UA 724 DC Search Results

1N60P

Abstract: 20PF
Contextual Info: 1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 60 V Reverse Voltage dc VR 20 V Peak Forward Current

BV-1

Abstract: BV 724 C LL916 LL916A LL916B
Contextual Info: LL916, LL916A, LL916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500

2SC1907

Contextual Info: ST 2SC1907 NPN Silicon Epitaxial Planar Transistor for UHF TV Tuner and Local Oscillator. The transistor is subdivided into according to its DC current gain. one group, On special request, these transistors can be manufactured in different pin configurations.

1N60P

Abstract: 20PF
Contextual Info: 1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 60 V Reverse Voltage dc VR 20 V Peak Forward Current

1N916

Abstract: 1N916A 1N916B diode 1N916 diode 1N916b
Contextual Info: 1N916, 1N916A, 1N916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500

DIODE OA-200

Abstract: LL916 LL916A LL916B
Contextual Info: LL916, LL916A, LL916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500

DIODE OA-200

Abstract: LL916 LL916A LL916B
Contextual Info: LL916, LL916A, LL916B HIGH CONDUCTANCE FAST DIODES LL-34 Cathode band Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge)

DIODE OA-200

Abstract: 1N916 1N916A 1N916B
Contextual Info: 1N916, 1N916A, 1N916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500

transistor mpsa 42

Abstract: transistor mpsa 42 npn transistor mpsa 92 transistor mpsa 42 Data mpsa 42 transistor a 92 AmpsA42 transistor mpsa 18
Contextual Info: MPSA 42 / 43 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor MPSA 92 and MPSA 93 is recommended.

2SC2120

Abstract: 2sc2120 equivalent 2sC2120 y transistor
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

transistor mpsa 42

Abstract: transistor mpsa 250 transistor mpsa 93 transistor mpsa 92 transistor mpsa 13 MPSA92 transistor mpsa 42 npn mpsa MPSA 92 mpsa 42
Contextual Info: MPSA 92 / 93 PNP Silicon Expitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MPSA 42 and MPSA 43 are recommended.

2SA950

Contextual Info: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be

1S955

Abstract: 2SA1458 2SC3731
Contextual Info: ST 2SA1458 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups M, L and K, according to its DC current gain. On special request, these transistors can be

2SC4115

Contextual Info: ST 2SC4115 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ․Low VCE sat

Contextual Info: ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage V VEBO 6 Collector Current - DC

2SC2787

Contextual Info: ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

st 2SC945

Abstract: st 2SC945 equivalent 2SC945 2SA733 equivalent 2Sc945 equivalent 2SC945 DATASHEET 2sc945 npn transistor st 2SC945 transistor symbol TRANSISTOR 2Sc945 2SA733
Contextual Info: ST 2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended.

2SA733 Y

Abstract: ST 2SA733 2SA733 2SA733 equivalent 2SC945 DATASHEET st 2SC945 2SC945 PIN 2SA733
Contextual Info: ST 2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended.

2SC2901

Contextual Info: ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2310

Contextual Info: ST 2SC2310 NPN Silicon Epitaxial Planar Transistor low frequency ,low noise amplifier . The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC3206

Abstract: 2sC3206 transistor 2SC320
Contextual Info: ST 2SC3206 NPN Silicon Epitaxial Planar Transistor for high voltage switching application, black and white TV video output application. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be

2SC2784

Contextual Info: ST 2SC2784 NPN Silicon Epitaxial Planar Transistor Audio frequency low noise amplifier. The transistor is subdivided into four groups, P, F, E and U according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sc5344

Abstract: TRANSISTOR 2sc5344
Contextual Info: ST 2SC5344 NPN Silicon Epitaxial Planar Transistor Audio power amplifier applications. The transistor is subdivided into two groups O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.