U 855 D Search Results

Contextual Info: Data Sheet SLI-570 / SLA-570 Series Features ・Viewing angle 2θ 1/2 : 20 SLI-570 Series ・Viewing angle 2θ 1/2 : 25 (SLA-570 Series) ・High brightness Color Type U D Y M Specifications Viewing angle 2θ 1/2 / 20 : High brightness Part No. Chip Structure

JTs smd diode

Abstract: smd diode marking Ja smd JS marking JTs datasheet mv 103 smd diode UM BAS28W th460 smd marking SOT343
Contextual Info: Diodes SMD Type Silicon Switching Diode Array BAS28W SOT-343 Unit: mm Features For high-speed switching applications Electrical insulated diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 S ym b o l V a lu e U n it D io d e re ve rs e vo lta g e P a ra m e te r

GSBAS16

Contextual Info: CORPORATION G SB AS16 ISSUED DATE :2006/12/12 REVISED DATE : S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A Description The GSBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.

GDBAS16

Contextual Info: CORPORATION G DB AS16 ISSUED DATE :2006/12/12 REVISED DATE : S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A Description The GDBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.

A6S marking code

Contextual Info: SIEMENS BAS 16S Silicon Sw itching Diode Array • For high-speed switching applications • Internal galvanic isolated Diodes in one package Tape loading orientation Top View 6 54 n n n M arking on S O T -363 package ( f o r e xam ple W Is) co rre spo n ds to pin 1 o f device

GBAS16

Contextual Info: CORPORATION G B AS16 ISSUED DATE :2002/10/28 REVISED DATE :2006/06/06C S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A Description The GBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.

GBAW56

Contextual Info: CORPORATION G B AW 5 6 ISSUED DATE :2004/02/06 REVISED DATE :2005/12/23C S U R F A C E M O U N T, S W I T C H I N G D I O D E Description The GBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in a small SOT-23 plastic SMD package.

GSBAW56

Contextual Info: CORPORATION G S B AW 5 6 ISSUED DATE :2005/12/23 REVISED DATE : S U R F A C E M O U N T, S W I T C H I N G D I O D E Description The GSBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in a small SOT-323 plastic SMD package.

2SK757

Abstract: 251C
Contextual Info: 2SK757 P o w e r F-MOS FET 2SK757 Silicon N-channel Power F-M O S FET • P ackage Dimensions ■ Features • L ow ON r e s is ta n c e R ds o n : Unit: mm (o n ) = 0 . 2 2 i l ( ty p .) R ds • H ig h s w itc h in g r a t e : t r = 6 0 n s ( t y p .)

Contextual Info: T e m ic BAV70 TELEFUNKEN Semiconductors Silicon planar dual diode Features • Common cathode Applications Fast switches in thick and thin film circuits Absolute Maximum Ratings Tj = 25°C Test Conditions Parameter Reverse voltage Peak forward surge current tp=l is

1N935BUR-1

Abstract: 1N937BUR-1 1N938BUR-1 1N939BUR-1 CDLL935 CDLL935A CDLL935B CDLL936 CDLL939B U 855 D
Contextual Info: • 1N935BUR-1. 1N937BUR-1. 1N938BUR-1. 1N939BUR-1 AVAILABLE IN JAN. JANTX AND JANTXV 1N935BUR-1 thru 1N939BUR-1 and •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES CDLL935 thru CDLL939B • LEADLESS PACKAGE FOR SURFACE MOUNT • 9.0 VOLT NOMINAL ZENER VOLTAGE

Kjh diode

Abstract: JEDEC 1N4148 Ti-150-C
Contextual Info: _ BAV70 Vishay Telefunken Dual Surface Mount Switching Diode Features • Fast switching speed • Electrically identical to standard JEDEC 1N4148 • High conductance • Surface mount package automatic insertion • Common cathode ideally suited for

kje vishay

Abstract: bav99 vishay marking kje
Contextual Info: BAV99_ Vishay Telefunken Dual Surface Mount Switching Diode Features • Fast switching speed • High conductance • Surface mount package automatic insertion • Connected in series ideally suited for Absolute Maximum Ratings Tj = 25°C

