TSSOP MOSFET Search Results

Contextual Info: Tem ic SÌ6426DQ Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS(V) rDS(on) (Q) 0.035 @ VGs = 4.5 V 0.04 @ VGS = 2.5 V 20 I d (A) ±5.4 ±4.9 D Q TSSOP-8 Ò s* *Source Pins 2, 3. 6, and 7 must be tied common. TSSOP-8 Top View N-Channel MOSFET

Si6562CDQ

Abstract: Si6562DQ-T1-GE3
Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si6562CDQ vs. Si6562DQ Description: Package: Pin Out: N- and P-Channel, 20-V D-S MOSFET TSSOP-8 Identical Part Number Replacements: Si6562CDQ-T1-GE3 replaces Si6562DQ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: CMOS IC For Switching Power Supply Control FA3630V FA3630V • Description FA3630V is a DC-DC converter controller. This IC can directly drive a Nch/Pch-MOSFET. This IC is suitable to reduce converter size because it has many functions in a small package TSSOP.

Contextual Info: DCA-48 TSSOP 12.5mm ´ 8.1mm TAS5760MD www.ti.com SLOS741 – MAY 2013 General Purpose I2S Input Class D Amplifier with DirectPath Headphone / Line Driver Check for Samples: TAS5760MD FEATURES 1 • • DVDD Internal Voltage Supplies DRVDD AVDD_REG APPLICATIONS

51597A

Abstract: DIP14 footprint MCP2120 MCP42010 MCP42050 SOIC-14 MOSFET R3D SOT23 R2P MARK R2C SOT-23 r2e sot 23
Contextual Info: 14-Pin SOIC/DIP/TSSOP Evaluation Board User’s Guide 2006 Microchip Technology Inc. DS51597A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: AP9924GO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance S2 D ▼ Capable of 2.5V gate drive G2 S2 G1 ▼ RoHS Compliant TSSOP-8 D S1 BVDSS 20V RDS ON 20mΩ ID S1 Description 6.8A D Advanced Power MOSFETs from APEC provide the

IRF7750

Contextual Info: PD - 93848A IRF7750 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS = -20V RDS(on) = 0.030Ω TSSOP-8 Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

TSSOP28P

Abstract: 32-DQ
Contextual Info: Temic SÌ6332DQ Semiconductors Triple P-Channel 30-V D-S Rated MOSFET Product Summary VDS(V) 30 I d (A) ±4.5 ±3.4 rDS(on) (^ ) 0.040 @ VGs = -10 V 0.070 @ VGS = -4.5 V p o '« 6 TSSOP-28 ne "Source Pins 2, 3, 25, 26, and 27 must be tied common. Source Pins 7, 8, 20, 21, and

SI6925AD

Abstract: pc based electronic notice board SI6925ADQ
Contextual Info: Si6925ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.045 at VGS = 4.5 V 3.9 0.055 at VGS = 3.0 V 3.5 0.065 at VGS = 2.5 V 3.0 • Halogen-free RoHS COMPLIANT D2 D1 TSSOP-8 D1 1 S1 2 S1 3 G1

Contextual Info: SÌ6965DQ Vishay Siliconix P-Channel 2.5-V G-S Battery Switch New Product Ros{on) (f ì ) I d (AJ 0.035 @ VGs = -4 -5 V ±5 .0 0.060 @ VGS = -2 .5 V ±3.9 vos m -2 0 TSSOP-8 Top View P-Channel MOSFET P-Channel MOSFET • m ■ ■ ■ ■ ■ ■ 1 SYMBOL

Contextual Info: Tem ic SÌ6968DQ Semicondutinrs Dual N-Ch. 2.5-V G-S Rated MOSFET Common Drain Product Summary V d s (V) 20 I d (A) ±6.5 ±5.5 rDS(on) (Ö ) 0.022 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V us* TSSOP-8 3- O-Top View it Ô Si Ô S2 N-Channel MOSFET N-Channel MOSFET

Contextual Info: CMOS IC For Switching Power Supply Control FA3629AV FA3629AV • Dimensions, mm TSSOP-16 9 16 8 1 5.2 0.2±0.05 0~8˚ • Low input voltage: 2.5V to 6.5V • 40V CDMOS Process: Built-in 0.3Ω Nch-Power MOSFET ch1, open drain • 3-channels PWM Control: 2 boost circuits(ch1, ch2), 1 inverting circuit (ch3)

Contextual Info: Si6953DQ Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 20 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "1.9 0.32 @ VGS = –4.5 V "1.3 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 D 8 Si6953DQ 7 3 6 4 5 D2 S2 S2 G2 G1 G2 Top View D1 D2 P-Channel MOSFET

Contextual Info: Tem ic SÌ6426DQ Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) rDS(on) (^ ) I d (A) 20 0.035 @ VGs = 4.5 V 0.04 @ VGS = 2.5 V ±5.4 ±4.9 D O TSSOP-8 Top View *Source Pins 2, 3, 6, and 7 must be tied common. Ô s* N-Channel MOSFET

Si6965DQ

Contextual Info: Si6965DQ Vishay Siliconix P-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "5.0 0.060 @ VGS = –2.5 V "3.9 S1 S2 TSSOP-8 8 D 7 S2 3 6 S2 4 5 G2 D 1 S1 2 S1 G1 D Si6965DQ G1 G2 Top View D D P-Channel MOSFET

Si6463DQ

Contextual Info: Si6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.020 @ VGS = –4.5 V "6.5 0.030 @ VGS = –2.5 V "5.2 S* TSSOP-8 D 1 S 2 S 3 6 S G 4 5 D D Si6463DQ 8 D 7 S G * Source Pins 2, 3, 6 and 7 must be tied common.

AN295040

Abstract: A3940 A3940KLP A3940KLP-T A3940KLW A3940KLW-T JESD51-7 current limit diode
Contextual Info: Data Sheet 29319.100i 3940 FULL-BRIDGE POWER MOSFET CONTROLLER — For Automotive Applications 1 28 2 27 3 26 4 25 5 24 6 23 7 22 8 21 9 20 10 19 11 18 12 17 13 16 14 15 A3940KLP TSSOP with exposed thermal pad 1 28 2 27 3 26 4 25 5 24 6 23 7 22 8 21 9 20

S-99422

Abstract: Si6866DQ 58AR
Contextual Info: Si6866DQ New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "5.8 0.040 @ VGS = 2.5 V "5.0 D D TSSOP-8 8 D 7 D 3 6 D 4 5 D S1 1 G1 2 S2 G2 D Si6866DQ G1 G2 Top View S1 S2 N-Channel MOSFET

S-54704

Contextual Info: Si6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V "7.8 0.021 @ VGS = 2.5 V "6.3 D TSSOP-8 D 1 S 2 8 D 7 S S G 3 6 S 4 5 D D Si6466DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View

Si6968ADQ

Contextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET

Contextual Info: Tem ic SÌ6926DQ Se mi c ond uc t or s Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) 20 fDSion) (&) I d (A) 0.035 @ VGS = 4.5 V ±4.0 0.040 @ VGS = 3.0 V ±3.7 0.045 @ VGS = 2.5 V ±3.5 iJS-V « ä<e4 Dl O 2 d o TSSOP-8 G2 Gi Top View N-Channel M OSFET

Contextual Info: SÌ6925DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET v » (V) H d SIOH) (Û ) A •d (A) 0.05 @ V GS = 4.5 V 0 .0 6 V q S = 3.0 V 0.08 @ V e s = 2.5 V Di Q D2 Q TSSOP-8 <J2 o -i Top View Ô s2 N -Channel MOSFET PARAMETER SYMBOL N-Channel MO SFET

Contextual Info: Tem ic SÌ6802DQ S e m i c o n d u c t o r s N-Channel, Reduced Qg, Fast Switching MOSFET Product Summary V d s V rDS(on) ( ^ ) Id (A) 0.075 @ VGS = 4.5 V ±3.3 0.110 @ VGs = 3.0 V ±2.7 20 TSSOP-8 , It O - — ‘ |- * S o u rc e P in s 2 , 3, 6 , a n d 7

Contextual Info: Tem ic SÌ6433DQ S e m i co n d u c t or s P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) 12 rDS(on) (^ ) I d (A) 0.06 @ Vos = -4.5 V ±4.0 0.09 @ Vos = -2.5 V ±3.0 s* Q TSSOP-8 ni *Source Pins 2, 3, 6 and 7 m ust be tied common. Top View o