TWO TRANSISTOR FORWARD Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two MMBT9015 chips in an SMT package. „

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two Chips in a SMT Package „ EQUIVALENT CIRCUITS

NPN Monolithic Transistor Pair

Abstract: Darlington pair IC darlington pair transistor NTE904
Contextual Info: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

2SC3052

Abstract: RT3CLLM
Contextual Info: PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3CLLM is a compound transistor built with two Unit：mm 2.1 2SC3052 chips in SC-88 package. 2.0 Each transistor elements are independent.

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

UN212X

Abstract: UN2223 UNR212X UNR2223 XN04390
Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

D8050

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

E67349

Abstract: TLP330
Contextual Info: TOSHIBA TLP330 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP330 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP330 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse

2N6027

Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two

E67349

Abstract: TLP630
Contextual Info: TOSHIBA TLP630 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS GaAs IRED & PHOTO-TRANSISTOR TLP630 Unit in mm AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode

opto transistor moc

Abstract: MOCD211 H11AA1M MOCD211R2 D211 OPTO 4n33 4n25 H11AA4M MOC3081M 4N35M H11D1M
Contextual Info: Dual Channel Small Outline Optoisolators MOCD211 Transistor Output The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high

Contextual Info: TOSHIBA GaAs IRED & PHOTO-TRANSISTOR TLP630 Programmable Controllers AC/DC-Input Module Telecommunication The Toshiba TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead

D211 OPTO

Abstract: MOCD211 fairchild 1011 dual opto D211 Dual opto coupler IC
Contextual Info: Dual Channel Small Outline Optoisolators MOCD211 Transistor Output The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high

Contextual Info: 7 ^ 1 g M 3 00051*13 57T TRANSISTOR MODULE OCA15QA/QBB150A40/60 UL;E76102 M QCA150A and QBB150A is a dual Darlin­ gton power transistor module with two high speed, high power Darlington transis­ tors. Each transistor has a reverse paral­ leled fast recovery diode.

MOCD211

Abstract: motorola transistor number 18 D211 RS481A
Contextual Info: MOTOROLA Order this document by MOCD211/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD211 Transistor Output [CTR = 20% Min] The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a

opto d213

Abstract: d213 opto optoisolator IC D213 MOCD213 Dual opto coupler IC
Contextual Info: MOCD213 Dual Channel Small Outline Optoisolator MOCD213 Transistor Output This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density

Contextual Info: MOTOROLA Order this document by MOCD211/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD211 Transistor Output [C TR = 20% Min] The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a

opto d213

Abstract: d213 opto D213 MOCD213 RS481A MOCD213 T&R soic8 footprint
Contextual Info: MOTOROLA Order this document by MOCD213/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolator MOCD213 Transistor Output [CTR = 100% Min] This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface

MOCD211

Abstract: D211 RS481A motorola opto coupler
Contextual Info: MOTOROLA Order this document by MOCD211/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD211 Transistor Output [CTR = 20% Min] The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a

11-3C1

Abstract: transistor 9036 tlp290 TLP290-4
Contextual Info: TLP290 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP290 Programmable Controllers AC/DC-Input Module Hybrid ICs Unit: mm TLP290 consist of photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and can operate directly

transistor marking 6c1

Contextual Info: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package BC846PN BC846UPN

e 0123 yb

Contextual Info: MOTOROLA Order this document by MOCD217/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD217 Transistor Output [CTR = 100% Min] These devices consist of two gallium arsenide infrared em itting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface

40841

Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types

CA3096

Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types