UJ 78A Search Results

siemens igbt

Contextual Info: SIEMENS BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate BSM 50 GAL 120 DN2 UJ Ï? Type 1c 1200V 78A Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70

drum machine sound ic

Abstract: m6388 xk 22e E2D5050-27-50 drum sound ic 7737C 6B6g WCT - A24 birthday
Contextual Info: E2D5050-27-50 O K I Semiconductor_ GENERAL-PURPOSE ROM CODE LIBRARY Built-in m ask R O M voice synthesis IC s and serial voice RO M s are m anufactured according to custom er orders. The follow ing standard products are also available fo r general use and for sound

Contextual Info: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses

Contextual Info: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

IRG7PH42UD1PBF

Abstract: IRG7PH42UD1-EP 60A12 IRG7PH42U irg7ph42ud IRG7PH42UD1 irgp30b120 irg7ph42 igbt 600V 30A
Contextual Info: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses

irg7ph42upbf

Abstract: marking code 5339
Contextual Info: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

IRG7PH42UD1-EP

Abstract: IRG7PH42UD1PbF induction heating Circuit P channel 600v 30a IGBT 035H C-150 IRFPE30 IRGP30B120KD-E 6 pulse IGBT single line drawing 600v 30a IGBT
Contextual Info: PD - 97480 IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA

IRG7PH42UD1M

Abstract: 30A, 600v RECTIFIER DIODE
Contextual Info: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

IRG7PH42U

Contextual Info: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

IRG7PH42U

Contextual Info: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

Contextual Info: IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • VCES = 1200V C Low VCE ON trench IGBT technology Low switching losses

IRG7PH42U

Contextual Info: IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

KL SN 102 94v-0

Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Contextual Info: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results

P65a

Contextual Info: 3KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE- 5 . 0 to 170 Volts 3000 Watt Peak Pulse Power P -6 0 0 FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 9 4 V -0 • Glass passivated junction • 3000W Peak Pulse Power

Contextual Info: MITSUBISHI SOUND PROCESSORS M51598FP PREAMPLIFIER FOR OPTICAL PICKUP DESCRIPTION The M51598FP is an optical pickup preamplifier for compact PIN CONFIGURATION TOP VIEW disc players. It consist of 5 l-V amplifier which convert amplifier, FE (focus error) amplifier, TE (tracking error)

48C24

Abstract: f4737 bfe 9ca 3C44C 34h737 S42B BA3442
Contextual Info: 123456 12345267621842897A5BC9DDB5 7EF37B3B57D91DB57217FDA627CB135B67 7898ABCDD9A EDFD8A 7D9F D89D 123 4 56789A 4 BC4 D3ECFC4E3454 6E3 4 7F3CCF4 3BE 4 FEC34 33FEBC 4 123 4 5678 9A4BC43CBE34F4F34 E3 4 C3324

diode U1J

Abstract: NE83Q92 NE83Q92A NE83Q92D NE83Q92N NE83Q93
Contextual Info: Philips Semiconductors Data Communications Products " • bbS3=124 o c m b f l l 31fl ■ SIC3 Preliminary specification “ ■— ■■■ m m m m m m w— mmm Low-power coaxial Ethernet transceiver NE83Q92 DESCRIPTION FEATURES The NE83Q92 is a low power coaxial

Contextual Info: CD22M3493 HARRIS S E M I C O N D U C T O R 1 2 x 8 x 1 BiMOS-E Crosspoint Switch July 1994 Description Features 96 Analog Switches Low R on Guaranteed Ron Matching Analog Signal Input Voltage Equal to the Supply Voltage W ide Operating Voltage. 4V to 16V

AUFP4004

Contextual Info: PD - 96407 AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

AUFP4004

Contextual Info: PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

AUFS3004

Contextual Info: PD - 96400 AUTOMOTIVE GRADE AUIRFS3004 AUIRFSL3004 Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

AUFP4004

Abstract: 3110 0001 mosfet AUIRFP4004 AN-994 TO-247AC
Contextual Info: PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

marking code 117A

Contextual Info: PD - 97716 AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features ● ● ● ● ● ● ● ● VDSS 40V RDS on typ. 1.4mΩ max. 1.7mΩ ID (Silicon Limited) 343A ID (Package Limited) 195A D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

AUIRLS3034

Abstract: marking code 117A AEC-Q1010
Contextual Info: PD - 97716A AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features ● ● ● ● ● ● ● ● VDSS 40V RDS on typ. 1.4m max. 1.7m ID (Silicon Limited) 343A ID (Package Limited) 195A D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating