ULTRA LOW NOISE FET Search Results
ULTRA LOW NOISE FET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CLC425A/BPA |
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CLC425 - Op Amp, Wideband, Low-Noise - Dual marked (5962-9325901MPA) |
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CLC449A/BPA |
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CLC449 - Op Amp, Ultra-Wideband, 1.2 GHZ - Dual marked (5962-9752001MPA) |
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LBUA5QJ2AB-828 | Murata Manufacturing Co Ltd | QORVO UWB MODULE | |||
LBUA5QJ2AB-828EVB | Murata Manufacturing Co Ltd | QORVO UWB MODULE EVALUATION KIT | |||
LXMSJZNCMH-225 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag |
ULTRA LOW NOISE FET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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A7628
Abstract: a1137 transistor a979 8055 transistor
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PPA-4213 PPA-4213 5963-3232E. 5963-4213E A7628 a1137 transistor a979 8055 transistor | |
MAX6126
Abstract: APP3657 MAX4475 MAX8887 ultralownoise op-amp LDO application note AN3657 up/K 3657
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MAX8887 100kHz MAX8887, MAX4475: MAX6126: com/an3657 AN3657, APP3657, Appnote3657, MAX6126 APP3657 MAX4475 ultralownoise op-amp LDO application note AN3657 up/K 3657 | |
ULTRA LOW NOISE N-CHANNEL JFET
Abstract: Zener Diode 3v 400mW jfet n channel ultra low noise jfet transistor 2n4391 ultra low igss pA LS843 spice ultra low noise NPN transistor J210 spice Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET"
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LS843 LS844 LS845 ULTRA LOW NOISE N-CHANNEL JFET Zener Diode 3v 400mW jfet n channel ultra low noise jfet transistor 2n4391 ultra low igss pA LS843 spice ultra low noise NPN transistor J210 spice Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" | |
Contextual Info: HMC606LC5 v04.0212 LOW NOISE AMPLIFIERS - SMT GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm |
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HMC606LC5 HMC606LC5 25mm2 | |
Contextual Info: HMC606LC5 v05.0514 LOW NOISE AMPLIFIERS - SMT GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm |
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HMC606LC5 HMC606LC5 25mm2 | |
mmic distributed amplifier
Abstract: HMC606LC5
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HMC606LC5 HMC606LC5 25mm2 mmic distributed amplifier | |
Contextual Info: HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm |
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HMC606 HMC606 025mm | |
117325Contextual Info: HMC606LC5 v01.0807 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - SMT 5 Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm |
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HMC606LC5 HMC606LC5 25mm2 117325 | |
mmic distributed amplifier
Abstract: HMC606
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HMC606 HMC606 025mm mmic distributed amplifier | |
mmic distributed amplifier
Abstract: V03120 HMC606LC5
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HMC606LC5 HMC606LC5 25mm2 mmic distributed amplifier V03120 | |
Contextual Info: HMC606 v01.0807 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm |
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HMC606 HMC606 025mm | |
HMC606LC5Contextual Info: HMC606LC5 v02.1207 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - SMT 4 Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm |
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HMC606LC5 HMC606LC5 25mm2 | |
HMC606Contextual Info: HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm |
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HMC606 HMC606 025mm | |
Contextual Info: HMC606 v01.0807 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm |
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HMC606 HMC606 025mm | |
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Pldro
Abstract: dielectric resonator oscillator PLDRO-10-7000-5P
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M/TQS00216 MITQS00216 Pldro dielectric resonator oscillator PLDRO-10-7000-5P | |
A14129
Abstract: A1252 A2706
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PPA-6213 PPA-6213 PP-38 5963-3232E. 5963-2593E A14129 A1252 A2706 | |
dielectric resonator oscillator
Abstract: PLDRO-10-7000-5P DIELECTRIC COAXIAL RESONATOR PLDRO-13
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D-296 dielectric resonator oscillator PLDRO-10-7000-5P DIELECTRIC COAXIAL RESONATOR PLDRO-13 | |
"DUAL N-Channel JFET"
Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
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LSK389 400mW 2SK389 "DUAL N-Channel JFET" Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A | |
PLDRO-10-7000-5PContextual Info: PLDRO SERIES FEATURES • • • • • Ultra-low phase noise Reference from 5 to 200 MHz Internal reference available Small package Low power consumption ULTRA-LOW NOISE PHASE-LOCKED DIELECTRIC RESONATOR OSCILLATOR The Phase-Locked DRO PLDRO is designed for ultralow phase noise applications. It is a dual-loop design |
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D-296 PLDRO-10-7000-5P | |
transistor 9009Contextual Info: W h p ì HEW LETT mLïim P A C K A R D Avantek Products Ultra-Low Noise Surface Mount Amplifier 2000 to 4000 MHz Technical Data 1 PPA-4213 Description Features The PPA-4213 is low current, high gain, ultra-low noise RF amplifier using HP GaAs FET technology |
OCR Scan |
PPA-4213 PPA-4213 wei46 transistor 9009 | |
2SK170
Abstract: LSK170 ultra low idss 2SK170C JFET -40v LSK170C replacement 2sk170 2SK170 TO92 LSK389 equivalent lsk170a
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LSK170 2SK170 ultra low idss 2SK170C JFET -40v LSK170C replacement 2sk170 2SK170 TO92 LSK389 equivalent lsk170a | |
Contextual Info: MGA-637P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-637P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the |
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MGA-637P8 MGA-637P8 CDMA2000x) AV02-2992EN | |
Contextual Info: MGA-638P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-638P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the |
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MGA-638P8 MGA-638P8 CDMA2000x) AV02-2993EN | |
2sk170 spice
Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
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LSK170 LSK389 400mW -500pA 2SK170 OT-23 2sk170 spice j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6 |