UHF SCHOTTKY DIODE Search Results

diodes ir10

Abstract: ir10 diode MicroMetrics SCHOTTKY DIODES ir10 Logic Gates "Schottky Diodes" MGR700
Contextual Info: Schottky Diodes Schottky Diodes: MGR 700 Series General Purpose Schottky Diodes Description The MicroMetrics MGR 700 series are general purpose Schottky Barrier diodes specially designed to achieve a high voltage breakdown. This series of diodes can be used in the UHF and

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

diode 349A

Abstract: S1 DIODE schottky S11 SCHOTTKY diode MMBD110T1 MMDL101T1 mmbd110
Contextual Info: Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MMDL101T1 1.0 pF SCHOTTKY BARRIER DIODE • Very Low Capacitance — Less than 1.0 pF @ Zero Volts

MMDL770T1G

Abstract: MMBD770T1 marking code 5H diode
Contextual Info: MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features •     http://onsemi.com

Contextual Info: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE ● Large conversion gain GC and optimum for UHF mixer ● S-Mini package, enabling down-sizing of the equipment and auto- 1 2 1.7±0.1 0.4±0.15

Contextual Info: MOTOROLA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA MMBD110T1 MMBD330T1 MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF

schottky diode marking A7

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planer type Unit : mm For UHF mixer 1.60±0.05 • Features (0.2) Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● SS-Mini package, enabling down-sizing of the equipment and auto-

diode 349A

Abstract: mmbd110 20 GHz schottky diode
Contextual Info: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Very Low Capacitance — Less than 1.0 pF @ Zero Volts

diode 349A

Abstract: 20 GHz schottky diode nf amplifier low voltage UHF schottky diode
Contextual Info: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Very Low Capacitance — Less than 1.0 pF @ Zero Volts

Contextual Info: MMDL770T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • • • • • • Extremely Low Minority Carrier Lifetime

MMBD110T1

Abstract: MMDL101T1G noise diode 5M MARKING CODE SCHOTTKY DIODE
Contextual Info: MMDL101T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • Very Low Capacitance − Less than 1.0 pF @ 0 V

marking code 5H diode

Abstract: rf marking CODE 5h
Contextual Info: MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • • • • • Extremely Low Minority Carrier Lifetime

Contextual Info: MMDL770T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • • • • • • Extremely Low Minority Carrier Lifetime

diode 5082-2800

Abstract: diode 5082-2800 datasheet UHF/VHF
Contextual Info: 5082-2800 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2800 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 35 mA V 70 V PDISS

S4 DIODE schottky

Abstract: DIODE marking S4 45 S4 55 DIODE schottky 5H MARKING DIODE marking S4 57 S4 Schottky MMBD770T1 MMDL770T1 2s423 DIODE S4 Schottky SOD-323
Contextual Info: Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V

5082-2810

Abstract: UHF/VHF
Contextual Info: 5082-2810 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2810 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 35 mA V 20 V PDISS

2303

Abstract: UHF/VHF small signal schottky diode
Contextual Info: 5082-2303 SCHOTTKY BARRIER DIODE PACKAGE STYLE DO-35 DESCRIPTION: The ASI 5082-2303 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS IF 35 mA VR 20 V PDISS

5082-2811

Abstract: UHF/VHF
Contextual Info: 5082-2811 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2811 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 20 mA V 15 V PDISS

MA733

Contextual Info: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE ● Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer M Di ain sc te on na tin nc ue e/ d 1 2 +0.1 1.7±0.1 0.4±0.15

UHF/VHF

Abstract: mavr20
Contextual Info: 5082-2900 SCHOTTKY BARRIER DIODE PACKAGE STYLE 15 DESCRIPTION: The ASI 5082-2900 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS IF 35 mA VR 20 V PDISS 100 mW @ TA = 25 °C

marking 28 SOT323 uhf

Abstract: t 04 80
Contextual Info: MMBD330T1, MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT−323/SC−70 package which is designed for low−power surface

MMBD330T1

Abstract: MMBD330T1G MMBD770T1 MMBD770T1G SC-70 G.2
Contextual Info: MMBD330T1G, MMBD770T1G Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high- efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT- 323/SC- 70 package which is designed for low- power surface

Contextual Info: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for

Contextual Info: MMBD330T1, MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface