U5410 Search Results

IRFR5410

Abstract: IRFU5410 100v P-Channel DPAK U5410
Contextual Info: PD - 9.1533A IRFR/U5410 l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description

MAX1302

Contextual Info: 北京伊泰克电子有限公司 简介 MAX1302 多量程低功耗、16 位、逐次逼近型模数转换器， 采用+5V 单电源供电，具有高达 115ksps 的吞吐量。独立的数字电源 允许通过可将电源电流降至 1.3mA 典型值 。完全关断模式则可将

Contextual Info: P D -9 .1 5 3 3 International IQ R Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET Ultra Low O n-Resistance P-Channel Surface M ount IR FR 5410 Straight Lead (IR FU 5410) A dvanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -1 0 0 V

IRFR P-Channel MOSFET

Abstract: IRFR5410 IRFU5410 pcb layout for TO 252AA
Contextual Info: PD - 9.1533A IRFR/U5410 l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description

DPAK marking code 300

Contextual Info: PD -95314 IRFR/U5410PbF z z z z z z z z Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω G

U5410

Contextual Info: PD - 9.1533 International IQR Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5410 • Straight Lead (U5410) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated

IRF9530N

Abstract: diode 78a
Contextual Info: IRFR/U5410PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage

Contextual Info: PD - 9.1533A IRFR/U5410 HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description

Contextual Info: 取付穴参考寸法図 •DCファンモータ用 □３ １． ０シリーズ 吐出側/吸込側 □４ ２． ０シリーズ 吐出側/吸込側 □６ ０シリーズ ３． 吐出側/吸込側 58.0 50.0 4-φ3.2 4-φ4.3 24.0 28.0 φ 50.0 .0 39 58.0

Contextual Info: 16位1 MSPS/500 kSPS、 差分PulSAR ADC AD7915/AD7916 产品特性 概述 低功耗： AD7915 4 mW 1 MSPS，仅VDD 7 mW (1 MSPS，总功耗） AD7916 2 mW (500 kSPS，仅VDD） 3.7 mW (500 kSPS，总功耗） 16位分辨率、无失码 吞吐速率：1 MSPS (AD7915)/500 kSPS (AD7916)

CT-A07RN11-LG

Abstract: CT-A07RN11-PJ A70M CT-A10RN14-PJ CT-A10RN14-LG Atlanta-100 KDM-A CT-A08RN12-LG CT-A08RN12-PJ transwitch
Contextual Info: Atlanta 100 TM 产品 简 介 通信处理器系列 Atlanta 100TM提供一流性能，以最低功耗和物 料单 BOM 成本，为一系列需要IP数据包路 Atlanta 100是一个高度集成的产品系列，结合了RISC处理器 64字节的以太帧实现100 Mbps有线高速路由吞吐量性能，同时

el 1533

Abstract: IRFR5410 IRFU5410
Contextual Info: PD - 9.1533 IRFR/U5410 PRELIMINARY HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.205Ω G

OL2R1

Abstract: AD9856 AD9857 AD9957 345N D1088 A3932 bfi16
Contextual Info: 内置18位I/Q数据路径和14位DAC 的1 GSPS正交数字上变频器 AD9957 特性 概述 1 GSPS内部系统时钟（高达400 MHz模拟输出） 内置1 GSPS 14位DAC 数据吞吐速率：250 MHz I/Q 相位噪声：≤125 dBc/Hz（1 kHz偏移，400 MHz载波）

irf 100v 200A

Abstract: IRF9530N 64mh
Contextual Info: IRFR/U5410PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

ISL9504

Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

MCP79MXT-B3

Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE

ISL9504

Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
Contextual Info: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

ISL9504

Abstract: ISL9504B M75 MLB 820-2101 PP3V42G3H C8550 c7381 N8242 c5855 ISL9504 U7500 c3334 schematic diagram
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

IRF 55v 200A

Abstract: IRFR P-Channel MOSFET IRFR5410 IRFU5410 irfr5410pbf irf 100v 200A
Contextual Info: PD -95314A IRFR5410PbF U5410PbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω

e3 sot363 8pin

Abstract: ISL9504 PP3V42G3H C8050 R5370 "cross reference" k50 apple NVIDIA G84m p66 apple M75 MLB 820-2101 051-7225
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

PP3V42G3H

Abstract: apple J8000 ISL9504 NVIDIA G84m C4740 p66 apple C8050 apple computer ad30 ok 1500 3p3 C7103
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD SCHEM,MLB,MBP15 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 04/24/2007

ISL9504

Abstract: pg65d U8550 SH0925 DP431 U8500 j4310 vishay CK 67A PP3V42G3H 338S0432
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15" MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

Contextual Info: PD -95314A IRFR5410PbF U5410PbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω