UNDERSHOOT VOLTAGE SPIKES Search Results

Contextual Info: Overshoot and Undershoot The “Absolute Maximum Ratings” table in the Xilinx Data Book restricts the signal- pin voltage to a maximum 500 mV excursion above VCC and below ground. The purpose of this tight specification is to prevent uncontrolled current in the input-clamping ESDprotection diodes. Such specifications are common in the industry; some manufacturers

Undershoot

Contextual Info: Overshoot and Undershoot The “Absolute Maximum Ratings” table in the Xilinx Data Book restricts the signal- pin voltage to a maximum 500 mV excursion above VCC and below ground. The purpose of this tight specification is to prevent uncontrolled current in the input-clamping ESDprotection diodes. Such specifications are common in the industry; some manufacturers

ttl cmos advantages disadvantages

Abstract: 74VCXF162835 FMS7857 FSTU16450 FSTU32160 FSTU3257 FSTU3384 FSTU6800 FSTUD16211 PC133 registered reference design
Contextual Info: Interface & Logic Fairchild Server Solutions Superior Performance Solutions: Bus Switches GTLP Interface Low-Voltage Logic DIMM Support Smaller Packaging Solutions: TinyLogic Ball Grid Array BGA Applications: Live Insertion For PCI and PCIx Bus and Backplanes

L6386 schematic

Abstract: st l6384 applications AN1263 AN1299 L6384 L6385 L6386 L6387 L638X L6386 application
Contextual Info: AN1299 APPLICATION NOTE L638X TRICKS AND TIPS by Gian Paolo Meloncelli Topics covered: • Devices family • Internal diode structure • How to select Cboot • Parasitic elements in the half bridge topology • How to manage below ground voltage on out pin:

tms44c256

Abstract: SMALL SIGNAL SCHOTTKY DIODE "Schottky Diode" diode arrays line following CIRCUIT Schottky Diode 74AC11240 SN74S1050 TMS4256
Contextual Info: EB194E Schottky Diode Arrays EB194E SCHOTTKY DIODE ARRAYS Author: Eilhard Haseloff Date: October 10th, 1990 Rev.: A Revised August 30th, 1995 1 Applikationslabor EB194E Schottky Diode Arrays The trend towards faster and faster systems means that the circuit designer has to

AB16

Abstract: PDSP1601
Contextual Info: AB16 Interfacing the PDSP Family Application Brief AB16 ISSUE 3.0 June 1996 INTRODUCTION Zarlink Semiconductor's PDSP family of DSP functional blocks are fabricated on a high speed CMOS process, and incorporate several design features to ease interfacing and board layout. However there are a few precautions which should be taken which

Pascal

Abstract: LM25M def stan 07-55
Contextual Info: EN ISO9001 POWERMITE CONVERTER www.pascall.co.uk Powermite 50 Watt dc/dc Converters 18-32 Volts dc input EMC to MIL STD 461C Fixed Switching Frequency Low Output Noise This series of switch mode power dc/dc converters provide the military electronics design engineer with a highly specified, cost effective and

br1941

Abstract: com8116 TTL 7400 oscilator WD1943 COM5016 d1943 COM5036 Q-MATIC OM5036 stt 128
Contextual Info: WESTERN DiC/TAL C O R P O R A T I O N W D 19 43 81 36 Dual B aud R ate C lo ck X TAL/EXT 1 d CH ^ fR nz cm Rc l = 4 5 6 rd C Z 7 12 STR NC C Z 8 9 11 10 r b c z • ROM MASKABLE FOR NON-STANDARD FREQUENCE SELECTIONS • OUTPUTS A 50% DUTY CYCLE CLOCK WITH 0.01 %

DDR200

Abstract: DDR266A DDR266B K4H510438M-TCA2 K4H510438M-TCB0 K4H510438M-TLA2 K4H510838M-TCA2 K4H510838M-TLA2
Contextual Info: 512Mb DDR SDRAM DDR SDRAM Specification Version 0.7 - 1 - Rev. 0.7 May, 2002 512Mb DDR SDRAM Revision History Version 0.0 May, 2000 - Prototype 512Mb specification - DC current is "TBD" and will be defined from M-die Version 0.1(Apr,2001) - Added DC target spec values

XAPP342

Abstract: Signal Path Designer
Contextual Info: Application Note: CoolRunner R XPLA3 I/O Cell Characteristics XAPP342 v1.7 February 16, 2006 Summary This paper describes the features and benefits of the I/O cells provided by Xilinx CoolRunner® XPLA3 CPLDs. Introduction The I/O cell architecture used in XPLA3 CPLDs is intended to give designers maximum control

M34709VK

Contextual Info: Freescale Semiconductor Errata Document Number: MC34709ER Rev. 1.0, 10/2012 MC34709, Silicon Errata N88D Introduction Device Revision Identification This errata document applies to the following devices: Table 1. Silicon Revision Package Part Number Silicon Revision

Contextual Info: 512Mb DDR SDRAM Preliminary DDR SDRAM Specification Version 0.6 - 1 - REV. 0.6 Nov.30. 2001 512Mb DDR SDRAM Preliminary Revision History Version 0.0 May, 2000 - Prototype 512Mb specification - DC current is "TBD" and will be defined from M-die Version 0.1(Apr,2001)

K4H510838M-TCB0

Abstract: DDR200 DDR266A DDR266B K4H510438M-TCA2 K4H510438M-TCB0 K4H510438M-TLA2 K4H510438M-TLB0 K4H510838M-TCA2 K4H510838M-TLA2
Contextual Info: 512Mb DDR SDRAM Preliminary DDR SDRAM Specification Version 0.5 - 1 - REV. 0.5 Nov.3. 2001 512Mb DDR SDRAM Preliminary Revision History Version 0.0 May, 2000 - Prototype 512Mb specification - DC current is "TBD" and will be defined from M-die Version 0.1(Apr,2001)

Contextual Info: 512Mb DDR SDRAM DDR SDRAM Specification Version 0.8 - 1 - Rev. 0.8 Dec, 2002 512Mb DDR SDRAM Revision History Version 0.0 May, 2000 - Prototype 512Mb specification - DC current is "TBD" and will be defined from M-die Version 0.1(Apr,2001) - Added DC target spec values

ECONO2-6PACK IGBT module

Abstract: IGBT DRIVER SCHEMATIC 3 PHASE IGBT DRIVER SCHEMATIC IRF igbt gate driver 3 phase IGBT gate driver 3 phase igbt driver schematic IGBT desaturation Motor Driver Circuit schematic 10 ampere high power igbt controller high side IGBT driver
Contextual Info: Datasheet rev 2.1 IRMD22141SS IRMD22141SS Demo Board For 3-phase / 380V motor drives IRMD22141SS Demo Board • • • • • • • • • • • Up to 1200V DC-bus capability Up to 50A maximum phase current Optional on-board phase shunt resistors 3 x IR22141SS devices connected in 3phase configuration

K4H280838C-TCB0

Abstract: DDR200 DDR266A DDR266B DDR333 samsung xsr samsung 128Mb DDR SDRAM 0.3 1998
Contextual Info: 128Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.7 - 1 - REV. 0.7 Nov.3. 2001 128Mb C-die(x4/8) DDR SDRAM 128Mb C-die Revision History Version 0 (Jan, 2001) - First version for internal review Version 0.1(Feb, 2001) - Changed spec to preliminary version.

Contextual Info: 128Mb D-die x16 DDR SDRAM DDR SDRAM Specification Version 0.5 - 1 - REV. 0.5 Jan. 31. 2002 128Mb D-die(x16) DDR SDRAM Revision History Version 0 (July, 2001) - First version for internal review Version 0.1 (September, 2001) - Changed spec to preliminary version

K4H560838C-TCA2

Abstract: K4H560838C-TCB3
Contextual Info: 256Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.6 - 1 - REV. 0.7 Jan. 31. 2002 256Mb C-die(x4/8) DDR SDRAM Revision History Version 0 (May, 2001) - First version for internal review of 256Mb C-die. Version 0.1 (July, 2001) - Updated target current spec(TSOP package base)

Contextual Info: 128Mb D-die x16 DDR SDRAM DDR SDRAM Specification Version 0.5 - 1 - REV. 0.5 Jan. 31. 2002 128Mb D-die(x16) DDR SDRAM Revision History Version 0 (July, 2001) - First version for internal review Version 0.1 (September, 2001) - Changed spec to preliminary version

K4H280838D-TCB3

Contextual Info: 128Mb D-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.2 - 1 - REV. 0.3 Jan.31. 2001 128Mb D-die(x4/8) DDR SDRAM 128Mb D-die(x4/8) Revision History Version 0 (November, 2001) - First version for internal review Version 0.1 (December, 2001) - Changed spec. from target to preliminry

K4H560838D-TCB0 256MB

Abstract: K4H560838D-TCB3 K4H561638D-TLB3 k4h560838d-tcb0
Contextual Info: 256Mb D-die DDR SDRAM DDR SDRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 31. 2002 256Mb D-die DDR SDRAM Revision History Version 0 November, 2001 - First version for internal review of 256Mb D-die. Version 0.1 (December, 2001) - Changed spec. from target to preliminry

Quasi-resonant Converter for induction cooker

Abstract: 1kw single phase IGBT inverter IC Module inverter Controller PWM 1kw igbt induction cooker induction heating cooker motor driver full bridge mosfet 10A 100V induction cooker universal AC Motor soft start induction heating 230V pwm inverter single phase UPS
Contextual Info: 1 Smart Power Module Series 10A to 20A Smart Power Module SPM products in compact Dual In-line Packages (DIP) offer • Adjustable current protection level · Inverter power rating of 0.4kW, 0.75kW, 1kW and 1.4kW/100V AC to 253V AC

Contextual Info: 256Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 Nov. 3. 2001 256Mb DDR SDRAM Revision History Version 0 May, 2000 - First version for internal review of 256Mb B-die. Version 0.1(July,2000) - Added DC target spec values - Deleted tDAL in AC parameter X

Contextual Info: 256Mb DDR SDRAM DDR SDRAM Specification Version 0.9 - 1 - REV. 0.9 Oct. 29. 2001 256Mb DDR SDRAM Revision History Version 0 May, 2000 - First version for internal review of 256Mb B-die. Version 0.1(July,2000) - Added DC target spec values - Deleted tDAL in AC parameter X