V 20 • SUPPLY VOLTAGE: VCC = 2.7 to 3.3 V

UPC2712T

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS ¿JPC2745T, UPC2749T 3V-BIAS, 2.7 G Hz/2.9 GHz WIDE-BAND S iM M IC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION /¿PC2745T and /¿PC2749T are silicon m o n o lit h ic in te g ra te d c ircu its de s ig n e d as bu ffe r a m p lifie r s fo r m o b ile

UPC2749TB

Contextual Info: 3 V, SUPER MINIMOLD UPC2749TB 1900 MHz SI MMIC AMPLIFIER NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package 18 4.5 16 4.0 14 3.5 12 3.0 10 2.5 • SUPPLY VOLTAGE: VCC = 2.7 to 3.3 V

vmt3

Contextual Info: 3 V, 1900 MHz LOW NOISE SI MMIC AMPLIFIER UPC2749T NOISE FIGURE AND GAIN vs. FREQUENCY Vcc = 3.0 V FEATURES 16 dB GAIN W ITH 4 dB NOISE FIG URE AT 1900 MHz LOW VO LTA G E - LO W CU RREN T: 6 mA at 3 V LOW PO W ER CO N SU M PTIO N : 18 mW TYP SUPER SM ALL PACKAG E

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

16F NEC

Abstract: UPB1004GS UPB1004GS-E1 UPC2749T RF mixer 433 Mhz tcxo 16.368MHz
Contextual Info: PRELIMINARY DATA SHEET 3V DUAL DOWNCONVERTER AND PLL FREQUENCY SYNTHESIZER UPB1004GS FEATURES DESCRIPTION • INTEGRATED RF BLOCK: RF & IF Downconverter + PLL frequency synthesizer • DOUBLE-CONVERSION: f1stIF = 61.380 MHz f2ndIF = 4.092 MHz The UPB1004GS is a Silicon Monolithic Integrated Circuit

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17