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    ufnd110

    Abstract: ufnd112
    Contextual Info: POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • For A utom atic Insertion • C ompact, End Stackable • Fast Sw itching • Low Drive Current • Easily Paralleled • No Second Breakdown • Excellent Tem perature S tability DESCRIPTION


    OCR Scan     		ufnd110ufnd113ufnd112 PDF

    UFN540

    Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
    Contextual Info: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist­ ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State


    OCR Scan     		u2ta506u2ta508u2ta510861-6s40+10ufn540ufn833upt613ufnf130ufn451u2t105u2t305tq-66ufn432ufn450 PDF

    ufnd110

    Abstract: T3535
    Contextual Info: UNITRODE TS CORP 9347963 dF U N I T R O D E CORP | =5347^3 92D D.Gia717 10797 3 D POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled


    OCR Scan     		gia717ufnd110ufnd113t3535 PDF