U9120 Search Results

Contextual Info: IRFR/U9120N D -P ak T O -2 52 A A l l l l l l l I-P ak T O -25 1 A A Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (U9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description D VDSS = -100V The D-Pak is designed for surface mounting using vapor

Contextual Info: SFR/U9120 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS on = 0.6 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -4.9 A n Improved Gate Charge n Extended Safe Operating Area D-PAK n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

MOSFET IRF 380

Contextual Info: PD - 95020 IRFR/U9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (U9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω

Contextual Info: SFR/U9120 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -1 0 0 V ^D S o n - 0 -6 In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -100V

irfr9120pbf

Abstract: IRFU120 U120
Contextual Info: PD - 95096A IRFR9120PbF U9120PbF • Lead-Free 1 IRFR/U9120PbF 2 IRFR/U9120PbF I-Pak TO-251AA Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRF U120 WITH AS S EMBLY LOT CODE 5678

IRF9520N

Contextual Info: IRFR/U9120NPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage

Contextual Info: SFR/U9120 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -4.9 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

AS-49

Contextual Info: SFR/U9120 P o w e r MOSFET FEATURES B V D SS R ugged G ate O xide T e ch n o lo g y • Lo w e r Input C a pa citance ■ Im proved G ate C harge E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 |a.A M ax. @ V DS = -1 00V ■ Lo w e r

IRF 064 N

Abstract: irf 064 U9120 irf 940 A5 marking code IPAK a5 marking TO-252AA Package
Contextual Info: PD - 95096 IRFR/U9120PbF • Lead-Free www.irf.com 1 03/10/04 IRFR/U9120PbF 2 www.irf.com IRFR/U9120PbF www.irf.com 3 IRFR/U9120PbF 4 www.irf.com IRFR/U9120PbF www.irf.com 5 IRFR/U9120PbF 6 www.irf.com IRFR/U9120PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches)

sfr 135

Abstract: TA 8269 H diode SFR-135
Contextual Info: SFR/U9120 Advanced Power MOSFET FEATURES BVdss = -100 V • Avalanche Rugged Technology = 0.6 £2 ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = -4.9 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V

EIA-541

Abstract: IRFR120 IRFU120 U120 P-Channel irf IRF p-CHANNEL Diode P 619
Contextual Info: PD - 95096A IRFR9120PbF U9120PbF • Lead-Free www.irf.com 1 1/10/05 IRFR/U9120PbF 2 www.irf.com IRFR/U9120PbF www.irf.com 3 IRFR/U9120PbF 4 www.irf.com IRFR/U9120PbF www.irf.com 5 IRFR/U9120PbF 6 www.irf.com IRFR/U9120PbF Peak Diode Recovery dv/dt Test Circuit

Contextual Info: PD - 9.1507A International IQ R Rectifier PRELIMINARY IRFR/U9120N HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR9120N • Straight Lead (U9120N) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated

Contextual Info: SFR/U9120 Advanced Power MOSEET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ VDS = -100V

IRFU9120N

Abstract: IRFR9120N
Contextual Info: PD - 9.1507A PRELIMINARY IRFR/U9120N HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (U9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.48Ω

IRFR9120N

Abstract: IRFU9120N 14.5M 1982 U912
Contextual Info: PD - 9.1507A PRELIMINARY IRFR/U9120N HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (U9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.48Ω

SFR 252 diode

Contextual Info: SFR/U9120 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -4.9 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V

BR0015

Abstract: RT 2070 L TLS251 MU03-2250 MU16 GO 635 LT9000D MV57173 HLMP-0301 HLMP-2350
Contextual Info: u ft fr Z if. r, HP « •T„ = 25'Ci m n.% f í* ¡5 > 2 0 ‘A * deg ■m 100 A/' ft k ë fë « ¡ « il. /, Ir ;m A 1 Vr :V ' 17 \, = 25'C-' ■Ë ti± » ffrS K m n Vu lr 'm A '1 imA:- V; C: 635 4 .8 20 2 .0 20 30 —40—85 25 H L M P-2300 #Lf£ 635

ISL9504

Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

FR9120

Abstract: 9121
Contextual Info: IRFR9120/9121 U9120/9121 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower R ds o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area

IRFR9120N

Abstract: IRFU9120N
Contextual Info: PD-95020A IRFR9120NPbF U9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (U9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω

Contextual Info: PD - 9.1507 International IOR Rectifier PRELIMINARY IR F R /U 9 1 2 0 N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (U9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated V dss = -100V

fr9210

Abstract: F 9212 u921
Contextual Info: IRFR9210/9212 IRFU9210/9212 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • L ow e r R d s o n Im p ro ve d in d u ctive r u g g e d n e s s F a s t sw itc h in g tim e s R u g g e d p o ly silic o n g a te c e ll stru ctu re Low er in pu t c a p a c ita n c e

d7810

Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED

ISL9504

Abstract: ISL9504B M75 MLB 820-2101 PP3V42G3H C8550 c7381 N8242 c5855 ISL9504 U7500 c3334 schematic diagram
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT