UA 722 FC Search Results

RCK02

Abstract: 51 ohm 5w 102M CNS 020
Contextual Info: CNS 020, CNS 021 Vishay Thin Film Conformal, Radial Discrete Resistor FEATURES • Incorporates Ultrastable Thin Film Element TYPICAL PERFORMANCE ▲ ABS TCR The models CNS 020 and CNS 021 resistors incorporate an ultrastable thin film element into the RCK02 form factor

CECC40300

Abstract: RCK02 CNS 020
Contextual Info: CNS 020, CNS 021 Vishay Thin Film Conformal, Radial Discrete Resistor FEATURES • Incorporates Ultrastable Thin Film Element TYPICAL PERFORMANCE ▲ ABS TCR The models CNS 020 and CNS 021 resistors incorporate an ultrastable thin film element into the RCK02 form factor

RCK02

Abstract: CNS 020
Contextual Info: CNS 020, CNS 021 Vishay Thin Film Conformal, Radial Discrete Resistor FEATURES • Incorporates Ultrastable Thin Film Element TYPICAL PERFORMANCE ▲ ABS TCR The models CNS 020 and CNS 021 resistors incorporate an ultrastable thin film element into the RCK02 form factor

sj 2025

Abstract: kf 203 BN72 GE 52D 46V32 223222 F82W LXC 37 Z07N
Contextual Info: n ?a``WUf[a`e n MbWU[X[USf[a`e 562dd P_X]k kpg\ BeZi\d\ekXc OfkXip \eZf[\i D62Pz/ /z/Q/z Bk\d LNL fg\e Zfcc\Zkfi flkglk SfckX^\ flkglk J`e\ [i`m\i flkglk O\jgfej\ Qfk\d gfc\ flkglk LNL fg\e Zfcc\Zkfi flkglk k`d\ *O`j\1 SfckX^\ flkglk EXcc+ J`e\ [i`m\i flkglk

Contextual Info: LEON-G100 Quad Band GSM/GPRS Data and Voice Module Objective Specification Overview The LEON-G100 module from u-blox is a cost efficient solution bringing full feature Quad Band GSM/GPRS data and voice transmission technology in a

LB 1639

Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Contextual Info: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz

Contextual Info: MP 72 28 BiC M O S Fixed, Octal, Voltage Output, Single or Dual Supply, 8-Bit Digital-to-Analog Converter FEATURES APPLICATIONS M P S Pioneered S eg m e n te d D A C Approach • Function Generators E i g h t 8 - B i t D A C s wi t h B u f f e r A m p l i f i e r s

opto 721

Abstract: 2SD797 2s0797 AC73 302 opto
Contextual Info: St TOSHIBA -C] ISCRETE/OPTO> 9 097 250 TOS HIBA CD ISC R E T E / O P T O ) DE l'iOTTSSD 00D77Ö7 □ 5bC 077ÖT D 'T '- 'T J _ S IL IC O N NPN T R IP L E D IF F U SE D TYPE INDUSTRIAL APPLICATIONS Unit in mm HGIH POWER AMPLIFIER APPLICATIONS.

TK 9207

Abstract: 9N72 A72M kf 203 3zd1
Contextual Info: n MbWU[X[USf[a`e H AH= O = A72M: F O\jfclk`fe*N1O+ AH? Mlkglk g_Xj\ N_Xj\ [`]]\i\eZ\ f] flkglk n ?Sgf[a` Xad jagd eSXWfj yNc\Xj\ b\\g k_\j\ `ejkilZk`fej Xe[ i\m`\n k_\d Y\]fi\ lj`e^ k_`j le`k0 yNc\Xj\ fYj\im\ k_\ ZXlk`fej k_Xk ]fccfn= QSd`[`Y P\i`flj `ealip dXp i\jlck `] `ejkilZk`fej Xi\ efk ]fccfn\[0

Contextual Info: Microsemi m m m Santa Ana, CA M 2830 S. Fairview St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features 500 Volts Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

IXTH102N20T

Abstract: IXTV102N20T 102A IXTQ102N20T 102N20
Contextual Info: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH102N20T IXTQ102N20T IXTV102N20T = 200 V = 102 A Ω ≤ 23 mΩ VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V

Contextual Info: DEVICE SPECIFICATION SC3518 IO-OUTPUT CLOCK DRIVER GENERAL DESCRIPTION FEATURES • Ten clock outputs at primary frequency up to 80 MHz • Leading edge skew for all outputs <0.5 ns • Proprietary output drivers with: - Complementary 24 mA peak outputs, source

ez821

Abstract: S028 ST72101 ST72101G1 ST72101G2 ST72212 ST72212G2 ST72213 ST72213G1 EI166
Contextual Info: SGS-THOMSON S T 7 2 1 0 1 M S T 7 2 2 1 2 /S T 7 2 2 1 3 8-BIT MCU W ITH 4 TO 8K ROM /OTP/EPROM , 256 BYTES RAM, ADC, W DG, SPI AND 1 O R 2 TIM ER S PRO DU CT PREVIEW • User Program Memory ROM/OTP/EPROM : 4 to 8K bytes ■ Data RAM: 256 bytes, including 64 bytes of

VB-39

Contextual Info: HE RME TI CAL L Y S EA L ED GLASS PACKAGED TU N IN G DIODES ABRUPT and HYPERABRUPT E L E C T R IC A L C H A R A C T E R IS T IC S <Ta = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS Oiodt Cap C T I* î'1 0 % P 4 V / 1 M H/ Dr 04 9 SD M H i R A T IO

LH1530F

Abstract: DI01 LH1540 spn3291
Contextual Info: SHARP 1SPECNo. 1 EL 0 6 7 0 5 0 I S S U E: Oct. 4. 1995 To; 1 REFERENCE SPECIFICATIONS Product Type 12 0 Model No. 0ut put LCD Common Driver LH1530F %This specifications containsapages including the cover and appendix. If you have any objectionsplease contact us before issuing purchasing order.

27256 EPROM

Abstract: EVQV
Contextual Info: t 28 — A I2 — 2 27 — A7 — 3 2 6 -A13 V dd CMOS 32,768-Word by 8-Bit LSI Static ROM A6 — 4 25 -AS A9 — 9 24 -A 9 Features: A4 — 6 23 - AH A3 — 7 22 -O E /O E A2 — 8 21 -A IO 9 2 0 - 5 E /C E • A synchronous operation

Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES • OUTLINE DIMENSIONS Units HIGH POWER GAIN: 7 dB TYP at 12 GHz • NE721S01 PACKAGE OUTLINE S01 HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz • • Lg = 0.8 [im , Wg = 330 (im LOW PHASE NOISE: -110 dBc/Hz TYP at 11 GHz

hitachi eprom

Abstract: HN27C512 DG-28 HN27512 HN27512G-25 HN27512G-30 HN27512P-25 HN27512P-30 HN27512G Hitachi Scans-001
Contextual Info: HN27512 Series Maintenance Only 512K 64K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27512 is a 512-Kilobit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27512 features low power dissipation and high speed

VALVO Handbuch

Abstract: valvo handbuch rohren valvo 89 8937 000 Valvo Bauelemente GmbH YD 1175 valvo halbleiter YD1170 20kw Triode triode FU 33
Contextual Info: Elektronik. Wir bauen die Elemente. Senderöhren für Industrie­ generatoren 1983 Datenbuch Elektronik. Wir bauen die Elemente. Unser A rbeitsgebiet - besonders die M i­ kroelektronik - e ntw ickelt sich im m er rascher zum M otor für eine Vielzahl von Innovationen.

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

XR-2011

Abstract: XR2011 XR2013CN XR2013 XR-2012
Contextual Info: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic

741 cdp

Abstract: 6 pin mini din to usb wiring G7 mic diode TA 7122 AP charger hp MHL Tx VBDET 733p bd91 BD914
Contextual Info: BD91411GW Datasheet Built-in OVP Micro USB Switch with USB2.0, MHLTM and Audio BD91411GW ●General Description BD91411GW is USB connector interface IC. It is possible to use it for the application for the mobile device such as smart phones and mobile phones.

741 cdp

Abstract: diode 20KHz car battery charger test report MHL receiver MHL Tx
Contextual Info: Datasheet Built-in OVP Micro USB Switch with USB2.0, MHLTM and Audio BD91411GW ●General Description BD91411GW is USB connector interface IC. It is possible to use it for the application for the mobile device such as smart phones and mobile phones. ●Key Specifications

NJU3422

Abstract: NJU3422L SDIP24
Contextual Info: NJU3422 Ik f t m T T iW - i > h n - 7 K 7 - f / < f í f l ! mm m NJU3422 l i , 4 /8 1 ' -y h C P U ¿ a > I- □ — =7 U r ^ A t t i * A <í J B É 4 '$ 7 lc S ^ it W ^ " f — í ’RAM , > K H H Æ K g * Œ K 7 - fA ' ^ J± 4 5 V - T7 K U T . * 't 7 > i ',