ULTRA-LOW POWER SRAM Search Results

STM32L

Abstract: stm8l DSASW003737
Contextual Info: Ultra-low-power EnergyLiteTM MCUs Ultra-low-power platform key features ƒ Ultra-low-power ƒ Platform for 8-bit STM8L and 32-bit STM32L MCUs ƒ STMicroelectronics’ 130 nm ultra ultra-low-leakage low leakage process technology ƒ Pure efficiency ƒ Ultra-low-power modes: industry's lowest power consumption with 1.2µA mode

STM8L151

Abstract: STM32L STM8L151F3 STM8L151F2 stm8l152 STM8L101 stm8l STM32L15x stm8l dma stm8L151K3
Contextual Info: STM8L MCU family Ultra-low-power 8-bit microcontrollers September 2009 www.st.com/mcu STM8L ultra-low-power MCU family STMicroelectronics has developed an ultra-low-power family of MCUs based on the 8-bit STM8 core. Paving the way for a future comprehensive ultra-low-power platform, the STM8L family combines high performance and ultra-low

BH62UV4000

Abstract: BH62UV4000DI BH62UV4000SI BH62UV4000STI BH62UV4000TI TSOP-32
Contextual Info: Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit BH62UV4000 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V The BH62UV4000 is a high performance, ultra low power CMOS Ÿ Ultra low power consumption :

BGA-48-0608

Abstract: BH616UV1611
Contextual Info: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1611 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V The BH616UV1611 is a high performance, ultra low power CMOS y Ultra low power consumption :

BGA-48-0608

Abstract: BH616UV1611
Contextual Info: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1611 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V The BH616UV1611 is a high performance, ultra low power CMOS y Ultra low power consumption :

BGA-48-0608

Abstract: BH616UV1611 BH616UV1611A brilliance semiconductor rohs
Contextual Info: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1611 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V The BH616UV1611 is a high performance, ultra low power CMOS y Ultra low power consumption :

a10 bga-9

Abstract: BS616UV8011 BS616UV8011BC BS616UV8011BI BS616UV8011DC BS616UV8011DI BS616UV8011FC BS616UV8011FI 100PF
Contextual Info: Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI BS616UV8011 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current

BS62UV4000

Abstract: BS62UV4000EC BS62UV4000EI BS62UV4000PC BS62UV4000SC BS62UV4000SI BS62UV4000STC BS62UV4000STI BS62UV4000TC BS62UV4000TI
Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit BS62UV4000 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8V ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I -grade: 20mA (Max.) operating current

100PF

Abstract: BS616UV8010 BS616UV8010BC BS616UV8010BI
Contextual Info: Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI „ FEATURES BS616UV8010 „ DESCRIPTION • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I-grade : 20mA (Max.) operating current

100PF

Abstract: BS616UV1610 BS616UV1610BC BS616UV1610BI BS616UV1610FC BS616UV1610FI
Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ FEATURES „ DESCRIPTION • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 25mA Max. operating current I-grade : 30mA (Max.) operating current

BS616UV4010

Abstract: BS616UV4010BC BS616UV4010BI BS616UV4010DC BS616UV4010DI BS616UV4010EC BS616UV4010EI TSOP2-44
Contextual Info: Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit BSI BS616UV4010 „ FEATURES „ DESCRIPTION • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current

BGA-48-0608

Abstract: BS616UV1010 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI TSOP2-44
Contextual Info: Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010 BSI „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current

BS62UV256JI

Abstract: BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI BS62UV256 BS62UV256DC BS62UV256JC
Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit BS62UV256 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8V ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current

Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit BS62UV256 „ FEATURES „ DESCRIPTION • Ultra low operation voltage : 1.8V ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current

BS62UV256

Abstract: BS62UV256DC BS62UV256JC BS62UV256JI BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI
Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit BS62UV256 „ FEATURES „ DESCRIPTION • Ultra low operation voltage : 1.8V ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current

BGA-48-0608

Abstract: BS616UV2011 BS616UV2011AC BS616UV2011DC BS616UV2011DI BS616UV2011EC BS616UV2011EI BS616UV2011TC TSOP1-48 TSOP2-44
Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0 V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMOS standby current

BS616UV4020

Abstract: BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI
Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable „ FEATURES • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I-grade : 20mA (Max.) operating current

a10 bga-9

Abstract: transistors equivalent 0912 BS616UV1620 BS616UV1620BC BS616UV1620BI BS616UV1620FC BS616UV1620FI
Contextual Info: Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BSI BS616UV1620 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 1.8V C-grade : 25mA Max. operating current I- grade : 30mA (Max.) operating current

100PF

Abstract: BS616UV8020 BS616UV8020BC BS616UV8020BI
Contextual Info: Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BSI BS616UV8020 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8 ~3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I-grade : 20mA (Max.) operating current

TSOP1-48

Abstract: BGA-48-0608 BS616UV2011 BS616UV2011AC BS616UV2011DC BS616UV2011DI BS616UV2011EC BS616UV2011EI BS616UV2011TC TSOP2-44
Contextual Info: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0 V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMOS standby current

BS616UV8021

Abstract: BS616UV8021BC BS616UV8021BI BS616UV8021DC BS616UV8021DI BS616UV8021FC BS616UV8021FI
Contextual Info: Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BSI BS616UV8021 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current

32-PIN

Abstract: GVT73024UL8 GVT73024ULXX GVT73024ULXXB
Contextual Info: PRELIMINARY GALVANTECH, INC. ASYNCHRONOUS ULTRA LOW POWER FULL CMOS SRAM GVT73024UL8 ULTRA LOW POWER 128K X 8 SRAM 128K x 8 SRAM LOW POWER SUPPLY VOLTAGE LOW STANDBY CURRENT FEATURE GENERAL DESCRIPTION • • • The GVT73024UL8 is organized as a 131,072 x 8 SRAM

7085NS

Abstract: 7085NS 7085NS 7085NS MARKING 100ns 32-PIN GVT73024UL8 GVT73024ULXX GVT73024ULXXB
Contextual Info: PRELIMINARY GALVANTECH, INC. ASYNCHRONOUS ULTRA LOW POWER FULL CMOS SRAM GVT73024UL8 ULTRA LOW POWER 128K X 8 SRAM 128K x 8 SRAM LOW POWER SUPPLY VOLTAGE LOW STANDBY CURRENT FEATURE GENERAL DESCRIPTION • • • The GVT73024UL8 is organized as a 131,072 x 8 SRAM

Contextual Info: V62C2162096L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C2162096L is a Low Power CMOS Static