ULTRA POWER AA 24P Search Results

208 pin rqfp drawing

Abstract: 240 pin rqfp drawing BGA 144 MS-034 AAL-1 bga package weight 192 BGA PACKAGE thermal resistance
Contextual Info: Altera Device Package Information April 2002, ver. 10.2 Introduction Data Sheet This data sheet provides the following package information for all Altera devices: • ■ ■ ■ Lead materials Thermal resistance Package weights Package outlines In this data sheet, packages are listed in order of ascending pin count.

240 pin rqfp drawing

Abstract: BGA sumitomo 724p EP1C12 Altera pdip top mark epm7032 plcc FBGA672 192 BGA PACKAGE thermal resistance
Contextual Info: Altera Device Package Information February 2003, vers. 11.0 Introduction Data Sheet This data sheet provides package information for Altera devices. It includes these sections: • ■ ■ Device & Package Cross Reference below Thermal Resistance (starting on page 9)

ep600i

Abstract: JEDEC MS-034-AAJ-1 BGA Package 172 EP1800 MS-034 AAF-1 192PGA pdip 24 altera AP672 EP610 epm9560 die
Contextual Info: Altera Device Package Information May 2001, ver. 9.1 Introduction Data Sheet This data sheet provides the following package information for all Altera® devices: • ■ ■ ■ Lead materials Thermal resistance Package weights Package outlines In this data sheet, packages are listed in order of ascending pin count.

Contextual Info: PERFORMANCE SEMICONDUCTOR G3E D J TObSST? OOOOBM? fl P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS r r-V é -3 3 - /O ' FEBRUARY 1988 - FEATURES • Full CMOS, 6T Cell Single Power Supply — 5V ±10%

P4C188

Abstract: P4C188L
Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)

EP20K100E

Abstract: EP20K160E EP20K200 EP20K200E EP20K300E EP20K60E EP20K100 0245 TQFP-208 208RQFP 280-PGA
Contextual Info: Altera Device Package Information August 2000, ver. 8.03 Data Sheet 2 Introduction This data sheet provides the following package information for all Altera® devices: • ■ ■ ■ Lead materials Thermal resistance Package weights Package outlines In this data sheet, packages are listed in order of ascending pin count.

Contextual Info: Q u ic k S w itc h P ro d u c ts High-Speed, Low Power % .1« . q s 3L384 qs 3L2384 C » O S '» ’ I» ' ßus Switches FEATURES/BENEFITS DESCRIPTION • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs

Contextual Info: P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Separate Inputs and Outputs - P4C1681 Input Data at Outputs during Write - P4C1682 Outputs in High Z during Write Full CMOS, 6T Cell High Speed Equal Access and Cycle Times -12/15/20/25 ns (Commercial)

Contextual Info: m QuickSwitch Products High-Speed CMOS Ouality Semiconductor, I nc . r, 1° -B" LoW , qs3lr 384 advance INFORMATION P o W e r> L o W Resistance Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5 Q. bidirectional switches connect inputs

HT12H

Abstract: HT-12H
Contextual Info: QuickSwitch Products GB Sem iconductor , I n c . q s 3389 Last Value Latch 2 0 A c ,'V e P US T e r m in a to rs ßus Hold FEATURES/BENEFITS DESCRIPTION • Active termination pulls bus pins to rails • Holds last value of input signal • Ideal replacement for resistive termination

P4C168

Abstract: P4C1681 P4C1682 FE00-FE00
Contextual Info: P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Futi CMOS, 6T Cell Separate Inputs and Outputs - P4C1681 Input Data at Outputs during Write - P4C1682 Outputs in High Z during Write High Speed Equal Access and Cycle Times -1 2 /1 5 /2 0 /2 5 ns (Commercial)

P4C1258

Abstract: O513
Contextual Info: PERFORMANCE SEMICONDUCTOR 7Ob2517 OOOOfc.41 fl • SOE D P4C1258/P4C1258L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS jA FEATURES ■ High Speed (Equal A ccess and C ycle Tim es) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (M ilitary) ■ Three-State Outputs

Contextual Info: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)

FT6187

Contextual Info: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)

Contextual Info: PERFORMANCE SEMICONDUCTOR SQE D • iütaST? aPÜQtll T T - f i-23 - P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS À FEATURES ■ Full CMOS, 6T Cell Data Retention, 10 nA Typical Current from 2.0V. ■ High Speed (Equal Access and Cycle Times)

24-Pin Plastic DIP

Abstract: P4C147 P4C150
Contextual Info: P4C150 P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Single 5V ± 10% Power Supply Full CMOS, 6T Cell Separate Input and Output Ports High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military)

Contextual Info: PERFORMANCE SEMICO NDU CTOR SOE D • 70^25^7 Q00QST5 5 P4G187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS T - % - X l - 0 5 :- FEATURES Full CM O S, 6T Cell ■ Data Retention w ith 2.0V Supply High Speed (Equal Access and Cycle Tim es)

Contextual Info: P4C1682/P4C1682L, P4C1681 /P4C1681L ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS FEATURES Data Retention with 2.0V Supply, 0.5|iA Typical Current • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -12/15/20/25/35 ns (Commercial) - 20/25/35/45 ns (Military)

DIODE SMD A6

Abstract: 24-Pin Plastic DIP 5962-84036 P4C116
Contextual Info: P4C116 P4C116 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Output Enable Control Function High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Single 5V±10% Power Supply Common Data I/O

P4C422

Contextual Info: PERFORMANCE SEUICONDUCTOR SOE D 70^53*17 G0G17bfl fiflT P4C422 ULTRA HIGH SPEED 256 x 4 CMOS STATIC RAM V ¿ ,-2 IPSC 3 . FEATURES • Fast Access Time —8,10,12,15, 25 ns Commercial —15, 20, 25 ns (Military) 5 V Power Supply ±10% for both commercial and

Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell 5V ± 1 0 % Power Supply High Speed Equal Access and Cycle Times -1 0 /1 2 /1 5 /2 0 /2 5 ns (Commercial) -12/1 5 /2 0 /2 5 /3 5 ns (Industrial) -15 /2 0 /2 5 /3 5 /4 5 ns (Military)

Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)

TI33

Contextual Info: PERFORMANCE SEMICONDUCTOR EOE D • TObBST? D Q 0 0 ti33 1 P4C1257/P4C1257L ULTRA HIGH SPEED 256K x 1 STATIC CMOS RAMS SCRAMS A -FEATURES High Speed (Equal Access and Cycle Times) - 20/25/30/35 ns (Commercial)

1S21

Abstract: P4C150
Contextual Info: PERFORMANCE SEMICONDUCTOR 5 DE D • TDbESI? □ □ □ 1 Ô G 4 b^T « P S C P4C150 ULTRA HIGH SPEED 1K x 4 RESETTABLE STATIC CMOS RAM SCRAM FEATURES ■ Full CMOS, 6T Cell Three-State Outputs ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial)