2004 - UN9112J
Abstract: UN9110J UN9111J UN9113J UN9114J UNR9110J UNR9111J UNR9112J UNR9113J UNR9114J
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR911xJ Series ( UN911xJ Series) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 0.03 For digital circuits 0.12+0.03 0.01 (0.375) 1.60±0.05 (0.80) 1: Base 2: Emitter 3: Collector EIAJ: SC-89 0.10 max. (0.50)(0.50) 0 to 0.02 (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 100 k 47 k
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2002/95/EC)
UNR911xJ
UN911xJ
SC-89
UNR9110J
UN9110J)
UNR9111J
UN9111J)
UNR9112J
UN9112J)
UN9112J
UN9110J
UN9111J
UN9113J
UN9114J
UNR9110J
UNR9111J
UNR9112J
UNR9113J
UNR9114J
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2004 - Not Available
Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR911xJ Series ( UN911xJ Series) Silicon PNP epitaxial planar type For digital circuits Features · Costs can be reduced through downsizing of the equipment and reduction of the number of parts. · SS-Mini type package, allowing automatic insertion through tape packing. 1.60+0.05 0.03 1.00±0.05 3 0.80±0.05 Unit: mm 0.12+0.03 0.01 1.60±0.05 0.85+0.05 0.03 1 0.27±0.02 2
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Original
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PDF
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2002/95/EC)
UNR911xJ
UN911xJ
UNR9110J
UN9110J)
UNR9111J
UN9111J)
UNR9112J
UN9112J)
UNR9113J
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2004 - UNR9113J
Abstract: 9114J UN9110J UN9111J UN9112J UN9113J UN9114J UNR9110J UNR9111J UNR9112J
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR911xJ Series ( UN911xJ Series) Silicon PNP epitaxial planar type 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 0.03 For digital circuits 0.12+0.03 0.01 (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 100 k 47 k 10 k 22 k 10 k 10 k 4.7 k 47 k 47 k 47 k 2.2 k (0.375) 0.10 max. 5° Marking Symbol (R1) · UNR9110J (UN9110J) 6L 47 k · UNR9111J (UN9111J) 6A 10 k ·
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Original
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PDF
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2002/95/EC)
UNR911xJ
UN911xJ
UNR9110J
UN9110J)
UNR9111J
UN9111J)
UNR9112J
UN9112J)
UNR9113J
UNR9113J
9114J
UN9110J
UN9111J
UN9112J
UN9113J
UN9114J
UNR9110J
UNR9111J
UNR9112J
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2004 - UN9110J
Abstract: UN9111J UN9112J UN9113J UN9114J UNR9110J UNR9111J UNR9112J UNR9113J UNR9114J
Text: Transistors with built-in Resistor UNR911xJ Series ( UN911xJ Series) Silicon PNP epitaxial planar type 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 0.03 For digital circuits 0.12+0.03 0.01 (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 100 k 47 k 10 k 22 k 10 k 10 k 4.7 k 47 k 47 k 47 k 2.2 k (0.375) 0.10 max. 5° Marking Symbol (R1) · UNR9110J (UN9110J) 6L 47 k · UNR9111J (UN9111J) 6A 10 k · UNR9112J (UN9112J) 6B 22 k · UNR9113J (UN9113J) 6C 47 k ·
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Original
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PDF
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UNR911xJ
UN911xJ
UNR9110J
UN9110J)
UNR9111J
UN9111J)
UNR9112J
UN9112J)
UNR9113J
UN9113J)
UN9110J
UN9111J
UN9112J
UN9113J
UN9114J
UNR9110J
UNR9111J
UNR9112J
UNR9113J
UNR9114J
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UNR911A
Abstract: UN9110J UN9111J UN9112J UN9113J UN9114J UNR9110J UNR9111J UNR9112J UNR9113J
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR911xJ Series ( UN911xJ Series) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 0.03 For digital circuits 0.12+0.03 0.01 (0.375) 1.60±0.05 (0.80) 1: Base 2: Emitter 3: Collector EIAJ: SC-89 0.10 max. (0.50)(0.50) 0 to 0.02 (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 100 k 47 k
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Original
|
PDF
|
2002/95/EC)
UNR911xJ
UN911xJ
SC-89
UNR9110J
UN9110J)
UNR9111J
UN9111J)
UNR9112J
UN9112J)
UNR911A
UN9110J
UN9111J
UN9112J
UN9113J
UN9114J
UNR9110J
UNR9111J
UNR9112J
UNR9113J
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Not Available
Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR911xJ Series ( UN911xJ Series) Silicon PNP epitaxial planar type 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 â0.03 For digital circuits 0.12+0.03 â0.01 (0.375) 1.60±0.05 2 0.27±0.02 int en an ce /D isc on tin ue (R2)  10 k⦠22 k⦠47 k⦠47 k⦠   5.1 k⦠10 k⦠100 k⦠ 47 k⦠10 k⦠22 k⦠10 k⦠10 k⦠4.7 kâ
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Original
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PDF
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2002/95/EC)
UNR911xJ
UN911xJ
SC-89
UNR9110J
UN9110J)
UNR9111J
UN9111J)
UNR9112J
UN9112J)
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