UHC MOS Search Results

disadvantages of resistor

Abstract: Undershoot FSTU32160 FSTU32160A FSTU3257 FSTU3384 FSTU6800 FSTUD16211 undershoot voltage spikes
Contextual Info: Product Information from Fairchild Semiconductor For more information, visit us at www.fairchildsemi.com Rev. October, 2000 FAIRCHILD’S UNDERSHOOT-PROTECTED SWITCHES Fairchild Switch Applications An Undershoot Event Transient On An or Bn Ground Potential Data Corruption on the Isolated Bus

preventing DC voltage spikes

Abstract: Bus Switches AN-5021 FSTU32160 can bus voltage CAN BUS CIRCUIT undershoot voltage spikes
Contextual Info: Fairchild Semiconductor Application Note October 2000 Revised October 2000 Bus Switch Undershoot Protection: Which Systems Need this Protection and Why Bus switches have become commonplace in may system applications. Bus switches are used for bus isolation, bus

Bus Switches

Abstract: AN-5021 FSTU32160
Contextual Info: Fairchild Semiconductor Application Note October 2000 Revised October 2006 Bus Switch Undershoot Protection: Which Systems Need this Protection and Why Bus switches have become commonplace in may system applications. Bus switches are used for bus isolation, bus

NC7SZ74

Abstract: 16862 FSTU16211 FSTU162211 FSTU162450 FSTU16345 FSTU16861 FSTU3125 FSTU32160 FSTU32160A
Contextual Info: Fairchild Interface & Logic Notebook Solutions Superior Performance Solutions Low Voltage Logic Switches TinyLogic Optoelectronics Smaller Packaging Solutions MicroPak™ Ball Grid Array BGA Analog Discrete Interface & Logic Applications Docking station bus switch isolation

IN 5008 DIODE

Abstract: AN-5008 nmos transistor FSTU6800 Fairchild Bipolar Transistor High Beta
Contextual Info: Fairchild Semiconductor Application Note March 1999 Revised October 2006 FSTU - Undershoot Protected Fairchild Switch Family Introduction Fairchild Switch FST Bus Switch products have become powerful tools in the modern personal computer as well as increasing in popularity in telecommunications and data

ttl cmos advantages disadvantages

Abstract: 74VCXF162835 FMS7857 FSTU16450 FSTU32160 FSTU3257 FSTU3384 FSTU6800 FSTUD16211 PC133 registered reference design
Contextual Info: Interface & Logic Fairchild Server Solutions Superior Performance Solutions: Bus Switches GTLP Interface Low-Voltage Logic DIMM Support Smaller Packaging Solutions: TinyLogic Ball Grid Array BGA Applications: Live Insertion For PCI and PCIx Bus and Backplanes

IN 5008 DIODE

Abstract: AN-5008 FSTU6800
Contextual Info: Fairchild Semiconductor Application Note March 1999 Revised December 2000 FSTU - Undershoot Protected Fairchild Switch Family Introduction Fairchild Switch FST Bus Switch products have become powerful tools in the modern personal computer as well as increasing in popularity in telecommunications and data

FDS4070N7

Contextual Info: FDS4070N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

U420B

Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
Contextual Info: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary

CBVK741B019

Abstract: F63TNR FDC6305N FDC633N
Contextual Info: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and

Contextual Info: Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V  Fast Switching Times RDS on = 5.0 !  Improved Inductive Ruggedness  Lower Input Capacitance ID = 200 mA  Extended Safe Operating Area  Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain

7121

Abstract: 2N7000TA MOSFET 7121
Contextual Info: Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS on = 5.0 Ω n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92

MOSFET 7121

Abstract: 2N7000BU
Contextual Info: Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS on = 5.0 Ω n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92

Contextual Info: FDW2501N Dual N-Channel 2.5V Specified PowerTrench ™ MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

2N7002

Abstract: 2N7002MTF Small Signal MOSFET
Contextual Info: 2N7002MTF N-Channel Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS on RDS(on) = 5.0 Ω ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability

SCHEMATIC POWER SUPPLY WITH IGBTS

Abstract: AN-7508 RUR860 fairchild flyback design 7508 230vac to 30vdc transformer 3kw inverter ac to dc inverter 3kw schematic GS601 SP601
Contextual Info: HVIC/IGBT Half-Bridge Converter Evaluation Circuit Application Note May 1992 AN-7508 Author: George Danz Title N91 bt VIC BT lfdge nter aluon t utho The HVIC high voltage integrated circuit is designed to drive n-channel IGBTs or MOSFETs in a half-bridge configuration

2N7002MTF

Abstract: 2N7002 Small Signal MOSFET
Contextual Info: 2N7002MTF Advanced Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS on RDS(on) = 5.0 Ω ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability

SSS7N60B

Abstract: SSS7N60B equivalent SSP7N60B 28A-600
Contextual Info: SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Fairchild MOSFET TSSOP-8 dual n-channel

Contextual Info: FDW2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

2503n fairchild

Contextual Info: FDW2503N Dual N-Channel 2.5V Specified PowerTrench ™ MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: 2N7002MTF N-Channel Small Signal MOSFET FEATURES BVDSS = 60 V  Lower RDS on RDS(on) = 5.0 Ω  Improved Inductive Ruggedness  Fast Switching Times ID = 200 mA  Lower Input Capacitance  Extended Safe Operating Area SOT-23  Improved High Temperature Reliability

FDC633

Abstract: CBVK741B019 F63TNR FDC633N FDC638P SOIC-16
Contextual Info: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

LCD TV SMPS circuit

Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
Contextual Info: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient