TSOPII 44 Search Results

Contextual Info: ESMT M24L416256SA Revision History Revision 1.0 04 Jul. 2007 -Original Revision 1.1 (10 Sep. 2007) - Modify Vcc (max) =3.3V to 3.6V Revision 1.2 (27 Feb. 2008) - Add 44-pin TSOPII package - Add Avoid timing Revision 1.3 (24 Mar. 2008) - Add I-grade for TSOPII package

TSOPII 44

Abstract: TSOP-II 44
Contextual Info: TSOp p '4 00~ °-80 Unit • TSOPII 44-P-400-0.80 44 Unit : mm 23 À 0.5±0.1

HY5118160

Contextual Info: •HYUNDAI H Y M 536123 X-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536123 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ or 44/50 pin TSOPII and one HY514403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit

Contextual Info: ‘ HYUNDAI HYM536410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board.

5B33

Abstract: MJ002 HYM536410 HY5117400A HYM53641OAMG
Contextual Info: -HYUNDAI HYM536410A M-Series 4M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY5141 OOAin 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board.

UG-95

Contextual Info: “H Y U N D A I HYM5V36123A X-Sgnqs , U n U M I 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5V36123A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 42/42 pin SOJ or 44/50 pin TSOPII and one HY51V4403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy

Contextual Info: “HYUNDAI U HYM5V36223A X-S ries 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5V36223A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY51V18160B in 42/42 pin SOJ or 42/50 pin TSOPII and two HY51V4403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy

Contextual Info: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin

HY5117400A

Abstract: HY514100A HYM536810AM HYM536810AMG
Contextual Info: HYM536810A M-Series 8Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§Þ decoupling are mounted for each DRAM. The

HY5118160

Contextual Info: HYUNDAI HYM536223 X-Series 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536223 is a 2M x 36-bit Fast page m ode CMOS DRAM m odule consisting o f fo u r HY5118160 in 42/42 pin SOJ o r 42/50 pin TSOPII and tw o HY514403B in 24/26 pin SOJ o r TSOPII on a 72 pin glass-epoxy printed circuit

HYM536410AMG

Abstract: hym536410am HY5117400A HY514100A
Contextual Info: HYM536410A M-Series 4Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM536410AM / ASLM / ATM /

HYM536410AMG

Contextual Info: “H Y U N D A I H Y M 5 3 6 4 1 0 A M - S e r ie s 4Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy

Contextual Info: HM62W16255HI Series Ordering Information Type No. Access time Package HM62W16255HJPI-15 15 ns 400-mil 44-pin plastic SOJ CP-44D HM62W16255HTTI-15 15 ns 400-mil 44-pin plastic TSOPII (TTP-44DE) Pin Arrangement HM62W16255HJPI Series A0 A1 A2 A3 A4 CS I/O1

Contextual Info: SRAM PRELIMINARY AS5LC2M8 2M x 8 HIGH-SPEED CMOS STATIC RAM PIN CONFIGURATIONS 44-pin TSOPII DGC & DGCR FEATURES • High-speed access time: 10, 15 & 20ns • Available in Mil-Temp, Enhanced & Industrial Ranges • High-performance, low-power CMOS process

Contextual Info: MOSEL VITELIC V436664S24VBTG-75PC 3.3 VOLT 64M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 67,108,864 x 64 bit Oganization SDRAM Modules ■ Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages

pc133 sdram 512mb ECC unbuffered

Abstract: V437464Q24V V437464Q24VXTG-10PC V437464Q24VXTG-75 V437464Q24VXTG-75PC
Contextual Info: MOSEL VITELIC V437464Q24V 3.3 VOLT 64M x 72 HIGH PERFORMANCE UNBUFFERED ECC SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered ECC 67,108,864 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 64M x 4 SDRAM in TSOPII-54 Packages

V436516R04VXTG-10PCL

Abstract: V436516R04VXTG-75L V436516R04VXTG-75PCL
Contextual Info: MOSEL VITELIC V436516R04V L 3.3 VOLT 16M x 64 LOW PROFILE UNBUFFERED SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered16,777,216 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages

V436632S04VTG-10PC

Contextual Info: PRELIMINARY V436632S04VTG-10PC 3.3 VOLT 32M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE MOSEL VITELIC Features Description • 168 Pin Unbuffered 33,554,432 x 64 bit Oganization SDRAM Modules ■ Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Revision 1.1 (19 Mar. 2008) - Add BGA package - Modify the waveform of Power up & Initialization Sequence - Modify the θ value of TSOPII package dimension

PC200

Contextual Info: V826416S04SATG 2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE MOSEL VITELIC PRELIMINARY Features Description • 184 Pin Unbuffered 16,777,216 x 64 bit Organization SDRAM Modules ■ Utilizes High Performance 16M x 8 SDRAM in TSOPII-66 Packages

Contextual Info: MOSEL VITELIC V827464K24S 64M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE PRELIMINARY Features Description • 184 Pin Unbuffered 67,108,864 x 72 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in TSOPII-66 Packages

Contextual Info: PRELIMINARY V436664S04VTG-10PC 3.3 VOLT 64M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE MOSEL VITELIC Features Description • 168 Pin Unbuffered 67,108,864 x 64 bit Oganization SDRAM Modules ■ Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: MOSEL VITELIC PRELIMINARY V436664S04VTG-75 3.3 VOLT 64M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE Features Description • 168 Pin Unbuffered 67,108,864 x 64 bit Oganization SDRAM Modules ■ Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages

sdram pcb layout gerber

Abstract: V437464E24V V437464E24VXTG-10PC V437464E24VXTG-75 V437464E24VXTG-75PC
Contextual Info: MOSEL VITELIC V437464E24V 3.3 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED SDRAM ECC MODULE PRELIMINARY Features Description • 168 Pin Registered ECC 67,108,864 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages