ULTRA LOW NOISE FET Search Results

A7628

Abstract: a1137 transistor a979 8055 transistor
Contextual Info: H Avantek Products Ultra-Low Noise Surface Mount Amplifier 2000 to 4000 MHz Technical Data PPA-4213 Features Description Pin Configuration • Ultra Low Noise: 1.2 dB Typ The PPA-4213 is low current, high gain, ultra-low noise RF amplifier using HP GaAs FET technology

MAX6126

Abstract: APP3657 MAX4475 MAX8887 ultralownoise op-amp LDO application note AN3657 up/K 3657
Contextual Info: Maxim > App Notes > Amplifier and Comparator Circuits Power-Supply Circuits Keywords: low-dropout regulator, LDO, RC filter, voltage reference, low noise Dec 22, 2005 APPLICATION NOTE 3657 Ultra-Low-Noise LDO Achieves 6nV/√Hz Noise Performance Abstract: This ultra-low-noise LDO combines low-noise components with filtering to achieve an output noise

ULTRA LOW NOISE N-CHANNEL JFET

Abstract: Zener Diode 3v 400mW jfet n channel ultra low noise jfet transistor 2n4391 ultra low igss pA LS843 spice ultra low noise NPN transistor J210 spice Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET"
Contextual Info: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM RATINGS NOTE 1

Contextual Info: HMC606LC5 v04.0212 LOW NOISE AMPLIFIERS - SMT GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

Contextual Info: HMC606LC5 v05.0514 LOW NOISE AMPLIFIERS - SMT GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

mmic distributed amplifier

Abstract: HMC606LC5
Contextual Info: HMC606LC5 v04.0212 LOW NOISE AMPLIFIERS - SMT GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

Contextual Info: HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

117325

Contextual Info: HMC606LC5 v01.0807 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - SMT 5 Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

mmic distributed amplifier

Abstract: HMC606
Contextual Info: HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

mmic distributed amplifier

Abstract: V03120 HMC606LC5
Contextual Info: HMC606LC5 v03.1208 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - SMT 8 Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

Contextual Info: HMC606 v01.0807 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

HMC606LC5

Contextual Info: HMC606LC5 v02.1207 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - SMT 4 Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

HMC606

Contextual Info: HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

Contextual Info: HMC606 v01.0807 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

Pldro

Abstract: dielectric resonator oscillator PLDRO-10-7000-5P
Contextual Info: M/TQS00216 ULTRA-LOW NOISE PHASE-LOCKED DIELECTRIC RESONATOR OSCILLATOR :EATURES • • • • Ultra-low phase noise Reference from 5 to 200 MHz Internal reference available Small package Low power consumption The Phase-Locked DRO PLDRO is designed for ultralow phase noise applications. It is a dual-loop design

A14129

Abstract: A1252 A2706
Contextual Info: H Avantek Products Low Noise Surface Mount Amplifier 2000 to 6000 MHz Technical Data PPA-6213 Features Description Pin Configuration • Ultra Low Noise: 2.0 dB Typ The PPA-6213 is low current, high gain, low noise RF amplifier using HP GaAs FET technology and

dielectric resonator oscillator

Abstract: PLDRO-10-7000-5P DIELECTRIC COAXIAL RESONATOR PLDRO-13
Contextual Info: PLDRO SERIES FEATURES • • • • • Ultra-low phase noise Reference from 5 to 200 MHz Internal reference available Small package Low power consumption ULTRA-LOW NOISE PHASE-LOCKED DIELECTRIC RESONATOR OSCILLATOR The Phase-Locked DRO PLDRO is designed for ultralow phase noise applications. It is a dual-loop design

"DUAL N-Channel JFET"

Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71

PLDRO-10-7000-5P

Contextual Info: PLDRO SERIES FEATURES • • • • • Ultra-low phase noise Reference from 5 to 200 MHz Internal reference available Small package Low power consumption ULTRA-LOW NOISE PHASE-LOCKED DIELECTRIC RESONATOR OSCILLATOR The Phase-Locked DRO PLDRO is designed for ultralow phase noise applications. It is a dual-loop design

transistor 9009

Contextual Info: W h p ì HEW LETT mLïim P A C K A R D Avantek Products Ultra-Low Noise Surface Mount Amplifier 2000 to 4000 MHz Technical Data 1 PPA-4213 Description Features The PPA-4213 is low current, high gain, ultra-low noise RF amplifier using HP GaAs FET technology

2SK170

Abstract: LSK170 ultra low idss 2SK170C JFET -40v LSK170C replacement 2sk170 2SK170 TO92 LSK389 equivalent lsk170a
Contextual Info: LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to

Contextual Info: MGA-637P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-637P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the

Contextual Info: MGA-638P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-638P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the

2sk170 spice

Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
Contextual Info: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170