ULTRA-SMALL DFN1006 PACKAGE Search Results
ULTRA-SMALL DFN1006 PACKAGE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| LXMSJZNCMH-225 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag | |||
| LXMS21NCMH-230 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag | |||
| CLC449A/BPA |
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CLC449 - Op Amp, Ultra-Wideband, 1.2 GHZ - Dual marked (5962-9752001MPA) |
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| 54ACT825/QKA |
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54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP |
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| LBUA5QJ2AB-828 | Murata Manufacturing Co Ltd | QORVO UWB MODULE |
ULTRA-SMALL DFN1006 PACKAGE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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DFN1006-3
Abstract: BC847BLP BC857BLP BC857BLP-7 transistor marking 12x
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BC857BLP BC847BLP) DFN1006-3 DS30526 DFN1006-3 BC847BLP BC857BLP BC857BLP-7 transistor marking 12x | |
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Contextual Info: SO T8 83 PESD5V0X2UAM Ultra low capacitance unidirectional double ESD protection diode 10 April 2014 Product data sheet 1. General description Ultra low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a DFN1006-3 (SOT883) leadless ultra small Surface-Mounted Device (SMD) |
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DFN1006-3 OT883) IEC61000-4-2 AEC-Q101 | |
SOD962
Abstract: DFN1006B-3 DFN1410-6 DFN2510 SOT1157 DFN1608D-2 DFN1006 SOT1061 SOT891 SOD-16
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DSN0603-2* OD962) DFN1006D-2 OD882D) DFN1006-2 OD882) DFN1608D-2 OD1608) DFN1006B-3 OT883B) SOD962 DFN1006B-3 DFN1410-6 DFN2510 SOT1157 DFN1608D-2 DFN1006 SOT1061 SOT891 SOD-16 | |
A12 diode
Abstract: diode 0450
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DFN1006) MIL-STD-750, C/10s IEC61000-4-2 IEC61000-4-4 5/50s) 8/20s A12 diode diode 0450 | |
diode marking LM
Abstract: diode Marking Code lm marking code 150a DEVICE MARKING CODE 150A DFN1006-2 SDM20U30LP SDM20U30LP-7
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SDM20U30LP DFN1006-2 MIL-STD-202, DS30589 diode marking LM diode Marking Code lm marking code 150a DEVICE MARKING CODE 150A DFN1006-2 SDM20U30LP SDM20U30LP-7 | |
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Contextual Info: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 8 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ950UPE DFN1006-3 OT883) | |
transistor smd wzContextual Info: SO T8 83 NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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NX7002BKM DFN1006-3 OT883) transistor smd wz | |
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Contextual Info: SO T8 83 PMZ370UNE 30 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ370UNE DFN1006-3 OT883) | |
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Contextual Info: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 9 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ600UNE DFN1006-3 OT883) | |
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Contextual Info: SO T8 83 PMZ600UNE 20 V, N-channel Trench MOSFET 26 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ600UNE DFN1006-3 OT883) | |
ds3-0505
Abstract: BAS16LP BAS16LP-7 DFN1006-2 A6 marking marking a6
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BAS16LP DFN1006-2 AEC-Q101 DS30505 ds3-0505 BAS16LP BAS16LP-7 DFN1006-2 A6 marking marking a6 | |
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Contextual Info: SO T8 83 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ350UPE DFN1006-3 OT883) | |
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Contextual Info: SO T8 83 PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ290UNE DFN1006-3 OT883) | |
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Contextual Info: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 10 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZ950UPE DFN1006-3 OT883) | |
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NX3008NBKMB
Abstract: IP4303CX4 PCMF2DFN1
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PESD18VF1BL PESD24VF1BL PESD18VF1BSF PESD24VF1BSF DFN1006 DSN0603 DFN2520 DFN4020 NX3008NBKMB IP4303CX4 PCMF2DFN1 | |
br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
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O-252 O-277A O-277B MA/DO-214AC DO-214A MC/DO-214AB br 123 s BAS54A BR3005 MS15N50 sod-23 BAS54C | |