TWO TRANSISTOR FORWARD Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two MMBT9015 chips in an SMT package. „

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two chips in a SMT package „ EQUIVALENT CIRCUITS

transistor B 560

Abstract: QW-R215-003
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two Chips in a SMT Package „ EQUIVALENT CIRCUITS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two Chips in a SMT Package „ EQUIVALENT CIRCUITS

Contextual Info: Philips Semiconductors Power Bipolar Transistors „ Transistor Safe _Operating Area SOAR TRANSISTOR SAFE OPERATING AREA (SOAR) Average junction temperature There are two main limiting factors which affect the power handling ability of a transistor; the average

NPN Monolithic Transistor Pair

Abstract: Darlington pair IC darlington pair transistor NTE904
Contextual Info: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

Darlington pair IC

Abstract: NTE904 darlington pair transistor NPN Monolithic Transistor Pair
Contextual Info: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

transistor marking N1

Abstract: RT1N141 RT3N11M
Contextual Info: RT3N11M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING RT3N11M is compound transistor built with two Unit：mm RT1N141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

RT1P141

Abstract: RT3P11M
Contextual Info: RT3P11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P11M is compound transistor built with two RT1P141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

Contextual Info: RT3P77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P77M is compound transistor built with two RT1P140 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

Contextual Info: RT3PEEM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3PEEM is compound transistor built with two RT1P234 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

RT3N22M

Abstract: RT1N241 RT1N* MARKING
Contextual Info: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is compound transistor built with two RT1N241 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

RT3P55M

Abstract: RT1P144
Contextual Info: RT3P55M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P55M is compound transistor built with two RT1P144 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

RT3P66M

Contextual Info: PRELIMINARY RT3P66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3P66M is compound transistor built with two RT1P430 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

RT1P441

Abstract: RT3P33M
Contextual Info: PRELIMINARY RT3P33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3P33M is compound transistor built with two RT1P441 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

Contextual Info: Y RT3NFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3NFFM is compound transistor built with two RT1N431 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

2SA1235A

Abstract: 100HZ transistor AMm
Contextual Info: PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3AMMM is a composite transistor built with two Unit：mm 2.1 2SA1235A chips in SC-88 package. 2.0 Each transistor elements are independent.

RT3N66M

Abstract: RT1N43
Contextual Info: PRELIMINARY RT3N66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3N66M is compound transistor built with two RT1N430 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

RT3N77M

Contextual Info: PRELIMINARY RT3N77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3N77M is compound transistor built with two RT1N140 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

2SC3052

Abstract: RT3CLLM
Contextual Info: PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3CLLM is a compound transistor built with two Unit：mm 2.1 2SC3052 chips in SC-88 package. 2.0 Each transistor elements are independent.

RT3PRRM

Contextual Info: PRELIMINARY RT3PRRM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3PRRM is compound transistor built with two RT1P440 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

RT3N33M

Contextual Info: PRELIMINARY RT3N33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3N33M is compound transistor built with two RT1N441 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

RT3Y97M

Abstract: muting
Contextual Info: RT3Y97M Composite Transistor For Muting Application DESCRIPTION OUTLINE DRAWING RT3Y97M is a composite transistor built with RT1P140 and Unit：mm two muting transistor with resistor in SC-88 package. FEATURE ・RT3Y97M is built in RTr1 side RT1P140,and RTr2,RTr3 side

RT3P11M

Abstract: RT1P141
Contextual Info: RT3P11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3P11M is a composite transistor built with two Unit：mm 2.1 RT1P141 in SC-88 package. 2.0 Each transistor elements are independent. Mini package for easy mounting