U3110 Search Results

AULU3110Z

Abstract: AULR3110Z AUIRLR3110Z AUIRLU3110Z ISD 1820 P kk63 AEC-Q101-001 u3110z
Contextual Info: PD - 96369 AUTOMOTIVE GRADE AUIRLR3110Z U3110Z Features l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

Contextual Info: AUIRLR3110Z U3110Z Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S Description VDSS

ISD 1820 P

Abstract: irlr3110
Contextual Info: PD - 97175B IRLR3110ZPbF U3110ZPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ G Description

Contextual Info: PD - 97175B IRLR3110ZPbF U3110ZPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ G Description

AN-1005

Abstract: ISD 1820 P
Contextual Info: PD - 97175A AUTOMOTIVE MOSFET Features l l l l l IRLR3110ZPbF U3110ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ

IRLR3110ZPBF

Abstract: U3110ZPbF IRLU3110 ISD 1820 IRLR3110Z IRLU3110ZPBF AN-1005 U3110
Contextual Info: PD - 97175A AUTOMOTIVE MOSFET Features l l l l l IRLR3110ZPbF U3110ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ

Contextual Info: 7 6 4 . 1 D F P C ftT J g a INSERTION DEPTH OF FPC B±0J n X —3 / CIRCUIT \ \y S’-SX JL TERMINAU B a L L a! ifi ifi ifi ifi ifi ip rfi ifr ' I l_J |_| l_J l_J l_J |_| |_| l_J 1/ \_ ! ! ! ! ! ! m r—« rn _/. ¥ 1 3 (NOTES) : . ^ ( M A T E R IA L )

ISL6258

Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE

LI3154

Abstract: U3110 56-QFP LI315
Contextual Info: SPECIALFUNCTION ICs ICs for Calculators • ICs for Calculators Functions Digit 8 10 10/12 14 Model No. Memory Power Auto power Pinctuafai supply off Others Supply voltage V — ,% 1.5 • — GPM, % 1.5 — — V, % 1.5 Ba/SB Pin selectable • ■f, MU key, %, Memory hold

Contextual Info: PD - 97175 AUTOMOTIVE MOSFET Features l l l l l IRLR3110ZPbF U3110ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 14mΩ

Contextual Info: PD - 96369 AUTOMOTIVE GRADE AUIRLR3110Z U3110Z Features l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant