ULTRA POWER AA 24P Search Results

240 pin rqfp drawing

Abstract: BGA sumitomo 724p EP1C12 Altera pdip top mark epm7032 plcc FBGA672 192 BGA PACKAGE thermal resistance
Contextual Info: Altera Device Package Information February 2003, vers. 11.0 Introduction Data Sheet This data sheet provides package information for Altera devices. It includes these sections: • ■ ■ Device & Package Cross Reference below Thermal Resistance (starting on page 9)

ep600i

Abstract: JEDEC MS-034-AAJ-1 BGA Package 172 EP1800 MS-034 AAF-1 192PGA pdip 24 altera AP672 EP610 epm9560 die
Contextual Info: Altera Device Package Information May 2001, ver. 9.1 Introduction Data Sheet This data sheet provides the following package information for all Altera® devices: • ■ ■ ■ Lead materials Thermal resistance Package weights Package outlines In this data sheet, packages are listed in order of ascending pin count.

EP20K100E

Abstract: EP20K160E EP20K200 EP20K200E EP20K300E EP20K60E EP20K100 0245 TQFP-208 208RQFP 280-PGA
Contextual Info: Altera Device Package Information August 2000, ver. 8.03 Data Sheet 2 Introduction This data sheet provides the following package information for all Altera® devices: • ■ ■ ■ Lead materials Thermal resistance Package weights Package outlines In this data sheet, packages are listed in order of ascending pin count.

HT12H

Abstract: HT-12H
Contextual Info: QuickSwitch Products GB Sem iconductor , I n c . q s 3389 Last Value Latch 2 0 A c ,'V e P US T e r m in a to rs ßus Hold FEATURES/BENEFITS DESCRIPTION • Active termination pulls bus pins to rails • Holds last value of input signal • Ideal replacement for resistive termination

P4C1258

Abstract: O513
Contextual Info: PERFORMANCE SEMICONDUCTOR 7Ob2517 OOOOfc.41 fl • SOE D P4C1258/P4C1258L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS jA FEATURES ■ High Speed (Equal A ccess and C ycle Tim es) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (M ilitary) ■ Three-State Outputs

Contextual Info: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)

FT6187

Contextual Info: FT6187/FT6187L Ultra High Speed 64K x 1 Static Cmos Rams FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply FT6187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)

24-Pin Plastic DIP

Abstract: P4C147 P4C150
Contextual Info: P4C150 P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Single 5V ± 10% Power Supply Full CMOS, 6T Cell Separate Input and Output Ports High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military)

DIODE SMD A6

Abstract: 24-Pin Plastic DIP 5962-84036 P4C116
Contextual Info: P4C116 P4C116 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Output Enable Control Function High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Single 5V±10% Power Supply Common Data I/O

P4C422

Contextual Info: PERFORMANCE SEUICONDUCTOR SOE D 70^53*17 G0G17bfl fiflT P4C422 ULTRA HIGH SPEED 256 x 4 CMOS STATIC RAM V ¿ ,-2 IPSC 3 . FEATURES • Fast Access Time —8,10,12,15, 25 ns Commercial —15, 20, 25 ns (Military) 5 V Power Supply ±10% for both commercial and

1S21

Abstract: P4C150
Contextual Info: PERFORMANCE SEMICONDUCTOR 5 DE D • TDbESI? □ □ □ 1 Ô G 4 b^T « P S C P4C150 ULTRA HIGH SPEED 1K x 4 RESETTABLE STATIC CMOS RAM SCRAM FEATURES ■ Full CMOS, 6T Cell Three-State Outputs ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial)

GG01

Abstract: P4C188 P4C188L VIEW19
Contextual Info: PERFORMANCE SE MICONDUCTOR SOE » • T O b S S 1!? DODlflSD 52T « P S C P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C188L Military) Three-State Outputs TTL/CMOS Compatible Outputs

P4C1681

Abstract: P4C1682
Contextual Info: PERFORMANCE SEMICONDUCTOR 50E D • VGbSSI? DOQlfiBb 1ST H P S C P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS -FEATURES Separate Inputs and Outputs - P4C1681 Input Data at Outputs during Write

P4C198

Abstract: P4C198A 3CE12
Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times -10 /1 2 /1 5 /2 0 /2 5 ns (Commercial) - 12/15/20/25/35 ns (Industrial) - 15/20/25/35/45 ns (Military)

PQFP 176

Abstract: 240 pin rqfp drawing EP3C5E144 EP1K50-208 processor cross reference EP3C16F484 MS-034 1152 BGA 84 FBGA thermal TQFP 144 PACKAGE DIMENSION FBGA 1760
Contextual Info: Altera Device Package Information May 2007 version 14.7 Document Revision History Data Sheet Table 1 shows the revision history for this document. Table 1. Document Revision History 1 Date and Document Version May 2007 v14.7 Changes Made ● ● ● ●

24-Pin Plastic DIP

Abstract: P4C168 P4C1681 P4C1682
Contextual Info: P4C1681, P4C1682 P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Separate Inputs and Outputs – P4C1681 Input Data at Outputs during Write – P4C1682 Outputs in High Z during Write Full CMOS, 6T Cell High Speed Equal Access and Cycle Times

22-PIN

Abstract: P4C187 P4C187L
Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)

Contextual Info: QuickSwitch Products Q u a l it y S em ico n d u cto r , I n c . High-Speed CMOS 10-Bit Low Power, Low Resistance Bus Switches QS3LR384 ADVANCE INFORMATION FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5Q bidirectional switches connect inputs

C8051F900

Abstract: C8051F912 C8051F9xx 32pin cmos sensor
Contextual Info: 1 The C8051F91x/0x product family is designed to dramatically increase battery lifetime which is the number one requirement for most battery powered applications. The C8051F91x has the industry’s lowest active mode current consumption which saves power when the application is running and also

Contextual Info: [fj ql^ ity S em iconductor , I n c . QuickSwitch Products High-Speed CMC6 Hn D -+ I n I 10-B t Low Power, Low Resistance Bus Switches QS3LR384 advance INFORMATION FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5Q. bidirectional switches connect inputs

24-Pin Plastic DIP

Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188 P4C188L
Contextual Info: P4C188/188L P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

Contextual Info: P4C1258/P4C1258L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS IPKELDIMIDNÄIRIV FEATURES High Speed (Equal Access and Cycle Times) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (Military) Three-State Outputs Low Power (Commercial/Military) - 605/660 mW Active

24-Pin Plastic DIP

Abstract: smd code WZ P4C187 P4C187L
Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)

smd code AA5

Abstract: RTC-72421B 4-pin 27mhz crystal XTAL 24MHZ 50PPM 6563 xtal 16mhz 8pf 10ppm MA-506 16.0000M xtal 16mhz 8pf 10ppm SMD rtc72421a 4pin xtal
Contextual Info: September 1, 2010 CONTENTS • • • • • • Crystals ……………….…………. Oscillators …………….………… SAW Oscillators ……….…. VCXO …………………….