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Contextual Info: MOTOROLA O rder this docum ent by M TV10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV10N 100E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TM OS POWER FET 10 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate

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Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

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Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”