TY 4008 Search Results

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

Contextual Info: Product specification 1SS387 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Small Package + +0.1 0.6-0.1 - Low forward voltage :VF 3 = 0.98V(TYP.) Fast Forward Voltage :trr = 1.6ns(TYP.) 0.77max :CT = 0.5pF(TY +0.05 0.1-0.02 0.07max

Contextual Info: Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.

Contextual Info: Product specification ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from TY features low onresistance achievable with 4.5V gate drive.

Contextual Info: Product specification ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.12 ID = 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: Product specification 20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N02F SUMMARY V BR DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching

Contextual Info: Product specification ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.

Contextual Info: Product specification 30V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N03F SUMMARY V BR DSS=30V; RDS(ON)=0.22⍀; ID=1.4A DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching

Contextual Info: Product specification ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-30V; RDS(ON)=0.35⍀; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching

GS 069

Contextual Info: Product specification ZXMP3A13F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -30V; RDS(ON) = 0.21 ID = -1.6A DESCRIPTION This new generation of trench MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

Contextual Info: Product specification ZXMN2A14F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V : RDS(on)=0.06 ; ID= 4.1A DESCRIPTION This new generation of trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

Contextual Info: Product specification ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 2.2A DESCRIPTION This new generation of trench MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

Contextual Info: Product specification ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

MARKING 3B1 SOT-23

Contextual Info: Product specification ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

Contextual Info: Product specification ZXMP3F30FH 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 0.080 @ VGS= -10V -4.0 (V) -30 0.140 @ VGS= -4.5V Description This new generation Trench MOSFET from TY has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance.

4017BP

Abstract: 4013BP 4069BP 4016BP 4066bp hef 4011bp IC NAND 4040BP 4000BP 40106BP 4030BP
Contextual Info: Signetics Integrated Circuits - Loemos HEF 4000 Series LOCIMOS Locally Oxidised CMOS LOCM OS g e n e r a l d e s c r ip t io n LOCMOS is com ple tely pin, fu n c tio n and ty p e num ber com patible w ith th e 4 0 0 0 and 14000 fam ilies. Compared w ith o rd in a ry CMOS, LOCMOS c irc u it

Contextual Info: CD4008B Types ^qq v CM O S 4-Bit Full Adder With Parallel Carry Out H igh-V oltage T y p e s A4 — • 4 sum outputs plus parallel look-ahead carry-output ■ High-speed operation - sum in-to-sum out, 160 ns typ; T h e R C A - C 0 4 0 0 8 B ty p e s c o n s is t o f fo u r

complement of 2N3053

Abstract: 2N3283 npn 40411 2N3773 regulator 40411 2n377 40375 40852 coil 2N3053 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . Ir to 60 A . . . Pr to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0

2N5672

Abstract: 2n5038 complement complement of 2N3053 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N]

40410

Abstract: MAX766 2N6179 40362 40394 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0

2N6354

Abstract: 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180 2n6479
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0

stm 8309

Abstract: m3003 L 0904 8178 bat 63-03 HF 4053 C2899 pa 3029 b MARKING 8042 M3003 16 aw 7199
Contextual Info: A CO M PA N Y M39003/01/02/03/04/06/09 Solid Tantalum C a p a cito rs S o lid -E le ctro ly te T a n t a l e x C a p a c ito rs , M ilitary MIL-C-39003 Q u alified, S ty le s C S R 0 9 , 13, 21, 23, 33, 91 OF SPRAGUE S T Y L E , D OCU M EN T/D ETAIL S P E C

40375

Abstract: 2N6180 2N3055 2n377 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30*

Ci 4008

Abstract: CMOS 4008 Ci 4008 HCF 4008BE 4008 ADDER 4008 pin out diagram 4008 Full Adder 4008B 4008 logic 4008bf
Contextual Info: COS/MOS INTEGRATED CIRCUIT M. a a ä & h cc/h cf 4ea8B 4 -B IT F U L L A D D E R W IT H P A R A L L E L C A R R Y O U TPU T • • 4 SUM OUTPUTS PLUS P A R A L L E L L O O K -A H E R D C A R R Y -O U T P U T HIG H -SPEED O P E R A T IO N -S U M IN -T O -S U M O U T 160 ns TY P. : C A R R Y IN -T O -C A R R Y O UT