UNMATCHED BARE AMPLIFIER Search Results

GSH912-12

Abstract: GSH912 RG03 GSH912-00 angS12 0841 MAG-S11 unmatched bare amplifier 179-14 1200UM
Contextual Info: GSH912 1200um Discrete HFET Product Features ● 0. 1 to 12GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3 dB Noise Figure ● Bare Die -00 or 0805 DFN (-12) plastic package Product Description The GSH912 is an unmatched General Purpose Medium Power Amplifier

Contextual Info: PRELIMINARY CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2060025D

Contextual Info: CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

GSP7427-00

Abstract: C 2120 Y unmatched bare amplifier
Contextual Info: GSP7427-00 InGaP HBT Medium Power Amplifier Product Features Product Description ● 0. 1 to 6GHz Frequency Range The GSP7427-00 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 6GHz frequency range with 16 dB nominal matched gain at 2GHz. It also has superior Third Order

2160 transistor

Abstract: GSP7427 GSP7427-89 RO4003 C 2120 Y unmatched bare amplifier W-335 L381
Contextual Info: GSP7427-89 InGaP HBT Medium Power Amplifier Product Features Product Description ● 0. 1 to 6GHz Frequency Range The GSP7427-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 6GHz frequency range with 16 dB nominal matched gain at 2GHz. It also has superior Third Order

CGH40025P

Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
Contextual Info: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors

MHW6181

Abstract: MRF151G MRF9135LS MRF455 APPLICATION NOTES amplifier mrf247 MRF247 MRF171A MRF21180 MRF374A MRF428
Contextual Info: 7 2 , R O T C U D N RF AND IF O C S E H C AR D E IV BY E L A C MI SE E R F WWW.MOTOROLA.COM/SEMICONDUCTORS QUARTER 4, 2001 SPSSG1009/D REV 0 :KDW•V 1HZ Market Part General Purpose RF SiGe:C LNA and Cascode Amplifier MBC13720, MBC13916 Land Mobile Radio MRF1535T1, MRF1550T1

Solar Charge Controller Circuit PWM

Abstract: Solar Charge Controller PWM solar array shunt regulator military passive component Solar Charge Controller driver circuits military switch Solar Charge Controller Circuit Microwave PIN diode PWM Solar Charge Controller solar shunt regulator
Contextual Info: HIGH RELIABILITY discretes & modules R more than solutions - enabling possibilities Microsemi TM Meet the Industry's of High Reliability Devices Microsemi, already a world leader in military/aerospace discrete semiconductor products, has rallied its forces to create an even stronger source of high reliability military and aerospace discrete

Contextual Info: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB

RF3930D

Abstract: RF3930
Contextual Info: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB

Contextual Info: MX-LN series 1550 nm band Intensity Modulators Delivering Modulation Solutions Modulator The MX-LN series are lithium niobate LiNb03 intensity modulators designed for optical communications at data rates up to 44 Gb/s. The X-cut design of this Mach-Zehnder modulators confer them an

Contextual Info: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

Amplifier 10W bluetooth

Abstract: DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector RF3930d 3930D SiC diode die
Contextual Info: RF3930D 10W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain = 19dB at 2GHz  48V Typical Performance  Output Power: 16W at P3dB  Drain Efficiency: 70% at P3dB

Contextual Info: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

Contextual Info: RFHA1101 RFHA1101 4.3W GaN On SiC Power Amplifier Die-On-Carrier The RFHA1101 is a 28V, 4.3W, GaN on SiC high power discrete amplifier die-on carrier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband

Contextual Info: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB

Contextual Info: RFHA1101D RFHA1101D 4.3W GaN on SiC Power Amplifier Die Package: Die The RFHA1101D is a 28V, 4.3W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical,

Contextual Info: RFHA1101 Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

RFHA

Abstract: RFHA1101
Contextual Info: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

Contextual Info: RF3930D RF3930D 10W GaN on SiC Power Amplifier Die Package: Die The RF3930D is a 48V, 10W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general

Contextual Info: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB

Contextual Info: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance

Contextual Info: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB

Contextual Info: RF3933D RF3933D 90W GaN on SiC Power Amplifier Die Package: Die The RF3933D is a 48V, 90W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/ medical and general