TWO TRANSISTOR FORWARD Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two MMBT9015 chips in an SMT package. „

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two chips in a SMT package „ EQUIVALENT CIRCUITS

transistor B 560

Abstract: QW-R215-003
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two Chips in a SMT Package „ EQUIVALENT CIRCUITS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. „ FEATURES * Two Chips in a SMT Package „ EQUIVALENT CIRCUITS

NPN Monolithic Transistor Pair

Abstract: Darlington pair IC darlington pair transistor NTE904
Contextual Info: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

Darlington pair IC

Abstract: NTE904 darlington pair transistor NPN Monolithic Transistor Pair
Contextual Info: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

2SA1235A

Abstract: 100HZ transistor AMm
Contextual Info: PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3AMMM is a composite transistor built with two Unit：mm 2.1 2SA1235A chips in SC-88 package. 2.0 Each transistor elements are independent.

2SC3052

Abstract: RT3CLLM
Contextual Info: PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3CLLM is a compound transistor built with two Unit：mm 2.1 2SC3052 chips in SC-88 package. 2.0 Each transistor elements are independent.

RT3P11M

Abstract: RT1P141
Contextual Info: RT3P11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3P11M is a composite transistor built with two Unit：mm 2.1 RT1P141 in SC-88 package. 2.0 Each transistor elements are independent. Mini package for easy mounting

RT1N241

Abstract: RT3N22M
Contextual Info: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is a compound transistor built with two 2.1 RT1N241 in SC-88 package. 2.0 Each transistor elements are independent. Mini package for easy mounting

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

2SC3052

Abstract: RT2C00M
Contextual Info: RT2C00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 SC-88 package. 1.25 0.2 RT2C00M is a composite transistor built with two 2SC3052 chips in FEATURE ① 0.65 ⑤ 2.0 Each transistor elements are independent.

2SA1602A

Abstract: RT2A00M
Contextual Info: RT2A00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 SC-88 package. 1.25 0.2 RT2A00M is a composite transistor built with two 2SA1602A chips in FEATURE ⑤ 0.65 ① Each transistor elements are independent.

D217 OPTO

Abstract: opto transistor moc MOCD217 RS481A D217
Contextual Info: , MOTOROLA SEMICONDUCTOR ● TECHNICAL Order this document by MOCD217/D DATA Dual Channel Small Outline Optoisolators MOCQ217 Transistor Output [CTR = 100% Min] These devices consist of two optically coupled to two monolithic mountable, small outline, plastic

D8050

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

opto d213

Abstract: d213 opto MOCD213 T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline Optoisolator MOCD213 Transistor Output [CTR > 100% Min] This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, In a surface

E67349

Abstract: TLP330
Contextual Info: TOSHIBA TLP330 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP330 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP330 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse

2N6027

Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two

E67349

Abstract: TLP630
Contextual Info: TOSHIBA TLP630 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS GaAs IRED & PHOTO-TRANSISTOR TLP630 Unit in mm AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode

MOCD213

Contextual Info: MOTOROLA SEMICONDUCTOR o TECHNICAL Order this document by MOCD213/D DATA MOCD213 Dual Channel [CTR = 100% MIN] Small Outline Optoisolator Transistor Outnut This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor

opto transistor moc

Abstract: MOCD211 H11AA1M MOCD211R2 D211 OPTO 4n33 4n25 H11AA4M MOC3081M 4N35M H11D1M
Contextual Info: Dual Channel Small Outline Optoisolators MOCD211 Transistor Output The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high

Contextual Info: TOSHIBA GaAs IRED & PHOTO-TRANSISTOR TLP630 Programmable Controllers AC/DC-Input Module Telecommunication The Toshiba TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead

Contextual Info: EVALUATION KIT AVAILABLE MAX5042/MAX5043 Two-Switch Power ICs with Integrated Power MOSFETs and Hot-Swap Controller General Description The MAX5042/MAX5043 isolated multimode PWM power ICs feature integrated switching power MOSFETs connected in a voltage-clamped, two-transistor, power-circuit

VQE 22 led

Abstract: transistor sec 623 transistor sec 621 MOCD208 transistor D207
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD207 MOCD208 [CTR « 100-200%] Transistor Output [CTR = 40-125%] These devices consist of two gallium arsenide Infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface