U8C015 Search Results

AD590H

Abstract: NE565 NE567 se665 RU 10003 540S
Contextual Info: ADVANI ÔERLIKON/ SEMICOND 3bE i> I □SblbMÖ OOQOOlö =1 M S E L I INTEGRATED CIRCUITS “- 4 3 - 0 \ Temp Range mA (Ohms) Supply Voltage (% V) (ppm^C) Supply Current (Vpp) AM output available <%) Input Resistance Output Sw ing ± 5% Deviation C% fo) Frequency

Contextual Info: A»VANI OERLIKON/ SEMICONJ 3bE D H ISELI OEblbMÖ DÜ0Ü007 4 ' SILICON DIODES d ) Z e n e r diodes A SEM ICO NDU CTO RS o ’2" Electrical Characteristics TYPE ^S Z ✓ GSZ /-GSZ ,G SZ 'GSZ /GSZ GSZ Vg s z » GSZ /GSZ /GSZ a *SZ /GSZ ,GSZ VGSZ ; gsz /GSZ

7812 Y 7912

Abstract: 7812 to92 7805 V Reg LM 327 IC LM 7812 7812 7912 7805 7812 7912 TO-3 7815 to-3 LM327
Contextual Info: ADVANI OERLIKON/ SEMICOND 3bE P □EblbMfi D0DDD17 ? BISELI ' - INTEGRATED CIRCUITS Supply Voltage V min/max / Drift with Temp PPM/°C M/A$ Trigger Current Trigger Voltage Threshold Voltage V rr CC Volts (typ) (typ) Reset Voltage Volts @Vl Vcc - 1 9 Threshold

3055t

Abstract: 2955T 2n2646 pin N2647 N-055 3055H n055 2N2646 2N4393 RU 6102
Contextual Info: AD VA NI O E R L I K O N / SEMICOND 3bE D • ü2blbMñ QOQDQ1S 3 ■ S E L I — r - 2 1 /7 - ö SILICON TRANSISTORS SEMICONDUCTORS g Power transistors TYPE NPN ; PNP PD Tc=25°C W VCBO V 117 117 117 117 75 75 75 115 75 150 150 150 117 25 50 25 50 50 50

C557A

Abstract: C557B c 557b 557b npn U1W npn SG311 SG119 bc558c C558B SF104
Contextual Info: A3>VA NI O E R L I K O N / S E M IC O N D 3bE D O S b lb M ê D O O D Ü 11 b B S E L I -3 1 -1 5 SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteristics At Tj»25°C Maximum Ratings Pd T«-25*C W TYPE NPN f PNP / B C , 307 307A 307B i JBC 308 I JBC

1n4148 D035

Abstract: sa71
Contextual Info: ADVANI ÔERLIKON/ SEMICOND 3bE ]> 02blb4fl DOODDDb 2 PISELI -01 - û \ SILICON D IO D E S SEM ICONDUCTORS 'C 5 a) General purpose Maximum R atings TYPE * . 'M D 50/D 50 , SH200 s* SH200A „ SH202 ^ SH202A SH212 ^ SH212A ✓ 'S H 222 ^S H 222A ^ SH242 SH242A