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Contextual Info: MOTOROLA Order this document by TV32N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV32N 25E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate |
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mtv32n25e/dtv32n | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TV32N 25E TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r D3PAK for S u rfa c e M ount TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate The D3pAK package has Ihe capability of housing the largest chip |
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0e-05 | |
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Contextual Info: MOTOROLA Order this document by TV32N20E/D SEMICONDUCTOR TECHNICAL DATA Advance Information M TV32N 20E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM N-Channel Enhancement-Mode Silicon Gate |
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mtv32n20e/dtv32n | |
hall marking code A04
Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
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2phx14226-31hall marking code a04m143206evkdifferences uc3842a uc3842b+7 |