ic MARKING FZ
Abstract: UN2225 UNR2225
Contextual Info: Transistors with built-in Resistor UNR2225 UN2225 Silicon NPN epitaxial planer type Unit: mm 0.40+0.10 –0.05 For muting circuit 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low collector to emitter saturation voltage VCE(sat) , optimum for
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ic MARKING FZ
Abstract: UN2225 UN2226 UN2227 UNR2225 UNR2226 UNR2227
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 • Costs can be reduced through downsizing of the equipment and
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 • Costs can be reduced through downsizing of the equipment and
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TRANSISTOR 2226
Abstract: 2226 transistor UNR2227
Contextual Info: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 0.4±0.2 2.90+0.20 –0.05 (R2) 6.8 kΩ 1.1+0.2
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unr2225/2226/2227un2225/2226/2227unr2225unr2226+4unr2227sjh00040aedtransistor 22262226 transistor
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 • Costs can be reduced through downsizing of the equipment and
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ic MARKING FZ
Abstract: UN2225 UN2226 UN2227 UNR2225 UNR2226 UNR2227
Contextual Info: Transistors with built-in Resistor UNR2225 UN2225 , UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 • Costs can be reduced through downsizing of the equipment and
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UN2225
Abstract: UN2226 UN2227 UNR2225 UNR2226 UNR2227
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 (0.65)
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2226 transistor
Abstract: ic MARKING FZ UNR2225 UNR2226 UNR2227 transistor 2227
Contextual Info: Transistors with built-in Resistor UNR2225/2226/2227 UN2225/2226/2227 Silicon NPN epitaxial planer transistor Unit: mm For muting 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Resistance by Part Number 2.90+0.20 –0.05 (R2) 6.8 kΩ
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unr2225/2226/2227un2225/2226/2227unr2225unr2226+4unr22272226 transistoric marking fztransistor 2227
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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pamp13-n1mip2f3mip2f4mip382+7mip2e7dmymip2f2mip291mip414smip2e5dmymip411mip3e3smy equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928
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ON3105
Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S
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mn1001mn1020215mn1020407mn1020415+16mn1020715mn102lf53gmn1040mn110mn1101mn115on31052sd2603mn41174052sc901bmn6520mn1280mn1225mn6147c2sc5573gn2013
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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