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buz31 Abstract: BUZ31 H TRANSISTOR SE 135 T-39 Contextual Info: PowerMOS transistor N AMER PH IL IP S/ DIS CR ETE BUZ31 ObE D ^ 53=131 0 01 4 4 4 4 7 • May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	buz31 tu220ab 0d14ms0 buz31 h +2transistor se 135 t-39	PDF

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buz31

Abstract: BUZ31 H TRANSISTOR SE 135 T-39
Contextual Info: PowerMOS transistor N AMER PH IL IP S/ DIS CR ETE BUZ31 ObE D ^ 53=131 0 01 4 4 4 4 7 • May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

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buz31 tu220ab 0d14ms0 buz31 h +2

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