TSSA3U45 Search Results
TSSA3U45 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSSA3U45H |
|
3A, 45V, TRENCH SCHOTTKY | Original | 365.28KB | 5 | ||
| TSSA3U45 M2G |
|
Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 45V 3A DO214AC | Original | 257.11KB | |||
| TSSA3U45 R3G |
|
Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 45V 3A DO214AC | Original | 257.11KB |
TSSA3U45 Price and Stock
Taiwan Semiconductor TSSA3U45Schottky Diodes & Rectifiers 3A, 45V, Trench Schottky |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
TSSA3U45 | 14,856 |
|
Buy Now | |||||||
| TSSA3U45 | 13,826 |
|
Buy Now | ||||||||
Taiwan Semiconductor TSSA3U45HSchottky Diodes & Rectifiers 3A, 45V, Trench Schottky |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
|
TSSA3U45H |
|
Get Quote | ||||||||
| TSSA3U45H |
|
Get Quote | |||||||||
TSSA3U45 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability |
Original |
TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1311013 | |
|
Contextual Info: TSSA3U45 thru TSSA3U60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
Original |
TSSA3U45 TSSA3U60 J-STD-020 2011/65/EU 2002/96/EC DO-214AC D1408048 | |
|
Contextual Info: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability |
Original |
TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011 | |
marking b14 diodeContextual Info: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability |
Original |
TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011 marking b14 diode | |
|
Contextual Info: TSSA3U45 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
Original |
TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011 | |
|
Contextual Info: TSSA3U45 thru TSSA3U60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
Original |
TSSA3U45 TSSA3U60 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1405046 | |
|
Contextual Info: TSSA3U45 thru TSSA3U60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
Original |
TSSA3U45 TSSA3U60 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1405046 |