U28 CMOS Search Results

S 2563

Abstract: 2564 eprom texas
Contextual Info: TMS27C256 262,144 BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY SEPTEMBER 1 9 8 4 - Organization . . . 32K x 8 REVISED NOVEMBER 1985 J PACKAGE TOP VIEW! Single 5-V Power Supply 1 U28 27 2 3 26 4 25 24 5 6 23 7 22 21 8 20 A1C 9 AO C 10 19 18 Q IC 1 Q2 Q 12 17

alc883

Abstract: 940GML 945GM NB-945GM U2829 NS87383 CHRONTEL-CH7307 NVIDIA-G72M CN15 jumper LAN TRANSFORMER
Contextual Info: 19 21 23 24 26 G1: CMOS clear Jumper Jumper settings 20 22 25 27 28 29 30 31 18 17 16 15 14 13 12 32 1 11 10 9 8 7 6 5 4 2 3 1. Docking CONN. CN9 2. RJ45 CONN. (CN8) 3. CRT CONN. (CN10) 4. LAN TRANSFORMER (U21) 5. SUPER I/O -NS87383 (U20) 6. S-Video CONN. (CN15)

U28 113

Abstract: SL72U4J64M4H-A10V
Contextual Info: SL72U4J64M4H-A10V 64M X 72 Bits SDRAM Unbuffered DIMM Optimized for ECC PC66 FEATURES GENERAL DESCRIPTION • • • The SiliconTech SL72U4J64M4H-A10V is a 64M x 72 bits Synchronous Dynamic RAM (SDRAM) Dual In-line Memory Module (DIMM). The SL72U4J64M4H-A10V consists of thirtysix CMOS 8M x 4 bits x 4 banks SDRAMs in 54-pin 400-mil

U28 113

Abstract: SL64U4G32M4G-A10V
Contextual Info: SL64U4G32M4G-A10V 32M X 64 Bits SDRAM Unbuffered DIMM FEATURES GENERAL DESCRIPTION • • • The SiliconTech SL64U4G32M4G-A10V is a 32M x 64 bits Synchronous Dynamic RAM SDRAM Dual In-line Memory Module (DIMM). This module consists of thirty-two CMOS 4M

SL72U4G32M4H-A10V

Contextual Info: SL72U4G32M4H-A10V 32M X 72 Bits SDRAM Unbuffered DIMM Optimized for ECC FEATURES GENERAL DESCRIPTION • • • The SiliconTech SL72U4G32M4H-A10V is a 32M x 72 bits Synchronous Dynamic RAM SDRAM Dual In-line Memory Module (DIMM). The SL72U4G32M4H-A10V consists of thirtysix CMOS 4M x 4 bits x 4 banks SDRAMs in 54-pin 400-mil

88E1111

Abstract: Marvell PHY 88E1111 Datasheet HFJ11-1G02E VSC8240 Marvell PHY 88E1111 altera Marvell PHY 88E1111 layout PC28F00AM29EWL Marvell PHY 88E1111 MDIO read write sfp 88e1111 sfp i2c Marvell PHY 88E1111 MDIO read write
Contextual Info: 100G Development Kit, Stratix IV GT Edition Reference Manual 100G Development Kit, Stratix IV GT Edition Reference Manual 101 Innovation Drive San Jose, CA 95134 www.altera.com MNL-01057-1.0 Subscribe 2010 Altera Corporation. All rights reserved. ALTERA, ARRIA, CYCLONE, HARDCOPY, MAX, MEGACORE, NIOS, QUARTUS and STRATIX are Reg. U.S. Pat.

Contextual Info: Product Specification 1GB 128MX64 SDRAM PC100/PC133 SODIMM General Information Rev: 1.1 VL466S2853-GA/GH/GL 1GB 128Mx64 SDRAM PC100/PC133 SODIMM Description: The VL466S2853 is a 128M x 64 Synchronous Dynamic RAM high density memory module.This memory module consists of thirty-two CMOS 32Mx8 bits with 4 banks Synchronous DRAMs inTSOP-II package and a

cke 003

Abstract: DQ41 128MX64 VL466S2853
Contextual Info: Product Specification 1GB 128MX64 SDRAM PC100/PC133 SODIMM General Information Rev: 1.1 VL466S2853-GA/GH/GL 1GB 128Mx64 SDRAM PC100/PC133 SODIMM Description: The VL466S2853 is a 128M x 64 Synchronous Dynamic RAM high density memory module.This memory module consists of thirty-two CMOS 32Mx8 bits with 4 banks Synchronous DRAMs inTSOP-II package and a

MT36VDDF25672G

Contextual Info: 1GB, 2GB x72, ECC, DR 184-Pin DDR RDIMM Features DDR SDRAM RDIMM MT36VDDF12872 – 1GB MT36VDDF25672 – 2GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 184-pin, registered dual in-line memory module (RDIMM)

diode marking u33

Abstract: MT46V64M4 PC2100 PC2700 PC3200 256x72
Contextual Info: 1GB, 2GB x72, ECC, DR 184-Pin DDR SDRAM RDIMM Features DDR SDRAM RDIMM MT36VDDF12872 – 1GB MT36VDDF25672 – 2GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 184-pin, registered dual in-line memory module

Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • • • • • Figure 1: 240-pin, fully buffered DIMM (FBDIMM)

Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • • • • • Figure 1: 240-pin, fully buffered DIMM (FBDIMM)

ps3109

Abstract: u28 201 MARKING CODE U37 marking U38 DDR2-667 MO-256 PC2-5300 DDR2 pin out marking micron ddr2 sn131
Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.55V DDR2 SDRAM FBDIMM MT36RTF51272FY – 4GB Features • • • • • • • • Information in the 1.8V DDR2 FBDIMM data sheet is directly applicable to this 1.55V DDR2 FBDIMM, except where stated otherwise in this data sheet.

pn133

Abstract: SN123 MT36GTF51272F
Contextual Info: Preliminary‡ 4GB x72, DR, FB, 1.50V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272F – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption 1.40V ≤ VDD = VDDQ ≤ 1.70V for DDR2 SDRAM

Contextual Info: 4GB x72, ECC, DR 240-Pin DDR3 SDRAM RDIMM Features DDR3 SDRAM RDIMM MT36JS(Z)F51272PZ Features Figure 1: 240-Pin RDIMM (MO-269 R/C J) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

micron SDRAM SPD table

Abstract: U26 MARKING
Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB Features • • • • • • • • Except where stated in this data sheet, information in the corresponding 1.8V DDR2 FBDIMM data sheet is directly applicable to the 1.5V DDR2 FBDIMM. For

marking U34 Z 201

Abstract: marking U34 marking code U6 DO 214 SS91
Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM 1.55V FBDIMM Features 1.55V DDR2 FBDIMM MT36RTF51272FZ – 4GB Features • • • • • • • • Figure 1: 240-Pin FBDIMM (MO-256 R/C E) 240-pin, fully buffered DIMM (FBDIMM) Very low power DDR2 operation 1.5V ≤ VDD ≤ 1.9V for DDR2 SDRAM

MT47J256M4

Abstract: micron SDRAM SPD table MT47J256M
Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB Features • • • • • • • • Except where stated in this data sheet, information in the corresponding 1.8V DDR2 FBDIMM data sheet is directly applicable to the 1.5V DDR2 FBDIMM. For

u28 hall

Abstract: US2881 US2882 hall u28 u28 cmos
Contextual Info: US2881/2882 CMOS High Sensitivity Latch Features and Benefits • • • • • • Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality, and cost

U28 113

Contextual Info: SL72U4J64M4H-A10xV 64M X 72 Bits 512MB SDRAM Unbuffered DIMM ECC Optimized (PC100) FEATURES • • • • • • • • • GENERAL DESCRIPTION PC100 Compliant (see Ordering Information) Burst Mode Operation Auto and self refresh capability (4096 cycles/64ms refresh)

Contextual Info: SL72U4L128M8H-A10xV 128M X 72 Bits 1GB SDRAM Unbuffered DIMM ECC Optimized (PC100) FEATURES • • • • • • • • • GENERAL DESCRIPTION PC100 Compliant (see Ordering Information) Burst Mode Operation Auto and self refresh capability (8192 cycles/64ms refresh)

u28 sensor hall

Abstract: u28 hall UGN3132 UGN3132/33
Contextual Info: US2881/2882 CMOS High Sensitivity Latch Features and Benefits n n n n n n n Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality, and cost

u28 sensor hall

Abstract: u28 hall UGN3132 hall u28 u28 127 hall US2881UA 22323 US2881SO u28 hall SENSOR sot transistor pinout
Contextual Info: US2881/2882 CMOS High Sensitivity Latch Features and Benefits • ■ ■ ■ ■ ■ ■ Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality, and cost

RA11b

Contextual Info: SL72R4D32M4H-A10xV 32M X 72 Bits 256MB SDRAM Registered 168-Pin DIMM ECC (PC100) FEATURES • • • • • • • • • GENERAL DESCRIPTION PC100 / Intel 1.0 Compliant (see Ordering Information) Burst Mode Operation Auto and self refresh capability