Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UGF19090P Search Results

    UGF19090P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UGF19090P
    		Cree FET Transistor, 90W, 1.9GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 43.4KB 3

    UGF19090P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MRF19090

    Abstract: UGF19090 UGF19090F UGF19090P
    Contextual Info: UGF19090 90W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 90W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		UGF19090 MRF19090 CDMA2000: UGF19090F MRF19090 UGF19090 UGF19090F UGF19090P PDF

    potentiometer 1k ohm

    Abstract: ZENER 26v potentiometer 1k Cree Microwave mono mosfet amplifier diagram UGF19090 UGF19090F UGF19090P 01UF 10UF
    Contextual Info: UGF19090 90W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 90W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		UGF19090 UGF19090F IS-97) IS-97 UGF19090 potentiometer 1k ohm ZENER 26v potentiometer 1k Cree Microwave mono mosfet amplifier diagram UGF19090F UGF19090P 01UF 10UF PDF