M34280M1

Abstract: M34280
Contextual Info: IC dependence of oscillating characteristics M34280M1 FCR3.64MC5 - STD Room Temp. Vdd CV3 3 * IC NO. item a~e M34280M1 - HH FCR3.G4MC5 Ta* 20 Cdeg3 o— — o Typical « Worst CV3 7 5 3 1 -1 b. V2H/V2L CV3 7 S 3 1 V2L •- — » -1 L c. Fosc C*3 .5

Contextual Info: 2 4 PART NO. REVI5IQN5 CA-XXIDH-XX-XXX LTR ORDERING DESCRIPTION DATE APPROVED 10-01-86 J. MCA. SEE ECO 879 12-17-86 A. J . C 5EE ECO 932 07-I7-B7 I .M . D SEE ECO 2281 DL 02-01-95 A .J . E SEE ECO 2534 PH 05-02-96 A .J . F SEE DO 4082 JRL 7-10-00 G SEE DO 4109

nec 2501 904

Abstract: AN 17821 audio nec 303 j fet nec 7912
Contextual Info: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7dBTYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 /xm recessed gate • Gate Width: Wg = 330 • fim Plastic package ORDERING INFORMATION

SL4 diode

Abstract: SR330 8 bit half adder 74 Z03 Series ZD3,9 CD60 CD61 CD62 DM10900 TUL5014
Contextual Info: 2900 Family/ Bipolar Microprocessor National J ji Semiconductor PRELIMINARY DM10900 8-Bit Parity ALU Slice Features General Description The DM10900 8-Bit M ic ro p ro c e s s o r s lic e is a cascadable device desig ned fo r use in high pe rform ance ce n ­

mc1310P application notes

Abstract: lm1310 Application LM1310 CA1310 SN76115N CA1310E LM1310 fm/CA1310 decoder MC1310 CA1310 decoder LM131
Contextual Info: TV/CATV Circuits CA1310E RC Phase-Lock-Loop Stereo Decoder For FM Multiplex Systems Features: 14-Lead Dual-in-Line Plastic Package H-1517 • Low d isto rtio n [TH D ]: 0.3% typ. m Excellent SCA [sforecasf] rejection: 75 dB typ. m RC oscillator m High audio channel separation:

marking 7T transistor

Contextual Info: TO SHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK232 O TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF TYP. • Low Noise Figure.

3SK166

Abstract: IC 0642 sony ic sony 0642 D6NF sony 0642
Contextual Info: 3SK166 SONY. GaAs N-channel Dual-Gate MES FET Description Package Outline _ U nit: mm 3 S K 1 6 6 is a GaAs N -ch an nel Dual-G ate M E S FET for low noise U H F amplifiers. Low noise and high gain characteristics are accom plished by op tim um

MSM5298

Abstract: LC758
Contextual Info: SANYO SEMICONDUCTOR CORP C o n tin u ed fro m p reced ing p a g e . 32E D • 7cH7D7b 00075^7 2 ■ T~£$~/3 LCD CONTROLLERS, DRIVERS raonolitM cintegratedcircuit \ 1, * Ty p e ■ ; N u m b er Ï] « LA 5 6 4 0 N -Vi & V ’ Packagi P in s & ‘ ’ Package -

Contextual Info: PANASONIC IN DL /E LE K 6 9 3 2 8 52 -CICJ 72 P A NASON IC D E ^ h^BcEASE! DODbMST S I N DL * E L E C T R O N I C 72 C -a»«,*.-.*0 -.-».»6 :4 5 9 . D MN3208 MN3208 2 0 4 8 g ffi;« E n - / -f X BBD 20 4 8 - S t a g e Lo w Voltage Operation, Low N o i s e B B D for Audio Sig na ls

Contextual Info: TM124MBK36B 1 048 576 BY 36-BIT DYNAMIC RAM MODULE S M M S 1 3 7 — JA NUARY 199 This Data Sheet is Applicable to All TM124MBK36BS Symbolized with Revision "B” and Subsequent Revisions as Described on Page 6-103. Common CAS Control for Nine Common Data-In and Data-Out Lines, in Four Blocks

SLA7020M

Contextual Info: Unipolar Driver ICs SLA7020M WITH MOSFETs SLA7021M Ratings \ . Absolute maximum ratings Motor supply Voltage Type No. Control voltage V FET output breakdown voltage (V) (V) Vcc V ds Vs Reference voltage Output current Power dissipation Channel tem perature