TWO TRANSISTOR FORWARD Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two MMBT9015 chips in an SMT package. „

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two chips in a SMT package „ EQUIVALENT CIRCUITS

transistor B 560

Abstract: QW-R215-003
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two Chips in a SMT Package „ EQUIVALENT CIRCUITS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two Chips in a SMT Package „ EQUIVALENT CIRCUITS

Contextual Info: Philips Semiconductors Power Bipolar Transistors „ Transistor Safe _Operating Area SOAR TRANSISTOR SAFE OPERATING AREA (SOAR) Average junction temperature There are two main limiting factors which affect the power handling ability of a transistor; the average

NPN Monolithic Transistor Pair

Abstract: Darlington pair IC darlington pair transistor NTE904
Contextual Info: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

Darlington pair IC

Abstract: NTE904 darlington pair transistor NPN Monolithic Transistor Pair
Contextual Info: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

transistor marking N1

Abstract: RT1N141 RT3N11M
Contextual Info: RT3N11M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING RT3N11M is compound transistor built with two Unit：mm RT1N141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

RT1P141

Abstract: RT3P11M
Contextual Info: RT3P11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P11M is compound transistor built with two RT1P141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

RT3P66M

Contextual Info: PRELIMINARY RT3P66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3P66M is compound transistor built with two RT1P430 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

2SC5938

Abstract: RT3C55M
Contextual Info: b RT3C55M Composite Transistor For Muting Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3C55M is compound transistor built with two 2SC5938 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Each transistor elements are independent.

RT1P441

Abstract: RT3P33M
Contextual Info: PRELIMINARY RT3P33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3P33M is compound transistor built with two RT1P441 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

Contextual Info: Y RT3NFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3NFFM is compound transistor built with two RT1N431 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

2SA1235A

Abstract: 100HZ transistor AMm
Contextual Info: PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3AMMM is a composite transistor built with two Unit：mm 2.1 2SA1235A chips in SC-88 package. 2.0 Each transistor elements are independent.

2SC3052

Abstract: RT3CLLM
Contextual Info: PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3CLLM is a compound transistor built with two Unit：mm 2.1 2SC3052 chips in SC-88 package. 2.0 Each transistor elements are independent.

RT3Y97M

Abstract: muting
Contextual Info: RT3Y97M Composite Transistor For Muting Application DESCRIPTION OUTLINE DRAWING RT3Y97M is a composite transistor built with RT1P140 and Unit：mm two muting transistor with resistor in SC-88 package. FEATURE ・RT3Y97M is built in RTr1 side RT1P140,and RTr2,RTr3 side

RT3P11M

Abstract: RT1P141
Contextual Info: RT3P11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3P11M is a composite transistor built with two Unit：mm 2.1 RT1P141 in SC-88 package. 2.0 Each transistor elements are independent. Mini package for easy mounting

RT1N241

Abstract: RT3N22M
Contextual Info: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is a compound transistor built with two 2.1 RT1N241 in SC-88 package. 2.0 Each transistor elements are independent. Mini package for easy mounting

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

2SC3052

Abstract: RT2C00M
Contextual Info: RT2C00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 SC-88 package. 1.25 0.2 RT2C00M is a composite transistor built with two 2SC3052 chips in FEATURE ① 0.65 ⑤ 2.0 Each transistor elements are independent.

2SA1602A

Abstract: RT2A00M
Contextual Info: RT2A00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 SC-88 package. 1.25 0.2 RT2A00M is a composite transistor built with two 2SA1602A chips in FEATURE ⑤ 0.65 ① Each transistor elements are independent.

D217 OPTO

Abstract: opto transistor moc MOCD217 RS481A D217
Contextual Info: , MOTOROLA SEMICONDUCTOR ● TECHNICAL Order this document by MOCD217/D DATA Dual Channel Small Outline Optoisolators MOCQ217 Transistor Output [CTR = 100% Min] These devices consist of two optically coupled to two monolithic mountable, small outline, plastic

UN212X

Abstract: UN2223 UNR212X UNR2223 XN04390
Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

D8050

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)