U246 Search Results

Contextual Info: SMD Power Inductor CEP123 Description • Ferrite core construction. • Magnetically shielded. • L W H: 12.8 12.8 3.5 mm Max. • Product weight: 1.5g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. RoHS x × Dimension - [mm] 1.70±0.2 ②

CL31A475KACLNNC

Abstract: multilayer ceramic capacitor
Contextual Info: SPECIFICATION • Samsung P/N : CL31A475KACLNNC ㎌, 25V, ±10%, X5R, 1206 • Descriptiont : CAP, 4.7㎌ • Supplier : Samsung electro-mechanics • Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance

cl31b474k

Contextual Info: SPECIFICATION • Samsung P/N : CL31B474KBHNNNE ㎋, 50V, ±10%, X7R, 1206 • Description : CAP, 470㎋ • Supplier : Samsung electro-mechanics • Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance

Contextual Info: COPAL ELECTRONICS SLIDE SWITCHES SMD RoHS compliant CJS INTERNAL STRUCTURE ① ② ⑤ ③ ⑥ ④ Part name •FEATURES ● RoHS compliant ● Easy to set slider with line marking ● With neutral detent type lined up to 1 pole 2contacts switch ● Compatible with most automatic pick & place machinery

Contextual Info: PTZ15B Diodes Zener diode PTZ15B zApplications zDimensions Unit : mm zLand size figure (Unit : mm) Voltage regulation 2.0 ② 0.1±0.02 0.1 4.2 5.0±0.3 1.2±0.3 4.5±0.2 ① zFeatures 1) Small power mold type. (PMDS) 2) High ESD tolerance 2.0

Contextual Info: RF101A2S Diodes Fast recovery diode RF101A2S zApplications General rectification zDimensions Unit : mm CATHODE BAND (BLUE) 4 φ0.6±0.1 ① ② zFeatures 1) Cylindrical mold type. (MSR) 2) Ultra Low VF. 3) Ultra high switching. 4) Low switching loss. 5) High ESD.

Contextual Info: PTZ9.1B Diodes Zener diode PTZ9.1B zApplications zDimensions Unit : mm zLand size figure (Unit : mm) Voltage regulation 2.0 ② 0.1±0.02 0.1 4.2 5.0±0.3 1.2±0.3 4.5±0.2 ① zFeatures 1) Small power mold type. (PMDS) 2) High ESD tolerance 2.0

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05464

Abstract: 2612N 3290T
Contextual Info: VBE 26-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 32 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ A N VBE 26-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0

Contextual Info: VBO 55 IdAV = 55 A VRRM = 800-1600 V Single Phase Rectifier Bridge Preliminary data VRSM 900 1300 1500 1700 1900 Symbol V 800 1200 1400 1600 1800 VBO 55-08NO7 VBO 55-12NO7 VBO 55-14NO7 VBO 55-16NO7 VBO 55-18NO7 Test Conditions Maximum Ratings IdAV ①TC = 100°C, module

Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 640 600 DSEI 1x 31 IFAVM = 30 A VRRM = 600 V trr = 35 ns miniBLOC, SOT-227 B Type DSEI 1x 31-06C DSEI 1x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5

PS18

Contextual Info: VBO 78 IdAV = 78 A VRRM = 800-1600 V Single Phase Rectifier Bridge in ECO-PAC 2 Preliminary data VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 PS18 Types ~L 9 ~ K10 VBO 78-08NO7 VBO 78-12NO7 VBO 78-14NO7 VBO 78-16NO7 Symbol Test Conditions IdAV ① TC = 100°C, module

4516N

Contextual Info: VBO 45 IdAV = 45 A VRRM = 800-1600 V Single Phase Rectifier Bridge Preliminary data VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Symbol Types VBO 45-08NO7 VBO 45-12NO7 VBO 45-14NO7 VBO 45-16NO7 VBO 45-16NO7 Test Conditions Maximum Ratings IdAV ①TC = 100°C, module

E72873

Abstract: 30-10B
Contextual Info: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-10B DSEI 2x 31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5

diode avalanche DSA 25 8

Abstract: 17-12A diode avalanche DSA ixys dsi 17-16-A DIODE DSA 18 1712A
Contextual Info: DS 17 DSA 17 VRRM = 800-1800 V IF RMS = 40 A IF(AV)M = 25 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode DO-203 AA Cathode V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A DSI 17-08A DSI 17-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA 17-12A

IXYS 12-10A

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 12 VRSM A V VRRM Type C IFAVM = 12 A VRRM = 1000 V trr = 50 ns TO-220 AC C V A 1000 1000 DSEI 12-10A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

Diode Single Bridge

Abstract: R2 KL 108R2
Contextual Info: VUO 27 IdAV = 28 A VRRM = 600-1200 V Three Phase Rectifier Bridge Preliminary data 600 800 1200 VUO 27-06NO7 VUO 27-08NO7 VUO 27-12NO7 Symbol Conditions IdAV ① TC = 100°C, module IFSM TVJ = 45°C; VR = 0; I2t K Maximum Ratings 28 A t = 10 ms 50 Hz , sine

6110B

Abstract: IXYS DSEI 2X E72873
Contextual Info: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

mee transient

Abstract: 95-06DA
Contextual Info: MEA 95-06 DA MEK 95-06 DA MEE 95-06 DA Fast Recovery Epitaxial Diode FRED Module VRSM VRRM V V 600 600 2 MEA95-06 DA 2 MEK 95-06 DA 3 1 2 Test Conditions IFRMS IFAVÿÿ① IFRM Tcase = 75°C Tcase = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

28-12NO7

Contextual Info: VUO 28 IdAV = 28 A VRRM = 600-1200 V Three Phase Rectifier Bridge Preliminary data VRSM VRRM V V 700 900 1300 600 800 1200 D Type VUO 28-06NO7 VUO 28-08NO7 VUO 28-12NO7 Symbol Test Conditions IdAV ① TC = 100°C, module IFSM TVJ = 45°C; VR = 0 I2t H A N

ixys dsei 2x61

Abstract: dsei 2x60 IXYS DSEI 2 IXYS DSEI 2X 2x61
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 IFAVM = 2x60 A VRRM = 600 V trr = 35 ns Type DSEI 2x 61-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

T814

Abstract: 500-06DA
Contextual Info: MEO 500-06 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 600 V IFAVM = 514 A trr = 250 ns Preliminary data 3 3 VRSM VRRM V V 600 600 1 1 Type MEO 500-06DA Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5