TW000 Search Results

Contextual Info: T-1 3/4 5 mm Precision Optical Performance InGaN Bluish-Green LED Lamps Technical Data HP SunPower Series HLMP-CE15-TW000 HLMP-CE16-TW000 HLMP-CE23 HLMP-CE30 HLMP-CE24 HLMP-CE31 Features Description • Smooth, Consistent Spatial Radiation Patterns • High Luminous Output

d592

Abstract: UV-B LED 70MA20 HLMP-AL30-TW000
Contextual Info: HLMP-AL30-TW000 Description These Precision Optical Performance Oval LEDs are specially designed for full color/video and passenger information signs. The oval shaped radiation pattern and high luminous intensity ensure that these devices are excellent for wide field of view outdoor application where a wide

AN-1142

Abstract: HLMP-CE16-TW000 HLMP-CE23 HLMP-CE23-R0000 HLMP-CE23-S0000 HLMP-CE24 HLMP-CE24-R0000 HLMP-CE30 HLMP-CE31 sunpower
Contextual Info: T-1 3/4 5 mm Precision Optical Performance InGaN Bluish-Green LED Lamps Technical Data SunPower Series HLMP-CE15-TW000 HLMP-CE16-TW000 HLMP-CE23 HLMP-CE30 HLMP-CE24 HLMP-CE31 Features Description • Smooth, Consistent Spatial Radiation Patterns • High Luminous Output

Contextual Info: T-1 3/4 5 mm Precision Optical Performance InGaN Bluish-Green LED Lamps Technical Data SunPower Series HLMP-CE15-TW000 HLMP-CE16-TW000 HLMP-CE23 HLMP-CE30 HLMP-CE24 HLMP-CE31 Features Description • Smooth, Consistent Spatial Radiation Patterns • High Luminous Output

PCB 4210

Abstract: 91L22
Contextual Info: Am9122 256 x 4 Static RAM ZZL6UIV DISTINCTIVE CHARACTERISTICS • • • High-performance replacement for 93422/93L422 Fast access times — as low as 25 ns Low-power dissipation - Low power: 440 mW Commercial 495 mW (Military) • Single 5-volt power supply — ±10% tolerance both

27LS00

Abstract: 27LS01 27LS00 RAM Am27LS
Contextual Info: Am27LS00/01 Series 256-Bit Low-Power Schottky Bipolar RAM > 3 DISTINCTIVE CHARACTERISTICS • • High Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature • Output preconditioned during write to eliminate the write

27LS02

Abstract: AM27LS03 AM27LS03-30/BEA
Contextual Info: ADV M I C R O {MEflORY} &*\ D e 05 5 7 5 2 0 00BS553 7 0257528 ADV MICRO (MEMORY 890 25553 D T-46-23-08 Am 27LS02/Am 27LS03 H 64-Bit Low-Power Inverting-Output Bipolar RAM > 3 DISTINCTIVE CHARACTERISTICS Fully decoded 16 word x 4-bit low-power Schottky

27LS00

Abstract: AM27S00
Contextual Info: NOV 2 ì 1991J P ag e 0001 n /2 3 /8 8 1 4 :3 4 :2 9 Tx: A M 2 7 L S 0 0 T E D • Ft: A M D F M T Am27LS00 Series 256-Bit Low-Power Schottky Bipolar RAM > 3 to DISTINCTIVE CHARACTERISTICS • • High spead Internal ECL circuitry for optimum spee d /p o w e r perfor­

Sunpower hlmp-EG08-VY000

Abstract: UX000 HLMP-DG15 HLMP-EG15-PS000
Contextual Info: WSI H EWLETT PACKARD mi/ÍM T-13/4 5 mm Precision Optical Performance AlInGaP LED Lamps Technical Data Features • Well Defined Spatial Radiation Patterns • Viewing Angles: 6°, 15°, 23°, 30° • High Luminous Output • Colors: 590 mu Amber 605 rnn Orange

LM 4800

Abstract: HLMP-xLxx-xxK00 HLMP-DH25 HLMP-ED18 HLMP-DD25 HLMP-DD27
Contextual Info: WS IH EW LETT mi/ÍM PACKARD Precision Optical Performance AlInGaP II LED Lamps Technical Data Features • Well Defined Spatial Radiation Patterns • Viewing Angles: 15°, 23°, 30° • High Luminous Output • Colors: 592 im Amber 617 nm Reddish-Orange

CD4024

Abstract: diagrams VW ecu 100474 LS000262
Contextual Info: Am100474 1 0 2 4 x 4 IMOX ECL Bipolar RAM Am100474 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • Fast access time 10 ns — improves system cycle speeds. Fully com patible with 100K series ECL logic — no board changes required. Enhanced output voltage level compensation providing

Contextual Info: Am100474 1024 x 4 IMOX ECL Bipolar RAM Am100474 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • Fast access time 10 ns — improves system cycle speeds. Fully compatible with 100K series ECL logic — no board changes required. Enhanced output voltage level compensation providing

Contextual Info: Am10480 16,384x1 IMOX ECL Bipolar RAM A m 10480 PRELIMINARY DISTINCTIVE CHARACTERISTICS • Enhanced output voltage level compensation providing improvement in V o l and V oh stability over supply and temperature ranges. Emitter follower outputs — easy wire-ORing

74ls189 ram

Abstract: precon po
Contextual Info: " I — Jk ^ ’g T g ^ 1— mk ^ Page 0001 0 1 /1 6 /8 9 11:16:37 Tx: AM27LS03 TED - Ft: A V O PMT woniNMMSflnncMiMCa Am27LS03 64-Bit Low-Power Inverting-Output Bipolar RAM > 3 ro DISTINCTIVE CHARACTERISTICS Fully decoded 16 word x 4-bit low-power Schottky

KS000010

Contextual Info: Ami00480 16,384x1 IMOX ECL Bipolar RAM _PRELIMINARY_ • • • Fast access time 15 ns — improves system cycle speeds. Enhanced output voltage level compensation providing 6X (improvement in) V o l and V oh stability over supply and temperature ranges.

404944

Contextual Info: ISO 9002 Registered PRELIMINARY I W CONOOUK MvC Swiiot(.CAf;i;i MSISAM27LS00 IEU 404-944-4270 WO 404-944-4272 256-Bit m Cwnpatibte CMOS RAM DISTINCTIVE CHARACTERSTICS • • • High Speed Internal CMOS Circuitry for Optmium Performance over temperature and voltage

AM27S03

Abstract: A35CS AM27S02 20D3 74S189 74S289 fmuml
Contextual Info: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S< rv ie> fc Inc. Am 27S02/Am 27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CH A R A C T E R IST IC S Fully 16 word x 4-bit low-power Schottky RAM S Ultra-Fast Version; Address access time 25 ns

KS000010

Contextual Info: Am100415 1 0 2 4 x 1 IM O X II E C L B ip o la r R A M DISTINCTIVE CHARACTERISTICS Fast access time 8 ns typ. — improves system cycle speeds Enhanced output voltage level compensation providing 6 X (improvement In) V o l and V oh stability over supply

am93422a

Contextual Info: Am93L412/93L422 256 x 4-Bit Low-Power TTL Bipolar IMOX RAM • • • Available with three-state outputs or with open-collector outputs Power dissipation decreases with increasing tempera­ ture High-speed Internal ECL circuitry for optimum speed/power perfor­

Contextual Info: Am3101/3101-1 64-Bit Write Transparent, Inverting Output, Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Standard version; Address access time 50 ns Low power: Ice typically 75 mA Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature

AM27S06A

Abstract: 27S07A 27s07 Am27S06/27S07
Contextual Info: Am27S06/27S07 64-Bit Noninverting-Output Bipolar RAM • Available with three-state outputs Am27S07/07A or with open collector outputs (Am27S06/06A) Electrically tested and optically inspected die for the assemblers of hybrid products • GENERAL DESCRIPTION

27lS03

Abstract: 74ls189 ram 74LS189 74LS289
Contextual Info: A m 27LS 02/27L S 03 64-Bit Low-Power Inverting-Output Bipolar RAM • • Fully decoded 16 word x 4-bit low-power Schottky RAMs Low Power Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature • • • Output preconditioned during write to eliminate write

74S189

Abstract: 74S289 AM27S02
Contextual Info: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S< rv ie> fc Inc. Am 27S02/Am 27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CHARACTERISTICS Fully 16 w ord x 4-b it low -pow er S chottky RAMS Ultra-Fast Version; Address access time 25 ns

AM31L01

Abstract: AM31L01PC
Contextual Info: Am 31L01/31L01A 64-Bit Low Power Write Transparent, Inverting Output, Bipolar RAM • • • Standard version: Address access time 50 ns Low power: Ic c typically 75 mA Internal ECL circuitry lor optimum speed/power perfor­ mance over voltage and temperature