UJ DIODE MARKING Search Results

AX057

Abstract: marking code 9d D1NL4 DATE CODE FOR NITM MU diode MARKING CODE l4 marking code diode
Contextual Info: Super Fast Recovery Diode Axial Diode Wtm D1 NL40 OUTLINE U nit-m m Package : AX057 W eight 0.19g Typ 400V 0.9A UJ Feature •ms'ix • Low Noise • trr= 5 0 n s • trr=50ns 02.6 -M - 0> Main Use • Switching Regulator • ÍM .0AJM 3 Marking Spec Code

DIODE marking s6 code

Abstract: DIODE marking TY
Contextual Info: Schottky Barrier Diode Axial Diode Wtm D1NS6 OUTLINE Package : AX057 Unit-mm Weight 0.19g Typ 60 V 1A Feature UJ 02.6 • Tj=150°C • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E • P r r s m Rating • Switching Regulator • DC/DC nyjt- l? • m

marking 9D

Abstract: D1NL40U AX057 ITT diode marking code 9d diode MARKING CODE 3J
Contextual Info: Super Fast Recovery Diode Axial Diode •fttg H Package D1NL40U OUTLINE AX057 * I 400V 0.9A 2 UJ Feature 2.6 </> • Low Noise • trr=25ns • trr=25ns *2 G> Main Use • Z'l • • • • • O A , 8? • jS fl.F A Unit • mm W eight 0. 19k T y p Switching Regulator

marking 2U diode

Abstract: marking 2U 20 diode diode marking code 2U diode marking 2U marking code DIODE 2U diode 2u marking code marking 2U 40 diode 2U marking code diode
Contextual Info: Super Fast Recovery Diode Axial Diode W tm D1NL20U OUTLINE Package : AX057 U nit-m m W eight 0.19g Typ 200V 1A Feature UJ 02.6 • Low Noise • m s 'ix • trr= 3 5 n s • trr=35ns 0> -M - Main Use • Fly Wheel • ÍM .0 A J M 3 • Home A ppliance, Office Autom ation, Lighting

j172

Abstract: D1NJ10 AX057
Contextual Info: Schottky Barrier Diode Axial Diode W D 1 N J 10 t m O U T L IN E Package : AX057 unit:mm W eight 0.19g Typ t— in o *1 100V 1A 3- Feature UJ • Tj=150°C • Tj=150°C * 2 • f i l R = 0 .1 m A • Low lR=0.1mA • Resistance for thermal run-away (!>

D1NK60

Abstract: AX057 diode MARKING CODE K6 WMM marking code
Contextual Info: Super Fast Recovery Diode Axial Diode Wtm OUTLINE Package : AX057 D1NK60 U n it-m m W e ig h t 0 .1 9 g T y p 600V 0.8A UJ Feature 02.6 • High Voltage Super FRD • H lf f iF R D • trr=75ns • ® V f=1.3V • trr=75ns • Low V f=1 ,3V 0> Main Use

diode marking f6

Contextual Info: Super Fast Recovery Diode Axial Diode Wtm D1NF60 OUTLINE U nit-m m W eight 0.19g Typ Package : AX057 600V 0.8A UJ Feature • H lff iF R D • H igh V o lta g e S u p e r FRD • ñ S 'f X • trr = 4 0 0 n s • L o w N oise 02.6 • trr= 4 0 0 n s -M -

D1NK60

Abstract: AX057 0251K
Contextual Info: Super Fast Recovery Diode Axial Diode OUTLINE Package I AX057 D1NK60 ♦ 1 6 0 0 V 0 .8 A i UJ Feature • íiü íE F R D • trr=75ns • V f=1.3V U n it : m m W e ig h t 0 .1 9 k T y p 02.6 • High Voltage Super FRD *2 • trr=75ns • Low V f=1 .3V

Contextual Info: Schottky Barrier Diode Axial Diode W tm D1NS4 OUTLINE U n it-m m Package : AX057 W e ig h t 0 .1 9 g T y p *i 4 0 V 1A Feature UJ 02.6 • Tj=150°C • T j=150°C • P r r s m T ’A ' ^ V ì ' I ' K ì E • P r r s m Rating 11)=- Main Use • Sw itching Regulator

Contextual Info: Diode, Schottky barrier, leaded RB100A Dimensions U n its : mm These cylindrical mold-type diodes are suitable for lead mounting on printed circuit boards. CATHODE BAND Features =H-fl <£0 . 6 ± 0, 1 • available in MSR package • part marking, see following table

GW40V60DF

Contextual Info: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution

GENERAL SEMICONDUCTOR MARKING UJ

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2836 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE (COMMON ANODE) DESCRIPTION Mitsubishi MC2836 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING «m m type double diode,especially designed for high speed switching application.

Contextual Info: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V

GW60H65DFB

Contextual Info: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V

Contextual Info: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off 2 3 1 3 2 1 TO-247 • Low saturation voltage: VCE sat = 1.8 V (typ.)

fairchild 1P

Contextual Info: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.

Contextual Info: r — SB D Anode common 20A 120VTjw150V FRHS20A12 Fully Molded similar to TO-22QAB ttfl* 0 * ^ Nihon Inter Electronics Corporation Specification mm Construction ' > 3 -y h y T jfs f Schottky Barrier Diode K m Application High Frequency Rectification MAXIMUM RATINGS T a = 25'C: Unless otherwise specified

Contextual Info: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Very high speed switching series • Tail-less switching off 2 3 3 1 2 1 • Low saturation voltage: VCE sat = 1.8 V (typ.)

Contextual Info: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V

Contextual Info: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V

Contextual Info: STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V

GWT30V60DF

Abstract: GW30V60DF
Contextual Info: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 600 V, 30 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 3 1 1 D²PAK TO-220

Contextual Info: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 1 1 D²PAK TO-220

Contextual Info: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution