ULTRA LOW NOISE FET Search Results

Contextual Info: Applications • WiMAX, WCDMA, and LTE base station receivers Ultra Low Noise Amplifiers LNAs • WLAN enterprise access point receivers Select LNAs Available from Stock for Prototype or High-Volume Production • GPS receivers Skyworks Solutions offers a select group of ultra low noise, high linearity low noise

Pldro

Abstract: dielectric resonator oscillator PLDRO-10-7000-5P
Contextual Info: M/TQS00216 ULTRA-LOW NOISE PHASE-LOCKED DIELECTRIC RESONATOR OSCILLATOR :EATURES • • • • Ultra-low phase noise Reference from 5 to 200 MHz Internal reference available Small package Low power consumption The Phase-Locked DRO PLDRO is designed for ultralow phase noise applications. It is a dual-loop design

transistor 9009

Contextual Info: W h p ì HEW LETT mLïim P A C K A R D Avantek Products Ultra-Low Noise Surface Mount Amplifier 2000 to 4000 MHz Technical Data 1 PPA-4213 Description Features The PPA-4213 is low current, high gain, ultra-low noise RF amplifier using HP GaAs FET technology

2SK170

Abstract: LSK170 ultra low idss 2SK170C JFET -40v LSK170C replacement 2sk170 2SK170 TO92 LSK389 equivalent lsk170a
Contextual Info: LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to

Contextual Info: MGA-637P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-637P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the

Contextual Info: MGA-638P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-638P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Id s = 10 mA • VERY LOW NOISE FIGURE: 1.2 - — I I I I I- - FEATURES_ 0.45 dB Typical at 12 GHz

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB

02S11

Abstract: max 7176
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB

HMC465LP5E

Abstract: HMC465LP5 HMC606LC5
Contextual Info: HMC606LC5 v00.0407 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz AMPLIFIERS - SMT 5 Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

HMC606

Abstract: low noise amplifier ghz
Contextual Info: HMC606 v00.0407 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm

4G base station power amplifier

Abstract: lna 2.5 GHZ s parameter ads design FR4 dielectric constant 4.6 matching with smith chart common base amplifier circuit designing GaAs 0.15 pHEMT VT-47 Simulation of 3 phase common mode choke
Contextual Info: WHITE PAPER Ultra-Low Noise Figure, High Gain Amplifier with High Linearity Introduction Infrastructure receiver applications for cellular/3G, ISM, GPS, WiMAX/4G, automotive applications, and satellite radio require Low-Noise Amplifiers LNAs with very low Noise Figures (NF),

3521

Contextual Info: BURR-BROW N 3521 SERIES 3522 SERIES Ultra-Low Drift - FET Input OPERATIONAL AMPLIFIERS FEATURES • ULTRA-LOW DRIFT, 1MV/°C max • LOW INITIAL OFFSET VOLTAGE, 250MV, max • LOW BIAS CURRENT, IpA, max • LOW NOISE • HIGH COMMON-MODE REJECTION, 90dB, typ

Contextual Info: Ordering number: EN 836F _ 2SK222 N-Channel Junction Silicon FET Low-Noise AF Amp Applications FEATURES • Ultra low noise figure • Large lyfsl. • Low gate leakage current. ABSOLUTE MAXIM UM RATINGS/Ta = 25° C Drain-source voltage Gate-drain voltage

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOT RECOM MENDED FOR NEW DESIGN NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V , I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11.5 dB Typical at 12 GHz

2SK222

Abstract: LM 2003A LM 8361
Contextual Info: Ordering number:EN 836F _ 2 S K 2 2 2 N-Channel Junction Silicon FET SAiYO i Low-Noise AF Amp Applications FEATURES * Ultra low noise figure * Large lyfsl. • Low gate leakage current. ABSOLUTE MAXIMUM RATINGS/Ta = 25° C unit V Drain-source voltage

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10m A FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical a tf = 12 GHz

SP6203

Abstract: SP6203EM5-L-2-5 SP6205
Contextual Info: SP6203 / SP6205 300mA/500mA Low Noise CMOS LDO Regulators April 2012 Rev. 2.0.0 GENERAL DESCRIPTION APPLICATIONS The SP6203 and SP6205 are ultra low noise CMOS LDOs with very low dropout and ground current. The noise performance is achieved by means of an external bypass capacitor without

Contextual Info: B U R R -B R O W N ' [ 3521 SERIES 3522 SERIES 1 NOT RECOMMENDED FOR NEW DESIGNS Ultra-Low Drift - FET Input OPERATIONAL AMPLIFIERS FEATURES • ULTRA-LOW DRIFT. 1MV /° C max • LOW INITIAL OFFSET VOLTAGE. 25 0MV, max • LOW BIAS CURRENT, Ip A . max • LOW NOISE

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I d s = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz • Lg = 0.25 jam, W g = 200 irn

OPA2686

Contextual Info: BURR - BROWN OPA687 Wideband, Ultra-Low Noise, Voltage Feedback OPERATIONAL AMPLIFIER With Power Down FEATURES APPLICATIONS • HIGH GAIN BANDWIDTH: 3.8GHz • LOW DISTORTION ADC DRIVER • LOW INPUT VOLTAGE NOISE: 0.95nV/VHz • OC-3 FIBER OPTIC RECEIVER

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 G Hz • LG = 0.25 Jim, Wg = 200 Jim

airpax magnetic pickup

Abstract: sbos135 OP-37 siemens OPA37EZ "tunnel diode" Airpax Airpax pickup OP-07AH OPA27AJ riaa preamplifier circuit diagram
Contextual Info: OPA27 OPA37 OPA 27 OPA 27 Ultra-Low Noise Precision OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS ● LOW NOISE: 4.5nV/√Hz max at 1kHz ● PRECISION INSTRUMENTATION ● LOW OFFSET: 100µV max ● LOW DRIFT: 0.4µV/°C ● DATA ACQUISITION ● TEST EQUIPMENT

edo 6166

Abstract: edo 6166 transducer LHi 948 OPA27 OPA27FZ tunnel diode AD510 AD517 OP-07 OPA37
Contextual Info: OPA27 OPA37 Ultra-Low Noise Precision OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS LOW NOISE: 3.8nV/√Hz max at 1kHz LOW OFFSET: 25µV max LOW DRIFT: 0.6µV/°C HIGH OPEN-LOOP GAIN: 120dB min HIGH COMMON-MODE REJECTION: 114dB min ● HIGH POWER SUPPLY REJECTION: