U430A Search Results

Contextual Info: IRFR-U430A_RC, SiHFR-U430A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

400v 50A DIODE

Abstract: IRFU120
Contextual Info: IRFR/U430APbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current

Contextual Info: ÍRFR/U430A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVqss = 500V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VDS= 500V

U430A

Abstract: 5BA DIODE
Contextual Info: IRFR/U430A A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 .5 Î 2 3 .5 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK

Contextual Info: IRFR/U430A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD "I 3.5 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U430A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.5Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

Contextual Info: IRFR/U430A Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 500 V ^ D S o n = 1 .5 & o II ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 n A (Max.) @ V DS = 500V

Contextual Info: IRFR/U430A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD "I 3.5 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

Contextual Info: IRFR/U430A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max @ VDS = 500V

IRF 100A 500V

Abstract: 400V power mosfet
Contextual Info: IRFR/U430A A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 .5 Î 2 3 .5 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK

IRF Power MOSFET code marking

Abstract: IRF 50A EIA-541 IRFR430A IRFU430A R120 IRF 250V 100A 4.5v to 100v input regulator
Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free l PD -95076B IRFR430APbF U430APbF HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple

EZ-34

Abstract: IRFM120A U2N60
Contextual Info: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A

Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD -95076A IRFR430APbF U430APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple

EIA-541

Abstract: IRFR120 IRFR430A IRFU120 IRFU430A 4.5V TO 100V INPUT REGULATOR
Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD -95076A IRFR430APbF U430APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple

B331 transistor

Abstract: B331 transistor datasheet U410B 74LVX125A EV-2MAN21 CR710 XCS10XLVQ100-4 U501D led0603r A 42 B331 transistor datasheet
Contextual Info: CobraNet EV-2 Digital Audio Networking Processor CobraNet TM EV-2 Development System Manual Copyright 2005 Cirrus Logic, Inc. http://www.cirrus.com SEP 2005 EV-2MAN21 CobraNet™ EV-2 Contacting Cirrus Logic Support For all product questions and inquiries contact a Cirrus Logic Sales Representative.

MOSFET IRF 940

Abstract: IRF 50A MOSFET IRF 635 4.5V TO 100V INPUT REGULATOR
Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free l PD -95076 IRFR430APbF U430APbF HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple