UNR32AN Search Results
UNR32AN Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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UNR32AN |
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Composite Device - Transistors with built-in Resistor | Original | 76.74KB | 3 | ||
UNR32AN00L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | 3 | |||
UNR32ANG0L |
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 100MW SSSMINI3 | Original | 4 |
UNR32AN Price and Stock
Panasonic Electronic Components UNR32ANG0LTRANS PREBIAS NPN 50V SSSMINI3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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UNR32ANG0L | Reel | 10,000 |
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Panasonic Electronic Components UNR32AN00LTRANS PREBIAS NPN 50V SSSMINI3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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UNR32AN00L | Reel |
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Buy Now |
UNR32AN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ANG Silicon NPN epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features • Suitable for high-density mounting and downsizing of the equipment |
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2002/95/EC) UNR32ANG | |
UNR32ANGContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ANG Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C |
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2002/95/EC) UNR32ANG UNR32ANG | |
Contextual Info: Transistors with built-in Resistor UNR32AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 1.20±0.05 0.80±0.05 1 0.23+0.05 |
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UNR32AN | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C |
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2002/95/EC) UNR32AN | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C |
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2002/95/EC) UNR32AN | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ANG Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Suitable for high-density mounting and downsizing of the equipment |
Original |
2002/95/EC) UNR32ANG | |
UNR32ANGContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ANG Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: KL • Pin Name 1: Base 2: Emitter |
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2002/95/EC) UNR32ANG UNR32ANG | |
UNR32ANContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C |
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2002/95/EC) UNR32AN UNR32AN | |
UNR32AN
Abstract: SSSMini3-F1 transistor
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UNR32AN UNR32AN SSSMini3-F1 transistor | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 0.80±0.05 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40) |
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2002/95/EC) UNR32AN | |
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
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PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent | |
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
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respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP043AN Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.03 0.12 -0.02 4 1.00±0.05 Parameter Symbol Collector-base voltage |
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2002/95/EC) NP043AN | |
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
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responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE | |
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Contextual Info: Composite Transistors NP062AN Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.12+0.03 -0.02 4 1 2 0 to 0.02 3 0.10 • Two elements incorporated into one package • Suitable for high-density mounting and downsizing of the equipment |
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NP062AN UNR32AN 125nteed | |
UNR31AB
Abstract: matsushita pnp UNR31A1 UNR31A2 UNR31A4 UNR31AD UNR31AE UNR31AM UNR31AN UNR31AT
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OCR Scan |
UNR31AÃ UNR32A UNR31AB matsushita pnp UNR31A1 UNR31A2 UNR31A4 UNR31AD UNR31AE UNR31AM UNR31AN UNR31AT | |
NP062AN
Abstract: UNR32AN
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2002/95/EC) NP062AN NP062AN UNR32AN | |
NP043AN
Abstract: UNR31AN UNR32AN
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2002/95/EC) NP043AN NP043AN UNR31AN UNR32AN | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP062AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.12+0.03 -0.02 4 1 2 0 to 0.02 3 0.10 • Two elements incorporated into one package • Suitable for high-density mounting and downsizing of the equipment |
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2002/95/EC) NP062AN UNR32AN | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP062AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.12+0.03 -0.02 4 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 • Features 1 2 3 0.10 • Two elements incorporated into one package |
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2002/95/EC) NP062AN UNR32AN | |
NP043AN
Abstract: UNR31AN UNR32AN
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2002/95/EC) NP043AN UNR31AN UNR32AN NP043AN UNR31AN UNR32AN | |
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
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XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 | |
NP062AN
Abstract: UNR32AN
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NP062AN UNR32AN NP062AN UNR32AN |