UHF FET Search Results

3SK80

Contextual Info: 3SK80 MOS F ET SILICON N Ç HANNEL DUAL GATE MOS FET UHF AMPLIFIER UHF T V TUNER R F AMPLIFIER UHF a « * « « « UHF T V * * - * * « * * « * t. * - n c m i I r - »1 Cm > j r *> : otm «. / • * W t« 'P h w i— i • - la mm I H*t» —< > j,-n

Motorola UHF Power Amplifier Module

Abstract: motorola power fet rf MHW2820-1 MHW2820 MOTOROLA RF MODULE Motorola 406 W806 motorola rf power module
Contextual Info: Order this document by MHW2820/D MHW2820-1 Advance Information UHF Silicon FET Power Amplifier UHF POWER AMPLIFIER 20 W, 806 to 870 MHz This device is designed for 12.5 V UHF power amplifier applications in industrial and commerical FM equipment operating from 806 to 870 MHz.

MHW2820-1

Abstract: MHW2820 motorola rf power module
Contextual Info: Order this document by MHW2820/D M O TO R O LA Advance Information UHF Silicon FET Power A m plifier This device is designed for 12.5 V UHF power amplifier applications in industrial and commerical FM equipm ent operating from 806 to 870 MHz. UHF POWER AMPLIFIER

Contextual Info: HA21001MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package UHF RF input VHF RF input 2 1 18 AC GND2 AC GND1

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

PCB antenna 868MHZ

Abstract: KVP 79 A 433 mhz UHF RECEIVER, pcb layout and Schematic Di
Contextual Info: OL2381 Integrated UHF Transceiver Rev 1.3 Oct 2010 NXP Semiconductors Specification 1.3 Integrated UHF Transceiver CONTENTS 1 General Information . 6

MHW2707A1

Abstract: Motorola UHF Power Amplifier Module 555 motorola bsc 25 01 n MOTOROLA RF MODULE 301AL motorola rf power module
Contextual Info: MOTOROLA Order this document by MHW2707A/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Silicon FET Power Amplifier MHW2707A1 Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios.

MHW2727

Abstract: Amplifier Modules motorola MHW2727-3 sps 1951 Motorola UHF Power Amplifier Module
Contextual Info: MOTOROLA Order this document by MHW2727/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Silicon FET Power Amplifiers MHW2727-3 Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios.

BF980

Abstract: BF980A
Contextual Info: BF980A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.

Dual-Gate Mosfet

Contextual Info: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF997 PINNING APPLICATIONS • UHF and VHF applications such as UHF/VHF television tuners and professional communications equipment. • Especially intended for use in pre-amplifiers in CATV

Motorola UHF Power Amplifier Module

Abstract: MHW2805-1 MHW2805-2 420AB
Contextual Info: Order this document by MHW2805/D MHW2805-1 MHW2805-2 Advance Information UHF Silicon FET Power Amplifiers Designed for 7.5 V UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • Specified 7.5 V Characteristics:

MHW2707-1

Abstract: motorola rf power module Motorola UHF Power Amplifier Module
Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MHW27071D The RF Line o UHF Silicori FET Power Amplifier Designed for 7.5 volt UHF power amplifier applications commercial equipment primarily for hand portable radios. in industrial ● Specified 7.5 Volt Characteristics:

MHW2805-1

Abstract: MHW2805-2 Motorola UHF Power Amplifier Module
Contextual Info: Order this document by MHW2805/D MHW2805-1 MHW2805-2 ARCHIVE INFORMATION UHF Silicon FET Power Amplifiers Designed for 7.5 V UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • Specified 7.5 V Characteristics:

Motorola UHF Power Amplifier Module

Abstract: UHF amplifier schematic diagram
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Silicon FET Power Amplifier Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • • • • • • Specified 7.5 Volt Characteristics:

MHW2821-1

Abstract: MHW2821 MHW2821-2
Contextual Info: MOTOROLA Order this document by MHW2821/D SEMICONDUCTOR TECHNICAL DATA MHW2821-1 MHW2821-2 The RF Line UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz.

MHW2707-1

Abstract: Motorola UHF Power Amplifier Module 555 motorola mhw2707 301AL
Contextual Info: MOTOROLA Order this document by MHW2707/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Silicon FET Power Amplifier MHW2707-1 Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • Specified 7.5 Volt Characteristics:

Contextual Info: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.

mhw 602

Abstract: MHW2B21-1
Contextual Info: MOTOROLA Order this document by MHW2821/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW2821-1 MHW2821-2 UHF Silicon FET Power Am plifiers Designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz.

motorola MHW

Contextual Info: MOTOROLA Order this document by MHW2707/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Silicon FET Power A m plifiers Designed for 7.5 volt UHF power am plifier applications in industrial and commercial equipm ent primarily for hand portable radios. • •

SGM2016AM

Abstract: SGM2016AP dual-gate
Contextual Info: SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,

dual-gate

Contextual Info: Short-form product specification Philips Sem iconductors Silicon N-channel dual-gate MOS-FET BF980A APPLICATIONS • UHF applications such as UHF television tuners with 12 V supply voltage and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package

Contextual Info: O K I electronic components KGF1322S Power FET for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1322S, housed in an SMD-type ceramic package, is a discrete UHF-band power FET that features high efficiency, high output power, and low current dissipation. The KGF1322S

MHW2821-1

Abstract: 81 210 W 20 MHW2821 MHW2821-2 Motorola UHF Power Amplifier Module motorola application note amplifier power
Contextual Info: Order this document by MHW2821/D MHW2821-1 MHW2821-2 UHF Silicon FET Power Amplifiers Designed for 12.5 V UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz. • Specified 12.5 V Characteristics: RF Input Power: ≤250 mW MHW2821–1

Contextual Info: O K I electronic components KGF1322_ Power FET for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1322, housed in a ceramic package with integrated heat sink, is a discrete UHF-band power FET that features high efficiency, high output power, and low current dissipation. The