UJ 45A DIODE Search Results

Contextual Info: APT45GR65B2DU30 APT45GR65B2DU30 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between

Contextual Info: APT45GR65B_S APT45GR65B APT45GR65S 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and

Contextual Info: APT45GR65B_SSCD10 APT45GR65BSCD10 APT45GR65SSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and

Contextual Info: APT45GR65B APT45GR65B 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses.

GFM 74 A

Contextual Info: POQJEREX m Ê / ISE INC B W D m 7 5 ^ 5 1 00Q3SM3 & U CE420430 CE420830 K Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Three-Phase SCR/Diode

Contextual Info: APT45GR65BSCD10 APT45GR65BSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and

Contextual Info: interrii RFP45N06LE, RF1S45N06LESM D ata S h e e t 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes

655E-6

Abstract: fp45n ppm pspice 136E3 518E-7
Contextual Info: H A R R RFG45N06 RFP45N06 I S S E M I C O N D U C T O R January 1994 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging JEDEC TO-220AB TOP VIEW • 45A,60V • rDS(ON) ~ 0.028U • Temperature Compensating PSPICE Model

Contextual Info: TO SHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.9 MAX. • • • • 0 3 .2 1 0 .2

Contextual Info: H A F R F R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM IS s e m i c o n d u c t o r 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Description • 45A, 60V • UIS Rating Curve The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and

2SK1653

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1653 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType l?-7t-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

Contextual Info: Preliminary Technical Information IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = 150V 90A Ω 20mΩ RDS on ≤ TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

IXTA90N15T

Abstract: IXTP90N15T 90N15T IXTH90N15T
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T N-Channel Enhancement Mode Avalanche Rated = = 150V 90A Ω 20mΩ RDS on ≤ TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

e50c

Abstract: D425
Contextual Info: IXYS DSS 25-0035/45A Power Schottky Rectifier ^FAV V rrm Vp 25 A 35 - 45 V 0.59 V Preliminary Data v RSM Type V RRM V V 35 45 35 45 o \ A -" DSS 25-0035A DSS 25-0045A I C (TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Urms ^FAV Tc = 155°C; rectangular, d = 0.5

2SK1653

Abstract: K1653
Contextual Info: TOSHIBA 2SK1653 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 653 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. 10 ±0.3 $53.2 ± 0.2

OA7 diode

Abstract: AL 1450 DV
Contextual Info: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER I« R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR 60 Volt, 0.017 Ohm HEXFET IRFV064 Product Summary Part Number The HEXFET® technology is the key to International Rectifier's advanced line of power M O S FE T transistors.

Contextual Info: J W S S em icon du cto r RFG45N06LE, RFP45N06LE, RF1S45N06LESM I Data Sheet April 1999 45A, 60V, 0.028 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs • 45A, 60V Formerly developmental type TA49177. • rDS ON = 0.028i2 • 2kV ESD Protected • Temperature Compensating PSPICE Model

IRG7PH42U

Contextual Info: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

IRG7PH42UD1M

Abstract: 30A, 600v RECTIFIER DIODE
Contextual Info: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

IRG7PH42U

Contextual Info: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

76437s

Contextual Info: HUF76437P3, HUF76437S3S in te fs il D a ta S h e e t N o v e m b e r 1999 4 7 0 9 .2 Uttrak0 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging F ile N u m b e r Features JE D E C T O -220A B JE D E C TO -263A B • Ultra Low On-Resistance

IRG7PH42U

Contextual Info: IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

T0-262AA

Contextual Info: HAFRRIS S E M I C O N D U C T O R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Description • 45A,60V The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and

FDH45N50F

Contextual Info: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.