ULTRA LINEARITY RF TRANSISTOR Search Results

0* dbm sot343

Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION The START450 is a member of the START family that provide the state of the art of RF silicon process to the

ic 0744

Abstract: sot343
Contextual Info: START450 NPN Silicon RF Transistor PRELIMINARY DATA • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION The START450 is a member of the START family that

BF 295

Abstract: C785 transistor BF295 START450 START450TR 31E12 nh TRANSISTOR SPICE PARAMETER, STMicroelectronics, bipolar transistor transistor C740
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

BF295

Abstract: c785 C785 transistor BF 295 transistor BF 451 START450 START450TR transistor C740
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

C785 transistor

Abstract: transistor C740 BF 245 B simulation model BF 245 A spice transistor c785
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

BF 295

Abstract: transistor c785 C785 transistor transistor 139 BF NE 545 500MHz-5GHz ic 747 BF 245 B simulation model sot343 699 START450
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

MRF947T1 TRANSISTOR

Abstract: motorola transistor 7439 8427 transistor Motorola 4718 TA 7176 IC 7814 transistor AN 7373 5812 MOTOROLA 2114 LC IC 7464 circuit
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F947T1 M RF947BT1 The RF Line NPN Silicon RF P o w er Tran sisto r D esigned fo r use in high gain, low noise s m a ll-sig n a l a m plifiers. This transistor features excellent broadband linearity, in an ultra-small surface mount

START450

Contextual Info: START450 NPN Silicon RF Transistor TARGET DATA • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • MAXIMUM STABLE GAIN Gms=14dB @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION The START450 is a member of the START family that

HMC356LP3

Abstract: radar 77 ghz sige SC 2272 HMC373 HMC493LP3 2.5 ghz lna transistor HMC476MP86 HMC479MP86 HMC377QS16G HMC454ST89
Contextual Info: OFF-THE-SHELF AUTUMN 2003 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE SiGe GAIN BLOCKS NOW OFFERED! INSIDE. High Linearity Low Cost “Micro-X” MMIC Amplifiers to 6 GHz * 20 NEW PRODUCTS RELEASED! Product Showcase Ultra Wideband Driver Amp HMC464

CA24

Abstract: SMA24
Contextual Info: A24 / SMA24 Cascadable Amplifier 5 to 1500 MHz Rev. V3 Features Product Image • HIGH GAIN - TWO STAGES: 20.0 dB TYP. • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <± 2.5O, 100-1500 MHz • LOW VSWR:<1.4:1 (TYP.) Description The A24 RF amplifier is a discrete hybrid design, which uses

CA24

Abstract: SMA24
Contextual Info: Cascadable Amplifier 5 to 1500 MHz A24/ SMA24 V3 Features Product Image • HIGH GAIN - TWO STAGES: 20.0 dB TYP. • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <± 2.5O, 100-1500 MHz • LOW VSWR:<1.4:1 (TYP.) Description The A24 RF amplifier is a discrete hybrid design, which uses

Contextual Info: A24 / SMA24 Cascadable Amplifier 5 to 1500 MHz Rev. V3 Features Product Image • HIGH GAIN - TWO STAGES: 20.0 dB TYP. • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <± 2.5O, 100-1500 MHz • LOW VSWR:<1.4:1 (TYP.) Description The A24 RF amplifier is a discrete hybrid design, which uses

Contextual Info: Cascadable Amplifier 10 to 1200 MHz A64/ SMA64 V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • HIGH GAIN - TWO STAGES: 26 dB (TYP.) • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2O, 100-1000 MHz • LOW VSWR: 1.2:1 (TYP.) Description The A64 RF amplifier is a discrete hybrid design, which uses

TRANSISTOR A64

Abstract: a64 TRANSISTOR SMA64 CA64
Contextual Info: A64 / SMA64 Cascadable Amplifier 10 to 1200 MHz Rev. V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • HIGH GAIN - TWO STAGES: 26 dB (TYP.) • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2O, 100-1000 MHz • LOW VSWR: 1.2:1 (TYP.) Description The A64 RF amplifier is a discrete hybrid design, which uses

wifi 5 watt amplifier circuit

Abstract: MGA-30489 MGA-30689 30689 ALM-1812 VMMK-1225 ACPM 5040 ACMD-7402 mga-62563 ALM-80110
Contextual Info: Wireless Semiconductor Solutions for RF and Microwave Communications Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect Avago Technologies Wireless Semiconductor Solutions for RF and Microwave Communications Accelerating Progress in

HSCH-9401

Abstract: e-phemt HMPS-282x downconvertor MGA-85563 MGA-87563 OC-768 MGA-52543 Agilent RF amp MGA-545P8
Contextual Info: Agilent Wireless Semiconductor Solutions for RF and Microwave Communications Semiconductor Solutions for the Connected World www.agilent.com/view/rf Agilent is Accelerating Progress in Wireless Communications. Mobile communications continue to grow in size and importance.

Contextual Info: Skyworks New and Featured Products David Seed Shuping Zhang MTTS 2014 Skyworks Solutions, Inc. Proprietary and Confidential Information Information 1 Skyworks At A Glance Skyworks Solutions is a Vertically Integrated provided of High Performance Analog and Mixed Signal Semiconductors Enabling Mobile Connectivity

LNA ku-band

Contextual Info: BFR840L3RHESD Robust ultra low noise SiGe:C Bipolar RF Transistor in very small thin package Data Sheet Revision 1.0, 2012-04-19 RF & Protection Devices Edition 2012-04-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG

DECT telephone schematic

Abstract: LP3J toko FM if transformers murata frequency mixer gsm high frequency mixer Active Double Balanced Mixer DECT siemens
Contextual Info: M MOTOROLA 1 - - - - "• MCI 3143 Advance Information Ultra Low Power DC 2.4 GHz Linear Mixer The MC13143 is a high compression linear mixer with single-ended RF input, differential IF output and differential LO inputs which consumes as little as 1.8 mW. A new circuit topology is used to achieve a high third order

celeritek LNA

Abstract: microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS CDQ0303-QS-0G00 Coil Craft 104
Contextual Info: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz

Contextual Info: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz

CDQ0303-QS

Abstract: CDQ0303-QS-0G00 CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0
Contextual Info: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS October 2007 - Rev 22-Oct-07 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain:

Transistor W03

Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor
Contextual Info: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high

Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity

Abstract: varactor
Contextual Info: Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity Cong Huang1, Koen Buisman1, Peter J. Zampardi2, Lis K. Nanver1, Lawrence E. Larson3 and Leo C. N. de Vreede1 1 Delft Institute of Microsystems and Nanoelectronics DIMES , Delft University of Technology,