TWO-PLANE PROGRAM NAND Search Results

Contextual Info: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History Draft Date Remark 1. Initial issue 2. two-plane page program technical note is modified. p27, p35 3. Figure 17.(p37) is modified.

K9F4G08U0M

Abstract: two-plane program nand
Contextual Info: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History Draft Date Remark 1. Initial issue 2. two-plane page program technical note is modified. p27, p35 3. Figure 17.(p37) is modified.

Contextual Info: 1 Preliminary H27UAG8T2A Series 16 Gbit 2048 M x 8 bit NAND Flash 16 Gb NAND Flash H27UAG8T2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

H27UAG8T2

Contextual Info: APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 Release H27UAG8T2B Series 16Gb 2048M x 8bit NAND Flash 16Gb NAND Flash H27UAG8T2B Rev 1.0 /Aug. 2010 *58b7d520-e522* 1 B26798/177.179.157.212/2010-08-06 17:39 APCPCWM_4828539:WP_0000001WP_000000

C7478

Contextual Info: NAND08GW3F2B 8-Gbit, 4224-byte page, 3 V supply, multiplane architecture, single level cell NAND flash memory Preliminary Data Features • High density single level cell SLC flash memory – 8 Gbits of memory array – Cost-effective solutions for mass storage

intel nand flash

Abstract: 29f16g08 JS29F08G08CANB2 INTEL FLASH MEMORY 29F intel nand intel date code marking NAND Flash 448MB intel 29F JS29F16G08FANB1 29F08G08
Contextual Info: Intel SD74 NAND Flash Memory JS29F04G08AANB1, JS29F08G08CANB2, JS29F16G08FANB1 Datasheet Product Features „ „ „ „ „ „ „ „ „ „ Single-level cell SLC Technology Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes)

NUMONYX DDR

Abstract: NAND16GW3D2B
Contextual Info: NAND16GW3D2B 16-Gbit, 4320-byte page, 3 V supply, multiplane architecture, multilevel cell NAND flash memory Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage applications

NAND16GW3D2A

Abstract: numonyx MLC NAND32GW3D4A
Contextual Info: NANDxxGW3DxA 16- or 32-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – Up to 32 Gbits of memory array – Up to 1 Gbit of spare area – Cost-effective solutions for mass storage

NAND02GR3B2D

Contextual Info: Numonyx NAND SLC large page 41 nm Discrete 2 and 4 Gbit, 2112 Byte/1056 Word page, x8/x16, 1.8 or 3 V, multiplane architecture Features • – Single and multiplane cache program – Cache read – Multiplane block erase Density – 2 Gbit: 2048 blocks ®

NAND Flash

Abstract: F59L2G81A
Contextual Info: ESMT F59L2G81A Flash 2 Gbit 256M x 8 3.3V NAND Flash Memory FEATURES         Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte

K9F4G08U0M

Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
Contextual Info: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

Contextual Info: EN27LN4G08 EN27LN4G08 4 Gigabit 512M x 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase Cycles - Data Retention: 10 Years • Organization

Contextual Info: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Kbits of spare area – Cost-effective solutions for mass storage

Contextual Info: EN27LN2G08 EN27LN2G08 2 Gigabit 256M x 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase Cycles - Data Retention: 10 Years • Organization

Contextual Info: SpecTek Confidential and Proprietary Advance‡‡ 4Gb through 16Gb x8 M40A Features NAND Flash Memory FNNM40A Features Figure 1: 48-Pin TSOP Type 1 • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes)

NI3205

Abstract: NAND04GW3B2
Contextual Info: Numonyx NAND SLC large page 41 nm Discrete 4 Gbit, 2112 Byte/1056 Word page, x8/x16, 1.8 or 3 V, multiplane architecture Features – Cache read – Multiplane block erase • Density – 4 Gbit: 4096 blocks ■ NAND Flash interface – x8 or x16 bus width

SpecTek flash

Contextual Info: SpecTek Confidential and Proprietary Advance‡‡ 4Gb through 16Gb x8 M40A Features NAND Flash Memory FNNM40A Features Figure 1: 48-Pin TSOP Type 1 • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes)

29f16g08

Abstract: intel nand flash JS29F16G08FANB1 intel date code marking nand flash INTEL FLASH MEMORY 29F JS29F08G08 intel nand JS29F04G08AANB1 intel 29F SD74 intel
Contextual Info: Intel SD74 NAND Flash Memory JS29F04G08AANB1, JS29F08G08CANB1, JS29F16G08FANB1 Datasheet Product Features Single-level cell SLC Technology Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes) — Plane size: 2,048 blocks

F59L2G81A

Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h
Contextual Info: ESMT Preliminary F59L2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase

MT29F32G08

Abstract: MT29F8G08MAA MT29F32G08TAA MT29F16G08QAA Micron NAND MT29F32 Micron MT29F8G08 MT29F32G MT29F16G08 MT29F8G08M
Contextual Info: TN-29-25: Improving Performance Using Two-Plane Commands Introduction Technical Note Improving NAND Flash Performance Using Two-Plane Command Enabled Micron Devices MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA, MT29F8G08MAA, MT29F16G08QAA, and MT29F32G08TAA

Contextual Info: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase

NAND08GW3D2A

Contextual Info: NAND08GW3D2A 8-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8 Gbits of memory array – 256 Mbits of spare area – Cost-effective solutions for mass storage

NAND16GW3D2A

Abstract: C5761 2112B
Contextual Info: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage

NAND08GW3F2A

Abstract: transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60
Contextual Info: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage