UNITED DETECTOR SILICON PHOTODIODE Search Results

United Detector Technology Photodiodes

Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
Contextual Info: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS

301B-AC

Abstract: United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D FIL-100C fil 3c
Contextual Info: 77C 00841 d ~ r~ 77 DË T | ' m O T à ? 9310987 UNITED DETECTOR UNIT E» DETECTOR SILICON PHOTODIODES dOGOflm fl FIL* PHOTOCONDUCTIVE DEVICES PC \ : \ Parameter & Unit Active Surface Area . Typ. Junction •; ; Capacitance-C j. ' Typical . Responsivity-R\

Contextual Info: Laser Diodes 500um General PurposePhotoDiodes Silicon PhotoDiodes 1 mmDiameter Diameter InGaAs PD-LD Inc. offers a 500um diameter photoconductive Silicon Photodiode suitable for applications requiring response times of up to 6nsec. The planar diffused device

Contextual Info: Laser Diodes Standard-Area Silicon PIN Photodiodes 500µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs in fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum

United Detector silicon photodiode

Abstract: near IR photodiodes centronic photodiodes photodetector centronic package 1
Contextual Info: Electro-Optics Silicon Photodiodes HYBRID PHOTODETECTOR NEW www.centronic.us Amplified Single Element Detector ASD Series Centronic ASD Series integrate high performance single element photodiodes coupled to a high input impedance opamp to create a low noise, high gain photodetector. Light

Contextual Info: Electro-Optics Silicon Photodiodes HYBRID PHOTODETECTOR www.centronic.co.uk Amplified Single Element Detector ASD Series Centronic ASD Series integrate high performance single element photodiodes coupled to a high input impedance opamp to create a low noise, high gain photodetector. Light

C1103-02

Abstract: m5920 m59203 S3477-03
Contextual Info: THERMOELECTRICALLY-COOLED SILICON PHOTODIODES S2592, S3477 SERIES HAM AM ATSU TECHNICAL DATA For low-light-level detection from UV to near IR. Highly stable operation. Hamamatsu offers therm oelectrical ly-cooled silicon photodiodes with a wide sensitivity range from UV to

electron Detector

Abstract: S11142 United Detector silicon photodiode electron electron gun SE-171
Contextual Info: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron

Contextual Info: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron

C2719

Abstract: K1713-01 Hamamatsu PbS TWO COLOR DETECTOR UV Flame detector pbs photoconductive DETECTOR FLAME A3179-03 C1103-04 K1713-02
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Hamamatsu PbS

Abstract: K1713-02 K3413-01 K3413-02 A3179-03 C1103-04 C2719 C3757-02 K1713-01
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

C1103-04

Abstract: flame detector structure K1713 TWO COLOR DETECTOR two color photodiode Hamamatsu PbS DETECTOR FLAME Semiconductor Radiation Detector SI PBS DETECTOR transistor 1BW
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: P RE L I M I NARY Detectors UV-Enhanced Silicon Avalanche Photodiode SUR-Series Description The SUR-Series is based on a silicon “reach-through” structure with high sensitivity in the DUV/UV wavelength range . Many applications particularly in the medical and

United Detector silicon photodiode

Abstract: United Detector Technology photodiode United Detector Technology, silicon photodiode United Detector silicon bpw 50 80805 LED BPW 75 FM25100 BPW21
Contextual Info: Electro-Optics Silicon Photodetectors SERIES BPW 21 Internationally recognised eye response silicon P on N Photodiode TYPICAL CHARACTERISTICS @ 23°C Responsivity Standard Illuminant A.2854°K Wavelength for Peak Responsivity Useful Wavelength Range Maximum Operating Voltage

spot light size photodiode

Abstract: S8382
Contextual Info: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

Contextual Info: SLD-67HFBG1 Silicon Photodiode Integral Infrared Rejection Filter Features • Large Area Planar Photodiode • Low capacitance, fast switching time • High responsivity • Low leakage current • Linear response vs irradiance • IR Blocking Filter • TO-5 package

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

UDT-PIN-10AP

Abstract: UDT-PIN United Detector Technology Photodiodes United Detector Technology United Detector Technology photodiode UDT 260 detector PIN-10AP United Detector silicon photodiode United Detector Technology, silicon photodiode PIN-10DF
Contextual Info: 48C 00681 9310987 UNITED DETECTOR UNITED DETECTOR UNITED D E T E C T O R DE 4fl T-41-53 r DETECTOR/FI LTER COMBINATIONS DDDDtfll 1 •HI! T EC H N O LO G Y D A TA S H E E T 9F006 DETECTOR/FILTER COMBINATIONS PIN - 10AP PIN - lO D FP — PIN - 10RP -C.I.E.-fHO'TOPIC H U M AN ÊYEJ